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990 nm High-power High-beam-quality DFB Laser With Narrow Linewidth Controlled By Gain-coupled Effect
摘要： High-power single-longitudinal-mode regrowth-free gain-coupled distributed feedback laser diode based on ridge waveguide with periodic current injection is achieved at 990 nm. Our device is fabricated only by standard i-line lithography with micron-scale precision, obtains an excellent performance at high injection current. A continuous-wave power of over 0.681 W is achieved at 3 A. The maximum continuous-wave power at single-longitudinal-mode operation is up to 0.303 W at 1.4 A. Narrow linewidth emission has been reached with a 3 dB spectrum width less than 1.41 pm. The high side mode suppression ratio is over 35 dB. The lateral far field divergence angle is only 15.05 °, the beam quality factor M 2 is 1.245, achieving a laterally near-diffraction-limit emission. It is more beneficial for single mode fiber coupling as pumping sources and other applications which require high beam quality at high power with easy fabrication technique.
关键词： narrow linewidth,Single-longitudinal mode,Gain-coupled DFB,Semiconductor lasers
更新于2025-11-28 14:24:03
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Physical origin of higher-order soliton fission in nanophotonic semiconductor waveguides
摘要： Supercontinuum generation in Kerr media has become a staple of nonlinear optics. It has been celebrated for advancing the understanding of soliton propagation as well as its many applications in a broad range of fields. Coherent spectral broadening of laser light is now commonly performed in laboratories and used in commercial “white light” sources. The prospect of miniaturizing the technology is currently driving experiments in different integrated platforms such as semiconductor on insulator waveguides. Central to the spectral broadening is the concept of higher-order soliton fission. While widely accepted in silica fibers, the dynamics of soliton decay in semiconductor waveguides is yet poorly understood. In particular, the role of nonlinear loss and free carriers, absent in silica, remains an open question. Here, through experiments and simulations, we show that nonlinear loss is the dominant perturbation in wire waveguides, while free-carrier dispersion is dominant in photonic crystal waveguides.
关键词： nonlinear optics,Supercontinuum generation,free-carrier dispersion,soliton fission,semiconductor waveguides
更新于2025-11-28 14:24:03
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High-power single-longitudinal-mode double-tapered gain-coupled distributed feedback semiconductor lasers based on periodic anodes defined by i-line lithography
摘要： In this paper, we demonstrate a regrowth-free double-tapered gain-coupled distributed feedback semiconductor laser. It is designed based on periodic surface current injection to reach a high-power and single-longitudinal mode. A continuous-wave output power of over 1.2 W/facet is achieved at 4 A. High single-longitudinal-mode output power reaches up to 0.9 W/facet at 3 A at each uncoated facet. The side mode suppression ratio is nearly 30 dB at 980 nm. The 3 dB spectral width is less than 2.7 pm. The lateral far field divergence angle is only 14.5 °, the beam quality factor M2 is 1.7, achieving a near-diffraction-limit emission. Our device, produced by standard i-line lithography, enhances the output power while obtaining the pleasurable spectral and spatial properties. It has great potential in widespread commercial applications such as high efficiency pumping sources for its low-cost, easy fabrication technique and excellent performance.
关键词： Double-tapered,Distributed feedback lasers,Gain-coupled,Semiconductor lasers
更新于2025-11-28 14:24:03
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Narrow linewidth DBR laser based on high order Bragg grating defined by i-line lithography
摘要： In order to obtain narrow linewidth semiconductor laser around 1564 nm, we design a distributed Bragg reflector (DBR) laser with high-order Bragg gratings (HOBGs) using butterfly encapsulation. The DBR laser is fabricated only by i-line lithography technology with grating period of 4.84 μm, groove width of 1.5 μm and grating length of 72 μm on a strip width of 4 μm. The 1mm-long devices achieved an output power of 9.9 mW and a side mode suppression ratio (SMSR) more than 30 dB without facet coating at an injection current of 80 mA. The lasers showed ultra-narrow Lorentz linewidth of 70 KHz. This paper provides a simple method for large-scale production of narrow linewidth semiconductor lasers.
关键词： narrow linewidth spectrum,Semiconductor laser,high-order grating,distributed Bragg reflector laser
更新于2025-11-28 14:23:57
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Stable injection locking with slotted Fabry–Perot lasers at 2 <i>μ</i> m
摘要： Injection locking has many applications in telecommunications systems, such as narrowing linewidths, increasing bandwidth and improving filtering. Beyond telecommunications, injection locking is widely used in remote sensing. This is of particular interest for applications in the 2 μm region, where gases such as carbon dioxide, water vapour and methane have identifiable absorption features. In this paper, we demonstrate stable injection locking with slotted Fabry–Perot lasers in the 2 μm wavelength region. Injection locking was observed in both the optical domain and power spectrum; with key features recorded such as injection ‘pulling’, side-mode suppression and the characteristic quiet region in the electrical domain denoting single-frequency emission and stable locking. The effect of varying the injection ratio was investigated, with a decreased injection ratio corresponding to a reduction in the locking bandwidth. Finally, the lasers were shown to remain injection locked, with no thermal drift, for over 24 h, indicating their suitability for implementation in a real-world telecommunications system.
关键词： injection-locked lasers,semiconductor lasers,optical communications,optical sensing and sensors
更新于2025-11-28 14:23:57
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Analysis of optical injection on red and blue laser diodes for high bit-rate visible light communication
摘要： In this work, self-injection and external-injection in ～450 nm InGaN/GaN blue and ～650 nm InGaP/AlGaInP red diode lasers are investigated. A distinct locking characteristic is observed in the self-injection case with small 19 cm cavity length, demonstrating enhanced ～2.34 and ～2.07 GHz 3-dB bandwidths, corresponding to a factor of ～1.4 and ～1.1 improvement, and reduced ～60 and ～80 pm spectral linewidths, for the blue and the red lasers, respectively. Moreover, this short external cavity self-injection locked system exhibited superior performance by a factor of 1.1–1.3 compared to the long cavity (26 cm) configuration. Conversely, the external optical injection exhibited weak locking signature with improved linewidths by a factor of ～1.6–2.8 and reaching as small as ～70 and ～87 pm for the blue laser, respectively, while almost doubling in the peak powers. Later, on–off keying modulation technique based data transmission rates of up to 3.5 and 4.5 Gb/s are demonstrated on free-running blue and red laser diodes, respectively, employing an in-house laser diode mount based system. Moreover, owing to the bandwidth limitation of the optically injected systems, successful transmission of up to 2 Gb/s is demonstrated with better performance compared to the respective free-running cases, in particular, the external-optically injected system demonstrated more than double improvement in the bit-error-rate.
关键词： Visible light communication,Semiconductor laser diodes,External optical injection,Self-injection locking
更新于2025-11-28 14:23:57
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Narrow-Strip 670 nm Gain-Coupled Distributed Feedback Laser Based on Periodic Anodes Fabricated by I-Line Lithography
摘要： A narrow-strip single-longitudinal-mode gain-coupled distributed feedback semi-conductor laser with a central wavelength of approximately 670 nm is demonstrated. We fabricate a novel micro-scale regrowth-free gain-coupled grating with an island-like shape without nanoscale gratings by i-line lithography only. The maximum output power from the ?ber of the device with butter?y package is 48.1 mW at 100 mA and its slope ef?ciency is 0.79 W/A. The laser can be continuously tuned from 670.750 to 670.784 nm with a side-mode suppression ratio of over 40 dB, covering the absorptive peak of lithium atoms. Our easily fabricated devices have great potential as light sources in many applications such as lithium atom detectors.
关键词： continuous tunability,gain-coupled,distributed-feedback,Semiconductor laser
更新于2025-11-28 14:23:57
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Effect of incorporation of sulphur on the structural, morphological and optical studies of CdSe thin films deposited by solution processed spin coating technique
摘要： Ternary compound semiconductor CdSexS1-x (x = 1, 0.8, 0.6, 0.4, 0.2 and 0) thin films were prepared on glass substrates by using simple solution processed spin coating technique. Cadmium acetate, sodium selenosulfate and thiourea were used as source materials for Cd2+, Se2? and S2? ions, while triethanolamine was used as a capping agent. The 25% concentred NH4OH solution was used as a complex reagent and also used to adjust the pH of the final solution ~ 11. The deposition conditions (rotation speed 2000 rpm for 30 s and substrate dried in the air at 120 °C for 2 min) were remain same for all the samples. The as-deposited thin films on glass substrate were annealed at 350 °C for 30 min. The X-ray diffraction pattern shows that all the samples were polycrystalline in the nature with hexagonal structure. The most of prepared thin films were highly textured along (002) plane and peak position for plane (002) is shifted with change in composition ‘x’. The average crystallite size in CdSexS1-x thin films were found between 62.6 nm to 93.4 nm. Scanning electron microscopy images showed uniform deposition morphology with spherical shaped grains distributed over entire glass substrate. Samples CdSe0.8S0.2 and CdSe0.6S0.4 thin films indicated interesting morphological features with the combination of spherical shaped nanoparticles and interconnected nanofibers which form hierarchical flowerlike micro-structure. Energy dispersive X-Ray studies confirmed that thin films were having approximately same stoichiometry of atomic ratio of elements Cd, Se and S as present in volumetric ratio of the reactants in chemical solution. Fourier transform infrared studies confirmed the formation of the Cd(Se,S) bonding in materials. The optical band gap of CdSexS1-x thin films were found as direct band gap in the range of 1.82 eV to 2.32 eV. As the incorporation of sulphur element increases, the band gap of CdSexS1-x thin film also increases. The CdSexS1-x thin films can be used as absorption layer in solar photovoltaic cell which is due to wide and fine tenability of the energy band gap.
关键词： Nanofibers,Spin coating,Absorption layer,cadmium sulfide,Cadmium selenide,Hierarchical flowerlike microstructure,Ternary compound semiconductor
更新于2025-11-21 11:18:25
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Enhanced Charge Separation in g-C3N4 – BiOI Heterostructures for Visible Light Driven Photoelectrochemical Water Splitting
摘要： Heterojunctions of the low bandgap semiconductor bismuth oxyiodide (BiOI) with bulk multilayered graphitic carbon nitride (g-C3N4) and few layered graphitic carbon nitride sheets (g-C3N4-S) are synthesized and investigated as an active photoanode material for sunlight driven water splitting. HR-TEM and elemental mapping reveals formation of a unique heterostructure between BiOI platelets and the carbon nitride (g-C3N4 and g-C3N4-S) network that consisted of dendritic BiOI nanoplates surrounded by g-C3N4 sheets. The presence of BiOI in g-C3N4-S/BiOI and g-C3N4-S/BiOI nanocomposites extends the visible light absorption profile from 500 nm up to 650 nm. Due to excellent charge separation in g-C3N4/BiOI and g-C3N4-S/BiOI, evident from quenching of the carbon nitride photoluminescence (PL) and a decrease in the PL lifetime, a significant increase in photoelectrochemical performance is observed for both types of g-C3N4-BiOI heterojunctions. In comparison to heterojunctions of bulk g-C3N4 with BiOI, the nancomposite consisting of few layered sheets of g-C3N4 and BiOI exhibits higher photocurrent density due to lower recombination in few layered sheets. A synergistic trap passivation and charge separation is found to occur in the g-C3N4-S/BiOI nanocomposite heterostructure which results in a higher photocurrent and a lower charge transfer resistance.
关键词： visible light driven photocatalysis,earth abundant semiconductor heterostructures,Graphenic semiconductors,photoelectrochemistry
更新于2025-11-21 11:01:37
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Highly sensitive and selective room-temperature NO2 gas-sensing characteristics of SnOX-based p-type thin-film transistor
摘要： The high-performance p-type metal-oxide-semiconductor (MOS)-based gas sensor is an important subject of research in the field of gas-sensing technology. In this work, we demonstrated a p-type MOS-based thin-film transistor (TFT) nitrogen dioxide (NO2) gas sensor that used tin oxide (SnOX) for both the channel and sensing layers. The crystalline status, surface morphology, and atomic-bonding configuration of the thin-film were examined using X-ray diffraction, field emission-scanning electron microscopy, and X-ray photoelectron spectroscopy. The results indicated that the deposited thin-film was mainly composed of polycrystalline SnO with a tetragonal structure. The fabricated p-type SnOX TFT showed a maximum response value of 19.4-10 ppm NO2 at room temperature (RT, 25 °C) when operated in the subthreshold region, which was significantly higher than that of 2.8–10 ppm NO2 obtained from a p-type SnOX thin-film chemiresistor at RT. In addition, the SnOX TFT gas sensor showed significantly higher sensitivity to NO2 gas than to other target gases such as NH3, H2S, CO2, and CO at RT. To the best of our knowledge, this is the first study to a p-type MOS-based field-effect transistor-type gas sensor. Our experimental results demonstrate that the p-type SnOX TFT is a promising gas sensor that can operate at RT with high sensitivity and selectivity to NO2 gas.
关键词： SnO,Thin-film transistor,NO2 gas sensing,SnOX,P-type metal oxide semiconductor
更新于2025-11-21 11:01:37