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Fluorometric determination of glucose based on a redox reaction between glucose and aminopropyltriethoxysilane and in-situ formation of blue-green emitting silicon nanodots
摘要： A method is described for fluorometric detection of glucose. It is based on the finding that silicon nanodots (SNDs) are formed from glucose and aminopropyltriethoxysilane (APTES) under mild experimental conditions. The SNDs thus formed have an average diameter of ～2 nm, exhibit good water dispersibility, blue fluorescence (with excitation/emission maxima at 410/475 nm), broad pH tolerance, and are photostable. The assay was applied to the quantification of glucose with high sensitivity, good specificity, and over a wide detection range (from 10 μM to 0.9 mM). It was applied to the determination of glucose in spiked serum samples and gave satisfactory results and recoveries.
关键词： Fluorescence detection,Enzyme-free analysis,Diabetes,Silicon nanoparticles
更新于2025-09-23 15:23:52
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The Belle II silicon vertex detector: Assembly and initial results
摘要： The "chip-on-sensor" concept of this detector minimizes the distance of the signal propagation from the double-sided silicon detector strips to the readout chips and thus reduces noise from strip capacitance. One half of the detector is built, the second half is being assembled at the time of writing. Prototypes have been tested in several test beams as well as in the so-called Phase 2 setup inside the detector structure. First results from a commissioning run of the Belle-II prototype SVD detector are presented. The measured signal-to-noise and timing performance are found to be according to design specifications.
关键词： Silicon vertex detector,First results,Assembly
更新于2025-09-23 15:23:52
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The sputtering yield of crystalline Si(1?0?0) surface by monoatomic and diatomic nitrogen ions impact
摘要： We have investigated the sputtering rate of thin crystalline silicon film forming silicon-on-insulator structure impinged by atomic and molecular nitrogen ions with medium energies of 25, 50, and 100 keV/(N atom) at several incident angles of 0, 30, 45, and 60°. The thickness of the surface silicon layer after ion irradiation was quantitatively estimated by Rutherford backscattering spectroscopy using 2.56-MeV 10B2+ ions with a grazing angle geometry to accurately analyze the thickness decrement in several nanometers for ultrathin Si layers. The sputtering rates were compared with a full-cascade TRIM simulation based on a binary collision approximation. We found that the sputtering yields of monoatomic N ion with higher energies (> 50 keV/N) took significantly higher than that of diatomic N2 ion, probably suggesting that a wake-like effect of relatively fast N^N molecular ions surviving for a long period due to a considerably strong triple bond. In addition, the observed sputtering yields for all present conditions were a few times smaller than that estimated by the full-cascade TRIM calculation using typical lattice parameters. We quantitatively discuss the details of sputtering phenomenon of crystalline silicon by nitrogen ions at medium energy region.
关键词： Medium energy,Molecular ion,Sputtering,Rutherford backscattering spectroscopy,Silicon
更新于2025-09-23 15:23:52
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Unidirectional light scattering by up–down Janus dimers composed of gold nanospheres and silicon nanorods
摘要： In this paper, a time-domain finite-difference (FDTD) method is used to simulate the scattering properties of a Janus dimer that a gold nanosphere is putted on the top of a silicon nanorod. We have demonstrated that the Janus dimer exhibits unidirectional scattering in the whole wavelength region of the sunlight. The unidirectionality of the dimer will improve with the height increase of the silicon nanorod and the gap decrease between two adjacent dimers. In our simulation, the forward-to-backward ratio (F/B) of the Janus dimer calculated dividing forward scattering spectra by backward scattering spectra can achieve the maximum of 20 when the height of silicon nanorod is 300 nm. What is more, we have applied the Janus dimers to amorphous silicon thin-film solar cells as antireflection structures. The reflectivity of the solar cells reduces by 39.40% and the short circuit current density improves by 5.04% than those of the reference. Therefore, the Janus dimers has a great application prospect in photovoltaic devices.
关键词： Amorphous silicon solar cells,Janus dimers,Unidirectional scattering,Electric and magnetic dipole resonance
更新于2025-09-23 15:23:52
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Atomically precise expansion of unsaturated silicon clusters
摘要： Small- to medium-sized clusters occur in various areas of chemistry, e.g. as active species of heterogeneous catalysis or transient intermediates during chemical vapor deposition. The manipulation of stable representatives is mostly limited to the ligand periphery, virtually excluding the systematic variation of the property-determining cluster scaffold. We now report the deliberate expansion of a stable unsaturated silicon cluster from six to seven and finally eight vertices. The consecutive application of lithium/naphthalene as reducing agent and decamethylsilicocene as electrophilic source of silicon results in the expansion of the core by precisely one atom with the potential of infinite repetition.
关键词： silicon,cluster compounds,main group elements,subvalent compounds,anions
更新于2025-09-23 15:23:52
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Separation of boron from silicon by steam-added electron beam melting
摘要： Removal of boron from silicon is a tough task by traditional directional solidification and vacuum refining techniques, due to its large and inappropriate segregation coefficient and low saturated vapor pressure. At high temperature boron react with oxygen to form volatile boron oxides which can be evaporated. So, the removal procedure of boron from silicon melt is investigated by incorporating a small amount of water vapor above the melted surface. The results show that boron is oxidized to mainly form BO and evaporated with 28% removal efficiency by average. It is considered that oxygen atoms experience a series of physical and chemical processes, such as a chemical reaction in the bulk of the melt, evaporation from the melt surface, transportation across the gas phase and ionization due the electron beam, which is conducive to the continuous removal of boron.
关键词： Electron beam melting,Photovoltaic,Boron removal,Oxygen self-circulating path,Solar-grade silicon
更新于2025-09-23 15:23:52
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Improved galvanic porous silicon fabrication using patterned electrodes
摘要： On-chip porous silicon can be fabricated in a number of ways, but perhaps the simplest is a galvanic method that requires no external power supply. While this etch process is relatively simple, the etch is highly dependent on the surface area ratio (SAR) of a backside precious metal and frontside silicon surface, which respectively act as the cathode and the anode of an electrochemical cell. The SAR controls the etch current density, and therefore local variations can create high current densities that have detrimental effects on the quality of the final porous silicon film. The present study investigates the use of patterned backside platinum electrodes with the galvanic etch technique. The use of a patterned backside electrode that mimics the silicon pattern on the frontside, provides a more consistent etch current throughout the entire sample, and thus a more uniform porous silicon film. A triangular shape porous silicon film was tested in this work for comparison to a previous study utilizing an unpatterned electrode. With patterned electrodes, an etch depth variation percentage was observed throughout the length of the film of 8%. This is a considerable improvement over a 108% depth variation observed with a similar frontside silicon pattern and an unpatterned backside electrode.
关键词： porous silicon,electrochemical etching,mesoporous,galvanic etching
更新于2025-09-23 15:23:52
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A turn-on fluorescent probe for vitamin C based on the use of a silicon/CoOOH nanoparticle system
摘要： The authors describe a fluorometric method for the turn-on determination of vitamin C (ascorbic acid). The blue fluorescence of silicon nanoparticles (SiNPs; with excitation/emission maxima at 350/450 nm) is found to be quenched by CoOOH nanoparticles (NPs). In the presence of vitamin C, the CoOOH NPs are decomposed by a redox reaction between the diol group of vitamin C and CoOOH NPs. As a result, fluorescence recovers. On the basis of this finding, a fluorometric method was designed for the turn-on detection of vitamin C. Under optimal conditions, the method has a low detection limit (0.47 μM) and a linear response in the 0.5 μM to 20 μM a concentration range. It was successfully applied to the determination of vitamin C in spiked red grape and orange juice, and in vitamin C tablets.
关键词： Fluorescence Bturn-on^ strategy,Cobalt oxyhydroxide nanoparticles,Fluorometry,Stern-Volmer plot,Surface energy transfer,Redox reaction,Inner filter effect,Quenching,Silicon nanoparticles
更新于2025-09-23 15:23:52
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In Situ Measurement of Phase Boundary Kinetics during Initial Lithiation of Crystalline Silicon through Picosecond Ultrasonics
摘要： Studying the kinetics of phase transformation and phase boundary propagation during initial lithiation of silicon electrodes in lithium ion batteries is relevant to understanding their performance. Such studies are usually challenging due to the difficulties in measuring the phase boundary velocity in the interior of the sample. Here we introduce a non-invasive, in situ method to measure the progression of the phase boundary in a planar specimen geometry while maintaining well-controlled lithium flux and potential. We developed an apparatus integrating an electrochemical cell with picosecond ultrasonics to probe the propagating phase boundary in real time. Phase propagation during initial lithiation of crystalline silicon, which is an example of a high capacity anode, is investigated. The primary objective of this manuscript is to report on the experimental technique development and some preliminary results. For lithiation normal to the (100) plane, we observe the phase boundary velocity to be approximately 12 pm/s and x to be 3.73 in LixSi under galvanostatic lithiation with a current density of 40 μA/cm2. The growth rate of the lithiated phase and the reaction rate coefficient are examined using a Deal-Grove type model.
关键词： Lithium ion battery,In situ,Phase boundary propagation,Crystalline silicon,Picosecond ultrasonics
更新于2025-09-23 15:23:52
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Effect of Macro-scale Mechanical Stress of Silicon Wafer on Room Temperature Photoluminescence Signals
摘要： Mechanical stress was applied to single side polished and double side polished Si wafers in polypropylene wafer containers for different localized stress levels and durations. Room temperature photoluminescence (RTPL) spectra from Si wafers were measured before and after applying localized mechanical stress. Significant changes (up to 26% increase) in RTPL intensity were measured from areas under different stress levels even 1 year after the fixtures for mechanical stress generation were removed. Significant effects of localized mechanical stress on RTPL intensity variations were measured up to 49 days after the fixture removal. Nearly fully relaxed RTPL signatures for localized mechanical stress were measured 450 days after the fixture removal. RTPL intensity is found to be very sensitive to the externally applied macro-scale mechanical stress of Si wafers and residual (or memorized) internal stress even after removal of fixtures for external mechanical stress generation.
关键词： Silicon,room temperature photoluminescence,stress relaxation,mechanical stress
更新于2025-09-23 15:23:52