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Study of indium and antimony incorporation into SnS2 single crystals
摘要： Pure SnS2, 5% In-doped SnS2, 15% In-doped SnS2, 5% Sb-doped SnS2 and 15% Sb-doped SnS2 single crystals are grown in closed sealed quartz ampoule by direct vapour transport technique. The energy dispersive analysis of X-rays analysis of all the five as-grown single crystals showed them to be stoichiometric. The X-ray diffraction analysis showed that all the crystals are single phase possessing a hexagonal structure with (001) preferential orientation. The surface morphology of as-grown single crystals studied by scanning electron microscopy and optical microscopy showed crystal growth is by layer growth mechanism supported by screw dislocation. Selected area electron diffraction showed hexagonal spot pattern confirming the single crystalline nature of the crystals. Optical bandgap of the as-grown crystals determined by UV-Vis-NIR spectroscopy showed that the single crystals possess direct optical bandgap and the value varied between 1.89 and 2.31 eV. The photoluminescence spectra study showed the presence of six peaks. The Raman spectra showed SnS2 type the A1g vibrational mode and shifting in A1g vibrational mode with In and Sb doping. The results are elaborated in details.
关键词： Single crystal growth,Doping,Characterization,Crystal morphology,X-ray diffraction,Crystal structure
更新于2025-09-10 09:29:36
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Synthesis, growth, optical, mechanical and dielectric studies on NLO active monometallic zinc iodate [Zn(IO3)2] crystal for frequency conversion
摘要： The monometallic single crystal of zinc iodate [Zn(IO3)2] was grown by slow cooling technique with the dimension up to 14 x 4 x 3 mm3 in the period of 35-45 days. Single crystal X-ray diffraction (XRD) analysis shows that the zinc iodate (ZI) crystal crystallizes in monoclinic crystal system with space group P21. The various functional groups of ZI were identified by FTIR analysis. The optical absorption of the grown crystal has been ascertained by UV-vis-NIR absorption studies. Second harmonic generation (SHG) efficiency of ZI is 2.75 times greater than that of KDP sample. The microhardness test of the grown crystal suggests that the crystal possesses relatively high mechanical strength. From the mechanical test certain mechanical parameters were determined. The dielectric behavior of the ZI crystal at different temperatures with varying frequencies shows the normal behavior activity of the grown crystal. The field dependent conductivity study was carried out.
关键词： Single crystal growth,Monometallic iodate,Dielectric studies,Microhardness,optical properties
更新于2025-09-10 09:29:36
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Ecofriendly Mg2Si-based photodiode for short-wavelength IR sensing
摘要： N-type Mg2Si single crystal ingot has been successfully grown by the Vertical Bridgman technique. The Hall Effect measurement at RT revealed a moderate Hall mobility (~ 446 cm2/Vs), electrical resistivity (~ 1.4 Ω. cm) and carrier density (~1016 cm?3) for the grown crystal. The J-V characteristics of the fabricated Au/n-Mg2Si Schottky junction and Au/Ag-doped-p-type-Mg2Si/n-type-Mg2Si/Ag pn-junction diode showed better diode behavior with higher rectifying ratio in comparison with the same reported junctions. Analysis of the experimental forward J-V characteristics of our fabricated diodes based on the thermionic emission (TE) model demonstrated that our Schottky and pn-junction Mg2Si diode exhibited much lower series resistance in comparison with the survey data, confirming that precise polishing of Mg2Si surfaces with an oil-based diamond greatly improved the contact with the evaporated metal, enabling lower interfacial resistance between the evaporated metal and Mg2Si wafer. In addition, the manufactured Mg2Si pn-junction photodiode showed a clear photoresponsivity in the wavelength range from 0.95 to 1.8 μm with a maximum zero-biased photoresponse of 14 mA/ W at 1.4 μm and a photon energy threshold of approximately 0.66 eV. These results indicate that our diode is promising to detect the SWIR light in the wavelength range from 0.95 to 1.8 μm.
关键词： Electrical properties,IR sensors,Semiconducting silicides,Single crystal growth
更新于2025-09-10 09:29:36