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Process for fabricating microactuator membranes of piezoelectric inkjet print head using multi-step deep reactive ion etching process
摘要： As part of an effort to develop piezoelectric inkjet print head (PIPH), a process for fabricating its Si-cups and actuator membranes of multi-layered structures was investigated. The manufacture of this device was enabled by the use of deep reactive ion etching (DRIE). Based on that, multi-step DRIE process was proposed to etch the multi-layered actuator membranes on silicon on insulator wafers. Due to the appropriate parameters of the etching process, undesirable effects, such as Si grasses, notching effect of Si-cups and the bowing formation on the sidewalls, were also avoided. The way to eliminate the over-etching of SiO2 membranes by controlling the appropriate platen power and process duration simultaneously was also presented. High quality PIPH actuator membranes were ?nally obtained, making great contributes to the successful inkjet test.
关键词： multi-layered actuator membranes,deep reactive ion etching,piezoelectric inkjet print head,silicon on insulator wafers,over-etching
更新于2025-09-23 15:21:21
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Low-frequency spectroscopy for quantum multilevel systems
摘要： A periodically driven quantum system with avoided level crossing experiences both nonadiabatic transitions and wave-function phase changes. These result in coherent interference fringes in the system’s occupation probabilities. For qubits, with repelling energy levels, such interference, named after Landau-Zener-Stückelberg-Majorana, displays arc-shaped resonance lines. In the case of a multilevel system with an avoided level crossing of the two lower levels, we demonstrate that the shape of the resonances can change from convex arcs to concave heart-shaped and harp-shaped resonance lines. Indeed, the whole energy spectrum determines the shape of such resonance fringes and this also provides insight into the slow-frequency system spectroscopy. As a particular example, we consider this for valley-orbit silicon quantum dots, which are important for the emerging field of valleytronics.
关键词： valley-orbit silicon quantum dots,valleytronics,low-frequency spectroscopy,quantum multilevel systems,Landau-Zener-Stückelberg-Majorana interference
更新于2025-09-23 15:21:21
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Vibrational electron energy loss spectroscopy in truncated dielectric slabs
摘要： Specially designed instrumentation for electron energy loss spectroscopy (EELS) in a scanning transmission electron microscope makes it possible to probe very low-loss excitations in matter with a focused electron beam. Here we study the nanoscale interaction of fast electrons with optical phonon modes in silica. In particular, we analyze the spatial dependence of EEL spectra in two geometrical arrangements: a free-standing truncated slab of silica and a slab with a junction between silica and silicon. In both cases, we identify different loss channels, involving polaritonic and nonpolaritonic contributions to the total electron energy loss, and we obtain the corresponding energy-filtered maps. Furthermore, we present a comparison of the theoretical simulations for a silica-silicon junction with experimental results, and we discuss the spatial resolution attainable from the energy-filtered map considering optical phonon excitations in a conventional experimental arrangement.
关键词： optical phonon modes,nonpolaritonic,polaritonic,silica,electron energy loss spectroscopy,EELS,silicon
更新于2025-09-23 15:21:21
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Characterization of the Piezoresistive Effects of Silicon Nanowires
摘要： Silicon nanowires (SiNWs) have received attention in recent years due to their anomalous piezoresistive (PZR) effects. Although the PZR effects of SiNWs have been extensively researched, they are still not fully understood. Herein, we develop a new model of the PZR effects of SiNWs to characterize the PZR effects. First, the resistance of SiNW is modeled based on the surface charge density. The characteristics of SiNW, such as surface charge and effective conducting area, can be estimated by using this resistance model. Then, PZR effects are modeled based on stress concentration and piezopinch effects. Stress concentration as a function of the physical geometry of SiNWs can amplify PZR effects by an order of magnitude. The piezopinch effects can also result in increased PZR effects that are at least two times greater than that of bulk silicon. Experimental results show that the proposed model can predict the PZR effects of SiNWs accurately.
关键词： nonlinearity,silicon nanowire,surface depletion effects,piezoresistive effects
更新于2025-09-23 15:21:21
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Effect of High Temperature Forming Gas Annealing on Electrical Properties of 4H-SiC Lateral MOSFETs with Lanthanum Silicate and ALD SiO<sub>2</sub> Gate Dielectric
摘要： We investigated the impact of an initial lanthanum oxide (La2O3) thickness and forming gas annealing (FGA) conditions on the MOSFET performance. The FGA has been shown to dramatically improve the threshold voltage (VT) stability of 4H-SiC MOSFETs. The FGA process leads to improve VT instability and high field effect mobility due to reduction of the interface states density as well as traps by passivating the dangling bonds and active traps in the Lanthanum Silicate dielectrics. By optimizing the La2O3 interfacial layer thickness and FGA condition, SiC MOSFETs with high threshold voltage and high mobility while maintaining minimal VT shift are realized.
关键词： Silicon carbide,Lanthanum Silicate,Atomic layer deposition,Forming Gas Annealing
更新于2025-09-23 15:21:21
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Generation and distribution of residual stress during nano-grinding of monocrystalline silicon
摘要： Residual stress generated in grinding process of monocrystalline silicon can cause the wafer warpage, and di?culties in subsequent processes such as holding and scribing. It can also lead to the formation of cracks and the occurrence of corrosion, which is harmful for electrical performance of silicon component. In this study, with the method of step-wire wet etching, the phase transformation and distribution of residual stress in ground silicon wafer were examined by confocal laser micro-Raman spectroscopy. As the etching depth going down, the residual stress exhibits in the trends of decreasing of compressive stress and following a scatter distribution of tensile stress. During the nano-grinding processes of monocrystalline silicon, the generation mechanism of residual stress is computed by a series of the molecular dynamic (MD) simulation. Subsurface damage (SSD) in the form of phase-transformed silicon is observed, and the depth of SSD varies by the depth of cut. The volume shrinkage of phase-transformed silicon is also studied to explain the grinding mechanism and the reason for inducing residual stress of ground silicon. By adopted the Stony theory and volume shrinkage rate of amorphous phase from MD results, a theoretical model is established to determine the trend of compressive stress in subsurface of ground silicon.
关键词： monocrystalline silicon,residual stress,nano-grinding,phase transformation,molecular dynamics
更新于2025-09-23 15:21:21
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Run-to-run control of PECVD systems: Application to a multiscale three-dimensional CFD model of silicon thin film deposition
摘要： Deposition of amorphous silicon thin films via plasma-enhanced chemical vapor deposition (PECVD) and batch-to-batch operation under run-to-run control of the associated chambered reactor are presented in this work using a recently developed multiscale, three-dimensional in space, computational fluid dynamics model. Macroscopic reactor scale behaviors are linked to the microscopic growth of amorphous silicon thin films using a dynamic boundary which is updated at each time step of the transient in-batch simulations. This novel workflow is distributed across 64 parallel computation nodes in order to reduce the significant computational demands of batch-to-batch operation and to allow for the application and evaluation in both radial and azimuthal directions across the wafer of a benchmark, run-to-run based control strategy. Using 10 successive batch deposition cycles, the exponentially weighted moving average algorithm, an industrial standard, is demonstrated to drive all wafer regions to within 1% of the desired thickness set-point in both radial and azimuthal directions across the wafer surface. This is the first demonstration of run-to-run control in reducing azimuthal film nonuniformity. Additionally, thin film uniformity is shown to be improved for poorly optimized PECVD geometries by manipulating the substrate temperature alone, without the need for re-tooling of the equipment.
关键词： thin film silicon solar cells,parallel computing,multiscale modeling,computational fluid dynamics,run-to-run control,thin film growth
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Field Emission from n-Type Si Surface Sandblasted by Al<inf>2</inf>O<inf>3</inf> Fine Particles
摘要： An efficient silicon field emitter was fabricated by a simple sandblasting technique using Al2O3 fine particles. The fabricated rough structure worked well as an efficient field emitter. As the average emission current increased, the fluctuation ratio of the emission current decreased. The Si field emitters exhibited excellent emission-current stability in both long-term drift and short-term fluctuation.
关键词： finely nicked structure,silicon,sandblast
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Arrays of Si Field Emitter Individually Regulated by Si Nanowires High Breakdown Voltages and Enhanced Performance
摘要： We fabricate Si field emitter arrays (FEAs) with integrated Si nanowire current limiters and investigate a method to enable higher voltage operation, which can potentially increase achievable current densities. In this work, we focus on the dielectric breakdown occurring in the vicinity of the nanopillar. A deeper etch is shown to increase the breakdown voltage but at the expense of poorer field emission characteristics possibly due to the loss of mechanical support or increased surface states.
关键词： field emitter arrays,Silicon,breakdown voltage,current limiters
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Reduced energy-angle dispersion of output electrons from a nanocrystalline Si emitter with a monolayergraphene surface electrode
摘要： It is shown that the angle dispersions of output electrons of nanocrystalline silicon (nc-Si) quasiballistic electron emitter are significantly reduced by using a monolayer graphene as the surface electrode. This is closely linked with a remarkable enhancement in the emission efficiency and a suppression of the electron energy dispersion. The angle distribution curves become more directional at lower temperatures. These results are attributed to high transparency of monolayer graphene for quasiballistic electrons generated in the nc-Si layer. The intrinsic multi-tunneling cascade mode through nc-Si dots can be utilized most effectively by monolayer graphene surface electrode.
关键词： quasiballistic emission,monolayer graphene,nanocrystalline silicon
更新于2025-09-23 15:21:21