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Ti/Au/Al/Ni/Au low contact resistance and sharp edge acuity for highly scalable AlGaN/GaN HEMTs
摘要： In this letter, we have reported a novel metal scheme Ti/Au/Al/Ni/Au for ohmic contact on AlGaN/GaN high electron mobility transistors (HEMTs). The reported metal scheme is observed to show minimum metal out-diffusion and sharp edge acuity at high temperature annealing, which facilitates aggressive scaling of source drain separation (LSD). We have demonstrated LSD as low as 300 nm with gate length (Lg) of 100 nm for this metal stack. We observed improvement in ON-Resistance (RON) from 3 ?.mm to 1.25 ?.mm, transconductance (gm) from 276 mS/mm to 365 mS/mm, saturation drain current (IDS,sat) from 906 mA/mm to 1230 mA/mm and unity current gain frequency (fT) from 70 GHz to 93 GHz by scaling LSD from 3 μm to 300 nm. The gate length for all devices were 100 nm.
关键词： Edge acuity,HEMT,smooth surface,current gain cut-off frequency,ohmic contact resistance,GaN
更新于2025-09-23 15:21:01
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Facile Fabrication of Highly Conductive, Ultra-Smooth and Flexible Silver Nanowire Electrode for Organic Optoelectronic Devices
摘要： So far, one of the fundamental limitations of silver nanowires is the high contact resistance among their junctions. Moreover, a rough surface due to its random arrangement is inevitable to electrical short when the nanowire-based electronics is driving. To improve the contact resistance, we suggest the particle-shape nanocrystals are intentionally reduced at the junctions by a localized Joule-heat reduction approach from the silver ions. Via localized reductions, the reduced nanoparticles effectively weld the junction’s areas resulting in a 19% decrease in sheet resistance to 9.9 ?sq-1. Besides, the nanowires are embedded into a polyamide film with a gentle hot pressing. Consequently, the roughness was considerably dropped so that it was successful to demonstrate OLEDs (organic light-emitting diodes) with nanowires, which was beneficial to be laminated with OLEDs under the low temperature. The experimental results show the Ag NW embedding films reach 10.9?sq-1 of the sheet resistance at 92% transmittance and the roughness was only 1.92nm.
关键词： embedding,transferring,joule-heat reduction,smooth surface,silver nanowire,transparent conductive electrode
更新于2025-09-19 17:13:59
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Researches on formation mechanism of ultra-smooth surface during ion beam sputtering of fused silica
摘要： Ion beam ?guring (IBF) is well identi?ed as a highly deterministic method for the ?nal ?guring of nanometer-precision optical surfaces, where the ?guring process involves an atomic/molecular material removal mechanism by using ion beam sputtering (IBS). However, IBS-induced na-noscale phenomena make the ultra-smooth surface formation process full of uncertainties that these phenomena would seriously in?uence the fabrication of high-performance optical com-ponents. In this work, the microscopic morphology evolution theories, including the IBS-induced microscopic behaviors and microscopic material densi?cation dependent sputtering, are in-vestigated to discuss the ultra-smooth surface manufacturability of fused silica. Our research results indicate that IBS-induced nanostructuring behaviors can be used for the preparation of ultra-smooth surfaces, which requires smoothing e?ects dominate over sputtering roughening during the surface morphology evolution. Meanwhile, we ?nd that IBS is very sensitive to the change of the microscopic material properties, and speci?cally the ultra-smooth manufacturing process would be seriously a?ected when the surface/subsurface damages are generated in the former machining procedure. To control the microscopic material change and achieve ultra-smooth surface, a combined manufacturing technology including chemical-mechanical polishing (CMP) and IBF is proposed. Through the experimental investigation, fused silica with surface roughness down to 0.1nm root mean square (RMS) level is obtained by using this combined technology, which demonstrates the feasibility of our proposed method.
关键词： Surface microscopic behavior,Ion beam sputtering,Ultra-smooth surface
更新于2025-09-10 09:29:36