研究目的
To validate the extension of an accurate on/off state HEMT switch small-signal modelling procedure to analog attenuator applications.
研究成果
The multi-bias S parameters validations well extend an accurate on/off state HEMT switch small-signal modelling procedure to a wider range of applications. The modelling can be used for switches, digital (step) attenuators, and analog attenuators.
研究不足
The small-signal intrinsic model should be further extended to be suitable for both positive Vds bias and negative Vds bias for large-signal (high-power) applications.
1：Experimental Design and Method Selection:
The study employs a common-gate real test-structure for parameter extraction without the gate resistor.
2：Sample Selection and Data Sources:
A
3：25-μm T-gates, 200-μm total gate-width common-gate GaAs HEMT is used. List of Experimental Equipment and Materials:
On-wafer measurement system for S-parameters (1-31GHz).
4：Experimental Procedures and Operational Workflow:
The gate is biased at various voltages to cover the control voltages between the on state and the off state.
5：Data Analysis Methods:
The S parameters of the common-gate HEMT are used for parameter extraction, and the S parameters of the HEMT with a 1.5 k? gate resistor are used for final validations.
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