摘要： There is generally a need to pattern Ga2O3 when fabricating devices such as UV solar blind photodetectors, various types of transistors, as well as sensors [1, 2]. The patterning is carried out by etching the semiconductor, using dielectric or photoresist masks to protect the active areas. There are two basic classes of etch processes, those carried out in the liquid phase (known as wet etching) and those performed in the gas phase (called dry etching, especially when a plasma is used to provide the reactive species for etching) [3]. Etch processes may be classified by their rate, selectivity, uniformity, directionality (isotropy or anisotropy), surface quality, and reproducibility [3]. All etching processes involve three basic events: (i) movement of the etching species to the surface to be etched, (ii) chemical reaction to form a compound that is soluble in the surrounding medium, and (iii) movement of the by-products away from the etched region, allowing fresh etchant to reach the surface. Both (i) and (iii) usually are referred to as diffusion, although convection may be present. The slowest of these processes primarily determines the etch rate, which may be diffusion or chemical-reaction limited.