研究目的
Investigating the effects of a novel Ti/Au/Al/Ni/Au metal scheme on ohmic contact resistance, edge acuity, and scaling of source drain separation in AlGaN/GaN HEMTs.
研究成果
The Ti/Au/Al/Ni/Au metal scheme facilitates high scaling of source drain separation to 300 nm, showing significant improvements in ON-Resistance, transconductance, saturation drain current, and unity current gain frequency, making it a promising approach for high power and high frequency applications.
研究不足
The study focuses on the performance of a specific metal scheme under certain conditions; variations in material quality or fabrication processes may affect results. The scalability beyond 300 nm LSD and long-term reliability are not discussed.
1：Experimental Design and Method Selection:
The study involves the fabrication of AlGaN/GaN HEMTs with a novel Ti/Au/Al/Ni/Au metal scheme for ohmic contacts, comparing its performance with conventional Ti/Al/Ni/Au contacts.
2：Sample Selection and Data Sources:
Epitaxial AlGaN/GaN heterostructure grown by MOCVD on SiC substrate.
3：List of Experimental Equipment and Materials:
Electron-beam lithography, e-beam evaporation, ICP-RIE for mesa isolation, Agilent B1500A semiconductor device analyzer for DC characterization, Agilent PNA N5244A network analyzer for RF characterization.
4：Experimental Procedures and Operational Workflow:
Mesa isolation, ohmic contact patterning, metal deposition, annealing, gate definition, and device characterization.
5：Data Analysis Methods:
Extraction of contact and sheet resistance values from TLM, analysis of DC and RF characteristics.
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