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Enhanced Charge Separation in g-C3N4 – BiOI Heterostructures for Visible Light Driven Photoelectrochemical Water Splitting
摘要： Heterojunctions of the low bandgap semiconductor bismuth oxyiodide (BiOI) with bulk multilayered graphitic carbon nitride (g-C3N4) and few layered graphitic carbon nitride sheets (g-C3N4-S) are synthesized and investigated as an active photoanode material for sunlight driven water splitting. HR-TEM and elemental mapping reveals formation of a unique heterostructure between BiOI platelets and the carbon nitride (g-C3N4 and g-C3N4-S) network that consisted of dendritic BiOI nanoplates surrounded by g-C3N4 sheets. The presence of BiOI in g-C3N4-S/BiOI and g-C3N4-S/BiOI nanocomposites extends the visible light absorption profile from 500 nm up to 650 nm. Due to excellent charge separation in g-C3N4/BiOI and g-C3N4-S/BiOI, evident from quenching of the carbon nitride photoluminescence (PL) and a decrease in the PL lifetime, a significant increase in photoelectrochemical performance is observed for both types of g-C3N4-BiOI heterojunctions. In comparison to heterojunctions of bulk g-C3N4 with BiOI, the nancomposite consisting of few layered sheets of g-C3N4 and BiOI exhibits higher photocurrent density due to lower recombination in few layered sheets. A synergistic trap passivation and charge separation is found to occur in the g-C3N4-S/BiOI nanocomposite heterostructure which results in a higher photocurrent and a lower charge transfer resistance.
关键词： visible light driven photocatalysis,earth abundant semiconductor heterostructures,Graphenic semiconductors,photoelectrochemistry
更新于2025-11-21 11:01:37
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Split-off states in tunnel-coupled semiconductor heterostructures for ultrafast modulation of spin and optical polarization
摘要： We present a theoretical analysis of the split-off states emerging due to a tunnel coupling between a remote bound state and a semiconductor quantum well (QW). The on-site Coulomb repulsion and the spin splitting of the bound state have been considered. The split-off states emerge in the band gap of the QW and reveal themselves as two solitary peaks in the photoluminescence (PL) from the QW. The peaks have opposite circular polarization and their spectral position strongly depends on the tunnel coupling strength. We suggest a mechanism of ultrafast PL polarization switching by means of electrical modulation of the tunnel coupling by an external gate. The obtained results open a new possibility for the spin and optical polarization control in nanoscale systems.
关键词： split-off states,photoluminescence,optical polarization,semiconductor heterostructures,tunnel coupling,spin polarization
更新于2025-09-23 15:21:01
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Polarization and charge carrier density coupling in epitaxial PbZr <sub/>0.2</sub> Ti <sub/>0.8</sub> O <sub/>3</sub> /ZnO heterostructures
摘要： The integration of ferroelectric materials with semiconductor heterostructures can greatly enhance the functionality of electronic devices, provided the ferroelectric material retains a significant part of its switchable polarization. This work reports polarization switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures grown on c-cut sapphire single-crystal substrates. The electrical measurements of PbZr0.2Ti0.8O3/ZnO ferroelectric/semiconductor capacitors reveal an unexpected difference between a counterclockwise ferroelectric hysteresis loop and a clockwise C-V loop. A non-linear hysteretic behavior of the capacitance is observed in the voltage range that is at least 3 times narrower than the range of ferroelectric polarization switching voltages. This difference can be explained by charge injection effects at the interface between ferroelectrics and semiconductors. The interaction between electric polarization and the electronic structure of the heterojunction leads to capacitance and charge carrier concentrations that are switchable by polarization of the ferroelectric layer. These findings are important for both fundamental and applied research of switchable and highly tunable ferroelectric/semiconductor heterostructures.
关键词： ferroelectric materials,polarization switching,charge injection effects,capacitance,semiconductor heterostructures
更新于2025-09-23 15:21:01
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Fabrication of ZnSe/InP Heterojunctions on Flat and Shaped Surfaces of InP Laser Crystals
摘要： We have studied the growth of zinc selenide layers on flat and shaped indium phosphide surfaces. The growth rate of zinc selenide has been shown to depend on substrate orientation. It has been shown that the present results can be useful in designing mesa stripe structures for quantum electronic instruments. We have fabricated mesa stripe laser diodes operating on the absorption band of methane and suitable for producing fiber-optic signal transmission systems.
关键词： methane,semiconductor heterostructures,zinc selenide,laser diodes
更新于2025-09-19 17:13:59
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[IEEE 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Daejeon, Korea (South) (2019.7.28-2019.8.1)] 2019 International Conference on Optical MEMS and Nanophotonics (OMN) - Hybrid Dielectric Metasurfaces: From Strong Light-Matter Interaction to Extreme Nonlinearities
摘要： We experimentally demonstrate strong coupling between Mie modes of dielectric resonators in a metasurface and intersubband transitions in semiconductor quantum wells that are embedded inside the resonator. The ability to achieve such light-matter coupling creates the possibility to realize ultrathin nonlinear optical devices that are free from complex phase matching requirements and have very high nonlinear conversion efficiencies.
关键词： Rabi splitting,Intersubband transitions,Nonlinear optics,Semiconductor heterostructures,Metasurface
更新于2025-09-16 10:30:52
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A Lattice-mismatched PbTe/ZnTe Heterostructure with High-speed Mid-infrared Photoresponses
摘要： In this work, a novel heterostructure consisting of di?erent lattice structures with zincblende ZnTe and rock-salt PbTe is proposed. The PbTe/ZnTe heterostructures are grown by molecular beam epitaxy. Type-I band alignment at the PbTe/ZnTe heterointerface is revealed by X-ray photoelectron spectroscopy. The interface of the heterostructure exhibits exotic electrical properties. The novel heterostructure is then implemented to develop high-performance mid-infrared photodetectors which demonstrate pronounced responsivity, swift response speed and high detectivity. The new photodetectors utilize the lateral photovoltaic e?ect which facilitates the understanding of the novel PbTe/ZnTe heterostructures.
关键词： mid-infrared detectors,fast photoresponse,lead telluride,lateral photovoltaic e?ect,semiconductor heterostructures
更新于2025-09-12 10:27:22
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Optically oriented attachment of nanoscale metal-semiconductor heterostructures in organic solvents via photonic nanosoldering
摘要： As devices approach the single-nanoparticle scale, the rational assembly of nanomaterial heterojunctions remains a persistent challenge. While optical traps can manipulate objects in three dimensions, to date, nanoscale materials have been trapped primarily in aqueous solvents or vacuum. Here, we demonstrate the use of optical traps to manipulate, align, and assemble metal-seeded nanowire building blocks in a range of organic solvents. Anisotropic radiation pressure generates an optical torque that orients each nanowire, and subsequent trapping of aligned nanowires enables deterministic fabrication of arbitrarily long heterostructures of periodically repeating bismuth-nanocrystal/germanium-nanowire junctions. Heat transport calculations, back-focal-plane interferometry, and optical images reveal that the bismuth nanocrystal melts during trapping, facilitating tip-to-tail “nanosoldering” of the germanium nanowires. These bismuth-semiconductor interfaces may be useful for quantum computing or thermoelectric applications. In addition, the ability to trap nanostructures in oxygen- and water-free organic media broadly expands the library of materials available for optical manipulation and single-particle spectroscopy.
关键词： bismuth-nanocrystal/germanium-nanowire junctions,organic solvents,optical traps,photonic nanosoldering,nanoscale metal-semiconductor heterostructures
更新于2025-09-11 14:15:04
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Preparation of Indium Phosphide Substrates for Epilayer Growth
摘要： We have carried out an integrated study of technological steps in the preparation of indium phosphide substrates for the epitaxial growth of heterostructures. We have investigated the surface morphology and condition of indium phosphide in (100)-oriented substrates and tested various chemical etchants for final chemical surface processing. Our results demonstrate that an optimal substrate preparation process is two-step chemical–mechanical polishing on both sides using zeolite slurries, with chemical polishing in a mixture of bromine and isopropanol as the final step.
关键词： epitaxy,indium phosphide,semiconductor heterostructures,etching
更新于2025-09-10 09:29:36
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Modified qHAADF method for atomic column-by-column compositional quantification of semiconductor heterostructures
摘要： The qHAADF method allows the quanti?cation of the composition at atomic column resolution in semiconductor materials by comparing the HAADF-STEM intensities between a region of interest to a region of the material of known composition. However, the application of this qHAADF approach requires both regions to be differentiable and included in the same micrograph at close proximity. This limits the application of this approach to certain materials and magni?cations where this requirement is ful?lled. In this work, we extend the qHAADF method to analyses where the reference region is imaged in a separate micrograph. The validity of this modi?ed method is proved by comparison to the original qHAADF approach using HAADF-STEM simulated images of the semiconductor heterostructure InSb/InAs. Additionally, the methods are applied successfully to experimental images both of a simple InSb/InAs interface and of a complex InSb/GaSb heterostructure, justifying the signi?cance of the modi?ed method over the original method.
关键词： compositional quanti?cation,qHAADF method,HAADF-STEM,semiconductor heterostructures,atomic column resolution
更新于2025-09-10 09:29:36
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Detectors of Circularly Polarized Radiation Based on Semiconductor Heterostructures with a CoPt Schottky Barrier
摘要： In this paper, we showed the possibility of practical realization of circularly polarized radiation detectors based on a planar photoresistor using the effect of magnetocircular dichroism in the CoPt layer, as well as based on structures using the spin filtration by the CoPt layer of photogenerated spin-polarized charge carriers. The spin filtration process is established to allow increasing the detection efficiency of up to 1.3%.
关键词： semiconductor heterostructures,spin filtration,magnetocircular dichroism,circularly polarized radiation detectors,CoPt layer
更新于2025-09-10 09:29:36