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Distributed Small-signal Equivalent Circuit Model and Parameter Extraction for SiGe HBT
摘要： In this paper, we present an improved high frequency small-signal distributed model for SiGe HBTs under forward-active mode based on the transmission line theory. The distributed nature of the transistor structure is taken into account in the proposed model. The single SiGe HBT is considered to be a cascade of many infinitesimal transistors, connected with the intrinsic base resistance. The closed-form solutions of admittance parameters for the distributed model are derived by solving the transmission line equation. With reasonable approximation and simplification, the model parameters are then directly extracted based on the nonlinear rational function fitting. The new improved distributed model and parameter extraction technique are validated with a 1×1.2×30 μm2 SiGe HBT from 100 MHz to 20.89 GHz. The simulated S-parameters in the proposed transmission line model are in close agreement with the measured data, and the frequency characteristics of the transistors are well predicted.
关键词： parameter extraction,rational function fitting,transmission line,SiGe HBT,Device modeling,small-signal model
更新于2025-09-23 15:23:52
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Differential evolution based small signal modeling of GAN HEMT
摘要： In this article differential evolution based method of small signal modeling of GAN HEMT has been investigated. The method uses a unique search space exploration strategy to obtain optimized values of intrinsic and extrinsic elements pertaining to compact small signal model from extracted equivalent circuit elements and measured S-parameter data. Effectiveness of the method has been illustrated by comparing the measured S-parameter data of a 4 × 0.1 × 75 μm2 GaN/SiC HEMT in the frequency range of 1 to 30 GHz wherein modeled and measured data are in good agreement.
关键词： GaN HEMT,small signal model,differential evolution
更新于2025-09-19 17:15:36
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[IEEE 2019 14th European Microwave Integrated Circuits Conference (EuMIC) - Paris, France (2019.9.30-2019.10.1)] 2019 14th European Microwave Integrated Circuits Conference (EuMIC) - HEMT Small-Signal Modelling for Voltage-Controlled Attenuator Applications
摘要： Multi-bias measured and simulated S parameters are presented to validate the extension of an accurate on/off state HEMT switch small-signal modelling procedure to analog attenuator applications. Good agreements between measured and simulated multi-bias S parameters of the HEMT with a gate resistor are achieved by using only a common-gate real test-structure (without the gate resistor), which not only confirm the validity of the modelling for both digital and analog attenuator applications, but also validate the applicability of the capacitance network and extraction methods under more bias conditions.
关键词： small-signal model,voltage-controlled attenuator (VCA),high electron-mobility transistor (HEMT),monolithic microwave integrated circuit (MMIC)
更新于2025-09-12 10:27:22
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A new method for determination of PAD capacitances for GaAs HBTs based on scalable small signal equivalent circuit model
摘要： A new direct extraction method to determine the parasitic capacitances for HBTs is presented in this paper. The main advantage is that base parasitic capacitance Cpb can be extracted by using three di?erent size HBTs with the same pad pro?le. This method is based on an improved small-signal model, which takes into account the distribution e?ects of the base and collector feedlines. Good agreement is obtained between the measured and modeled results for the 1 × 3 × 12 μm2, 2 × 2 × 20 μm2 and 1 × 3 × 40 μm2 (number of emitter ?ngers × emitter width × emitter length) GaAs HBTs up to 40 GHz.
关键词： Scalable model,HBT,Parameter extraction,Small signal model,Equivalent circuits
更新于2025-09-09 09:28:46
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Extraction and verification of the small-signal model for InP DHBTs in the 0.2–325 GHz frequency range
摘要： This study presents the extraction and veri?cation of a small-signal model suitable for characterizing THz InP double heterojunction bipolar transistors (DHBTs). The π-type topology is adopted in the intrinsic model. Capacitances Ccx and Cce are used to characterize the capacitive parasitics caused by the routing line connecting the collector terminal, base terminal and emitter terminal, respectively. The inductive parasitics introduced by the routing line are also considered. The initial values of the model parameters are extracted using a direct extraction method. The model and extraction method for the model parameters are veri?ed by adopting an InP DHBT with 1 emitter ?nger and an emitter size of 0.5 μm × 5 μm. The simulation results correspond with the measured results in the frequency range from 200 MHz to 325 GHz.
关键词： InP DHBTs,veri?cation,small-signal model,extraction
更新于2025-09-09 09:28:46