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Determination of the series resistance of a solar cell through its maximum power point
摘要： A simple analytical approach has been developed to determine the series resistance, Rs, of a solar cell. The method adopted here depends only on the knowledge of the open-circuit voltage, Voc, and the current and voltage at the maximum power point, Isc and Vmp respectively. This approach, based on a knowledge of these operating output parameters of the cell, provides a theoretical framework for an existing computer simulated approach which has been widely used in industries.
关键词： series resistance,short-circuit current,five-parameter model,light generated current,solar cell,shunt resistance
更新于2025-09-23 15:19:57
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Temperature dependence of potential-induced degraded p-type mono-crystalline silicon photovoltaic cell characteristics
摘要： In this paper, the temperature dependence of the characteristic parameters for a p-type mono-crystalline silicon photovoltaic cell before and after a potential-induced degradation (PID) stress, is measured and compared. It is demonstrated that a 9 h PID stress causes both a drastic decrease in the value of shunt resistance by ～35 times and a decrease in the open-circuit voltage, Voc by ～34%. Consequently the maximum power density, Pmax is decreased by ～62%. The temperature coefficient (TC) of Pmax increases from ?0.459 to ?0.330 caused by a 0 to 3 h PID stress and then decreases to ?0.471%/°C caused by a 3 to 9 h PID stress. Before PID stress, the TC of Pmax was determined mainly by the TC of Voc. However, after PID stress, the TC of Pmax was determined both by the TCs of Voc as well as by the fill factor. ? 2019 The Japan Society of Applied Physics
关键词： maximum power density,photovoltaic cell,temperature coefficient,open-circuit voltage,potential-induced degradation,shunt resistance,temperature dependence
更新于2025-09-19 17:13:59
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Solar Cells Based on Cu(In, Ga)Se2 Thin-Film Layers
摘要： This paper presents the results of experimental studies of spectral, dark current–voltage and light load characteristics of the selenide–copper–gallium–indium (Cu(In, Ga)Se2) solar cell. Тhe main fundamental parameters of the photoactive semiconductor layer Cu(In, Ga)Se2, such as the band gap, the resistivity of the layer, the equilibrium majority–carrier concentration, the lifetime and the product μ nτn of nonequilibrium minority carriers from the spectral, photoelectric and dark current–voltage characteristics are determined. Based on an analysis of the light-load current–voltage characteristics at various solar radiation powers (50–1000 W/m2), the main parameters of the p–n junction were determined, as well as the nonideality factor and the magnitude of the reverse diode saturation current; a photogeneration mechanism was established in the studied solar radiation range, which had the character of a diffusion mechanism, where carrier recombination in the photoactive layer did not have a significant effect. We found that in conditions of real solar lighting (Рrad = 50–1000 W/m2), the output parameters of the solar cell – short-circuit current, open circuit voltage, the maximum output power increases with Рrad. The fill factor (FF) of the light-current–voltage characteristics has a maximum at Рrad ≈ 200 W/m2, and an efficiency has a maximum value at Рrad ≈ 600 W/m2. The observed dependences of FF and efficiency are explained by the dependence of the series (Rser) and shunt (Rsh) resistance of a solar cell on Prad. To maintain the efficiency of a solar cell based on thin-film layers Cu(In, Ga)Se2, equally high in conditions of increased radiation, as well as in conditions of low solar radiation, it is necessary that Rser decreases and Rsh does not change with Prad.
关键词： photoactive thin film layer,series resistance,solar cell,Cu(In, Ga)Se2,fill factor,short circuit current,solar radiation power,light current–voltage characteristics,efficiency,open circuit voltage,shunt resistance
更新于2025-09-16 10:30:52
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Study of the static characteristic I-V and the electrical parameters corresponding to the shunt resistance Rsh and series resistance Rs per unit area of a solar cell with grain size
摘要： This paper presents a new technique based on the junction recombination velocity (Sf: junction recombination velocity) at the grain size for the evaluation of the series and shunt resistances. The study of the response of the solar cell and the parameters of recombination in grain size, which are the object of the investigation, is related to the study of the static characteristic I-V and electrical parameters Rs and Rsh under a magnetic field. This study has allowed us to address some of the theoretical aspects of the field solar cell in order to draw a conclusion and some perspectives. Based on the results obtained for the photocurrent density and the photovoltage, we will study the I-V characteristic of the solar cell to then be able to propose a model for the determination of the shunt resistance Rsh and the series resistance Rs. Series resistance investigations, including numerical simulations and field data tests, are conducted to examine the energetic behavior of the PV modules for efficiency. Experimental results show that the proposed direct resistance-estimation method allows the PV modules to achieve their maximum power and efficiency under various operation conditions.
关键词： Magnetic field,Solar cell,Series resistance,Shunt resistance,Grain size,Junction Recombination Velocity
更新于2025-09-12 10:27:22
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Light Detection in Open‐Circuit Voltage Mode of Organic Photodetectors
摘要： Organic photodetectors (OPDs) are promising candidates for next-generation light sensors as they combine unique material properties with high-level performance in converting photons into electrical signals. However, low-level light detection with OPD is often limited by device dark current. Here, the open-circuit voltage (Voc) regime of OPDs is shown to be efficient for detecting low light signals (<100 μW cm?2). It is established that the light-dependence of Voc exhibits two distinct regimes as function of irradiance: linear and logarithmic. Whereas the observed logarithmic regime is well understood in organic photovoltaic cells (OPVs), it is shown experimentally and theoretically that the linear regime is due to the non-infinite shunt resistance of the OPD device. Overall, OPDs composed of rubrene and fullerene show photovoltage light sensitivity across nine orders of magnitude with a detection limit as low as 400 pW cm?2. A photovoltage responsivity of 1.75 V m2 W?1 demonstrates highly efficient performance without the necessity to supress high dark current. This approach opens up new possibilities for resolving low light signals and provides simplified design rules for OPDs.
关键词： photovoltage,open-circuit voltage,organic photodetectors,shunt resistance
更新于2025-09-12 10:27:22
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Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon
摘要： The light load current-voltage characteristics of a solar photovoltaic module based on amorphous hydrogenated silicon have been studied at different temperatures under conditions of natural solar illumination (Рrad = 870 ± 10 W/m2). It has been found that the temperature dependence of the photocurrent has two slopes due to a change in the generation–recombination mechanism. The increase in the value of the short-circuit current with increasing temperature of the photovoltaic module is explained by a rise in the drift lengths of minority charge carriers due to an increase in the lifetime of minority carriers. In this case, the quasi Fermi level shifts to the conduction band, and the concentration of recombination centers decreases due to recharging of defective levels (D0 → D–). The decrease in the value of the open-circuit voltage with increasing temperature is explained by the exponential increase in the reverse saturation current and decrease in the band gap of the semiconductor. It has been found that the fill factor (FF) of the current–voltage characteristics decreases with increasing temperature, most likely due to a decrease in the shunt resistance (Rsh), which connects parallel to the p–n junction, consists of parasitic resistances, and leads to an increase in leakage currents. The temperature coefficient of the maximum output power has a positive value in the range of 320–332 K, i.e., increases with temperature. It has been revealed that the values of shunt and series resistance decrease with increasing temperature. A large loss of power output (up to 19%) has been observed on the series resistance of the solar photovoltaic module in the temperature range of 320–332 K. With increasing temperature, the loss of generated power on the shunt resistance grows sublinearly. The efficiency of the solar photovoltaic module decreases from 7.95 to 7.65% and has a coefficient of temperature dependence of efficiency, which decreases from ≈ –0.029%/K to ≈ –0.046%/K.
关键词： shunt resistance,series resistance,efficiency,temperature,open-circuit voltage,fill factor,solar photovoltaic module,amorphous hydrogenated silicon,short-circuit current
更新于2025-09-11 14:15:04
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Elucidating the effect of shunt losses on the performance of mesoporous perovskite solar cells
摘要： Mesoporous perovskite solar cells (MPSCs) suffer from various types of charge carrier losses, where shunt losses usually dominate. Herein, we perform a systematic study to investigate the impact of such losses on the photovoltaic performance of methylammonium lead iodide (MAPbI3)-based MPSCs. The shunt losses in the MPSCs are attributed to the leakage current and the non-geminated recombination losses. We also demonstrate that these losses can be reduced by the incorporation of appropriate thickness of compact titanium oxide (c-TiO2) interlayer between FTO and mesoporous TiO2 (m-TiO2). As a result, MPSCs exhibit higher open-circuit voltage (VOC) of 1.05 V, short-circuit current density (JSC) of 23.27 mA cm?2, and the power conversion efficiency (PCE) of 17.69% under one-sun illumination conditions. The improved device performance was attributed to (i) the efficient blocking of holes, (ii) the decrease of leakage current, and (iii) the suppression of the non-geminated recombination losses in the cells. The effect of the c-TiO2 layer thickness on the series resistance (RS), shunt resistance (RSh), and the non-geminated recombination were also discussed in detail.
关键词： Non-geminated recombination losses,Series and shunt resistance,Electron transport layer,Leakage current,Perovskite solar cell
更新于2025-09-11 14:15:04