研究目的
To fabricate and characterize Au/n-Mg2Si Schottky junctions and Mg2Si pn-junction photodiodes by a thermal diffusion process for SWIR light sensing.
研究成果
The fabricated Mg2Si-based Schottky and pn-junction diodes showed clear diode behavior and higher rectifying ratio compared to reported diodes. The Mg2Si pn-junction photodiode demonstrated clear photoresponsivity in the SWIR range, indicating its potential as an eco-friendly sensor for SWIR light. Precise polishing of Mg2Si surfaces with an oil-based diamond improved metal contact and reduced interfacial resistance.
研究不足
The high carrier density of the Mg2Si wafers and the need for further optimization of Ohmic contact for n-Mg2Si semiconductor to reduce leakage current and improve diode behavior.
1：Experimental Design and Method Selection:
The Vertical Bridgman technique was used for the growth of n-type Mg2Si single crystal. The J-V characteristics of the fabricated diodes were analyzed based on the thermionic emission (TE) model.
2：Sample Selection and Data Sources:
High purity elements of Mg (5N-grade) and Si (11N-grade) were used. The grown crystal was characterized by powder X-ray diffraction, Laue back-reflection, SEM-EDX, and XRF measurements.
3：List of Experimental Equipment and Materials:
Pyrolytic graphite (PG) coated carbon crucible, SmartLab X-ray diffractometer, Rigaku Co., Ltd., TM3000 SEM, NanoScope V AFM, Sigma Probe Spectrometer, ResiTest8300 Hall effect measurement system, UEP-3000-2C E-beam evaporator.
4：Experimental Procedures and Operational Workflow:
The crystal was grown, polished, and characterized. Diodes were fabricated by evaporating Au and Ag, followed by rapid thermal annealing.
5：Data Analysis Methods:
The forward J-V characteristics were analyzed using the standard thermionic emission (TE) model with Cheung approach to extract diode parameters.
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