- 标题
- 摘要
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- 实验方案
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Enhanced sunlight photocatalytic performance of ZnO/ZnS binary heterostructure sheets
摘要： The 2D binary heterostructured ZnO/ZnS sheets were prepared via a hydro-thermal synthesis method. The X-ray diffraction results illustrated that ZnS was successfully formed on ZnO sheets. The images captured by field emission scanning electron microscopy showed the granular structure with fine particles on the surface, which increases the contact area between dye solution and catalysts. The EDS spectrum suggested that the surface of the heterojunction was almost entirely coated with ZnS. The UV-vis diffuse reflectance spectra clarified that the ultraviolet and visible absorption of heterostructure were both enhanced. These results all contribute to the efficient methyl orange degradation with the degradation rate of 83 % in 4 h under direct sunlight.
关键词： Binary heterostructure,Sunglight,Photocatalytic activity,Semiconductor
更新于2025-09-23 15:23:52
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[IEEE 2018 21st Saudi Computer Society National Computer Conference (NCC) - Riyadh, Saudi Arabia (2018.4.25-2018.4.26)] 2018 21st Saudi Computer Society National Computer Conference (NCC) - Millimeter Wave Switching in Radio over Fiber Networks using Semiconductor Optical Amplifier (SOA)
摘要： 5G wireless communication systems promise efficient spectrum utilization, advanced modulation and access techniques, and high data rate. To obtain these requirements, millimeter wave (MMW) signals and subsystems are the most suitable to be used. The Modules and devices, proposed for these networks, are intended to use the efficient capabilities of photonic technologies. In this paper, a photonics-based millimeter wave switch, for orthogonal frequency division multiplexing (OFDM) signals, is proposed by exploiting the nonlinear effects in semiconductor optical amplifiers (SOAs). This includes four wave mixing (FWM), self-phase modulation (SPM) and cross-gain modulation (XGM). A 10 Gbps/16QAM-OFDM signal carried over 30 GHz MMW carrier is considered for signal switching. Moreover, we studied the up- and down- wavelength conversion schemes, in terms of probe and pump signal’s power. Furthermore, we investigate the effects of SOA’s injection current and wavelength spacing between the two injected beams that enable optical single sideband (OSSB) generation and switching. Simulation results show possibility of transmitting and switching OFDM signal with 1×10-3 and 13 % rms symbol error rate (SER) and error vector magnitude (EVM), at -22 dBm received power. The simulation is carried out using Virtual Photonic Integrated (VPI) software.
关键词： optical single side band (OSSB),orthogonal frequency division multiplexing (OFDM),millimeter waves (MMW),semiconductor optical amplifier (SOA),wavelength conversion,5G
更新于2025-09-23 15:23:52
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To the Theory of the Polarized Radiation Absorption in a Semiconductor (001) Quantum Well
摘要： The paper considers absorption of linearly polarized radiation in a semiconductor size-quantized well related to optical transitions both between the branches of light and heavy holes and between the size-quantized subbands. Main features of the light absorption in an infinitely deep symmetric well are elucidated. These features are characterized by intraband absorption of light and associated with the direct optical transitions of holes between the subbands of the semiconductor valence band formed due to the size quantization.
关键词： optical transition,semiconductor,size quantization,light absorption coefficient,polarized light,holes
更新于2025-09-23 15:23:52
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Study of the extrinsic properties of Copper doped Cadmium Sulfide thin film by hydrothermal assisted CBD method
摘要： Cadmium sulphide (CdS) and Cu doped CdS film were deposited onto commercially available FTO glass substrate by the hydrothermal assisted chemical bath deposition (HACBD). The effect of doping on the properties of CdS films were investigated. Optical, morphological, structural and photoluminescence properties of deposited films were investigated using UV-Vis spectroscopy, SEM, FTIR, X-ray diffraction and photoluminescence spectroscopy (PL). Lower value of the bandgap energy was observed for the Cu doped CdS films as compared to those of the undoped CdS films. XRD patterns reveal a cubic and hexagonal crystal structure phase with (1 1 1) and (0 0 2) as the preferential orientation having an average crystallite size of 18nm. SEM images reveal a change in the morphology of CdS and Cu-CdS thin films from spherical to disc like structures. PL spectra showed strong emission peak in visible region for both doped and undoped films. The associated of chemical bonds were investigated using FTIR spectroscopy.
关键词： Semiconductor,Doping,CdS,PL,SEM,Bandgap
更新于2025-09-23 15:23:52
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Feasibility of 4H-SiC p-i-n Diode for Sensitive Temperature Measurements between 20.5 K and 802 K
摘要： For the first time, we report on the performances of 4H-SiC pin-diode temperature sensors for operating temperatures between 20.5 K and 802 K. In this huge temperature range three ranges of performance were identified with the limit temperatures at 78.2 K and 176.3 K. In each of these ranges a different dominant current transport mechanism is shown and in the manuscript a detailed analysis and discussion is reported. The sensor performances were extracted from VD-T characteristics at different fixed ID values. In particular, at ID=1 μA and in the temperature range between 78.2 K and 802 K, we found a sensor sensitivity of 2.3 mV/K up to 3.4 mV/K with a rms temperature error, eT, of less than 4.2 K and the sensor shows an excellent linearity – quantified by the coefficient of determination R2 higher than 0.9993. For even lower temperatures (below 78.2 K), low measurement currents like 10 nA are required leading to a sensitivity of 5.8 mV/K, but a lower linearity (R2=0.9095) and a rms temperature error of 9.7 K which makes the sensor only partially usable in the temperature range between 20.5 K and 78.2 K. Finally, the sensor performances are compared to other state-of-the-art solutions.
关键词： Semiconductor device modelling,Cryogenic temperatures,Temperature sensors,4H-Silicon Carbide device,High temperatures,Semiconductor p-i-n diodes
更新于2025-09-23 15:22:29
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[IEEE 2018 2nd International Conference on Data Science and Business Analytics (ICDSBA) - Changsha, China (2018.9.21-2018.9.23)] 2018 2nd International Conference on Data Science and Business Analytics (ICDSBA) - Design and Simulation of AlGaAs/InGaAs/GaAs Based Pseudomorphic HEMT Using SILVACO ATLASTM
摘要： In this paper, we have designed and observed the characteristics of a photonic crystal (PC) based optoelectronic device with a specific structure. The device is fabricated using standard semiconductor processes and characterized for its optical and electrical properties. The results show promising performance for applications in data communication.
关键词： data communication,optoelectronic device,photonic crystal,semiconductor process
更新于2025-09-23 15:22:29
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[IEEE 2018 IEEE CPMT Symposium Japan (ICSJ) - Kyoto, Japan (2018.11.19-2018.11.21)] 2018 IEEE CPMT Symposium Japan (ICSJ) - Study on corundum-structured p-type iridium oxide thin films and band alignment at iridium oxide /gallium oxide hetero-junction
摘要： Corundum-structured iridium oxide, showing p-type conductivity, is a powerful candidate material for forming high-quality pn hetero-junctions with gallium oxide. We have succeeded in fabricating corundum-structured iridium oxide thin films on sapphire substrates. According to the optical transmittance measurement, the optical bandgap of iridium oxide was found to be approximately 3.0 eV. Furthermore, the band alignment at the iridium oxide /gallium oxide interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-Ⅱ) with the valence and conduction band offsets of 3.3 eV and 1.0 eV, respectively.
关键词： p-type oxide semiconductor,band alignment,gallium oxide
更新于2025-09-23 15:22:29
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Backside-illuminated CMOS Photodiodes with Embedded Polysilicon Grating Reflectors
摘要： In this study, we investigated the feasibility of replacing metal mirrors with polysilicon gratings to serve as compact optical back reflectors in thin backside-illuminated CMOS photodiodes (BSI CPDs). The unique reflective properties of polysilicon grating reflectors can be implemented within a very small area (12 μm2); i.e., between the contact vias of BSI CPDs. The proposed scheme achieves high optical reflectivity for TE-polarized light at wavelengths exceeding 100 nm, while improving responsivity at near-infrared wavelengths. The resulting BSI CPDs were shown to enhance photocurrent by 1.45x in a polarization-dependent manner (ITE/ITM =1.148) at a wavelength of 980 nm.
关键词： complementary metal oxide semiconductor (CMOS),backside-illuminated photodiode,polysilicon grating reflector
更新于2025-09-23 15:22:29
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Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays
摘要： Oxide semiconductors are highly attractive for fabrication of large-area thin-film electronics because of their high electrical performance, low process temperature, high uniformity, and ease of industrial manufacturing. n-type oxide semiconductors, such as InGaZnO, are highly developed and have already been commercialized for backplane drivers of flat-panel displays. To date, developing CMOS technology is still an urgent issue in order to build low-power electronic circuits based on oxide semiconductors. In this paper, various CMOS circuits, including inverters, NAND, NOR, XOR, d-latches, full adders, and 7-, 11-, 21-, and 51-stage ring oscillators (ROs), are fabricated based on sputtered p-type tin monoxide and n-type InGaZnO. The inverters show rail-to-rail output voltage behavior, low average static power consumption of 8.84 nW, high noise margin level up to ~40% supply voltage, high yield of 98%, and high uniformity with negligible standard deviation. The NAND, NOR, XOR, d-latches, and full adders show desirably ideal input–output characteristics. The performances of ROs indicate small stage delay of ~1 μs, extremely high uniformity and high yield which are essential for large-area thin-film electronics. This paper may inspire constructions of low power, large area, large scale, and high-performance transparent/flexible CMOS circuits fully based on oxide semiconductors for applications beyond flat-panel displays.
关键词： CMOS,oxide semiconductor,thin-film transistor (TFT),IC
更新于2025-09-23 15:22:29
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[IEEE 2018 International Conference on Applied Engineering (ICAE) - Batam, Indonesia (2018.10.3-2018.10.4)] 2018 International Conference on Applied Engineering (ICAE) - Epoxy Adhesive as Die Attach Material in Semiconductor Packaging: A Review
摘要： Semiconductor packaging generally includes many steps such as wafer mounting, wafer dicing, die attach or die bonding, wire bonding, molding, plating, marking, and trim form. Die attach process is one of the crucial process in electronics packaging or semiconductor packaging. So, the die attaches material is an important part of this process. Die attach materials are commonly divided into some categories. The categories cover high and low-temperature application. Some kinds of die attach materials are alternative resins, epoxy adhesive, soft soldering, die attach solders and silver-glass material. In this study focuses to review epoxy adhesive material in die attach process.
关键词： epoxy adhesive material,die attach,semiconductor packaging,material characterization
更新于2025-09-23 15:22:29