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[IEEE 2019 IEEE International Conference on Intelligent Techniques in Control, Optimization and Signal Processing (INCOS) - Tamilnadu, India (2019.4.11-2019.4.13)] 2019 IEEE International Conference on Intelligent Techniques in Control, Optimization and Signal Processing (INCOS) - Hardware and Software Co-emulation Technique based Solar Photovoltaic Sources Emulator
摘要： Photo-Voltaic (PV) Emulator plays a key role in performance evaluation of the PV based energy conversion systems, which is challenging and time-consuming task under varying environmental conditions. This paper presents a hardware and software co-emulation technique based Solar Photo-Voltaic Module Emulator (SPVME) to emulate solar PV Sources. The mathematical model of solar PV module developed in Multisim works as a reference to emulate the solar PV module characteristics. A Programmable DC power supply is employed to replicate the emulated PV module characteristics behavior. LabVIEW software is used to integrate the solar PV module developed in Multisim with the programmable DC power supply. The proposed SPVME system can be used for performance analysis of PV sources like PV module, string and array. The prototype of the proposed SPVME is analyzed with 60 W PV module under varying irradiation and the output result exhibits the accuracy of the developed SPVME prototype.
关键词： Hardware and Software Co-emulation,Performance Evaluation,Single Diode Solar PV cell model,Solar Photovoltaic Module Emulator (SPVME)
更新于2025-09-16 10:30:52
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Influence of Temperature on the Output Parameters of a Photovoltaic Module Based on Amorphous Hydrogenated Silicon
摘要： The light load current-voltage characteristics of a solar photovoltaic module based on amorphous hydrogenated silicon have been studied at different temperatures under conditions of natural solar illumination (Рrad = 870 ± 10 W/m2). It has been found that the temperature dependence of the photocurrent has two slopes due to a change in the generation–recombination mechanism. The increase in the value of the short-circuit current with increasing temperature of the photovoltaic module is explained by a rise in the drift lengths of minority charge carriers due to an increase in the lifetime of minority carriers. In this case, the quasi Fermi level shifts to the conduction band, and the concentration of recombination centers decreases due to recharging of defective levels (D0 → D–). The decrease in the value of the open-circuit voltage with increasing temperature is explained by the exponential increase in the reverse saturation current and decrease in the band gap of the semiconductor. It has been found that the fill factor (FF) of the current–voltage characteristics decreases with increasing temperature, most likely due to a decrease in the shunt resistance (Rsh), which connects parallel to the p–n junction, consists of parasitic resistances, and leads to an increase in leakage currents. The temperature coefficient of the maximum output power has a positive value in the range of 320–332 K, i.e., increases with temperature. It has been revealed that the values of shunt and series resistance decrease with increasing temperature. A large loss of power output (up to 19%) has been observed on the series resistance of the solar photovoltaic module in the temperature range of 320–332 K. With increasing temperature, the loss of generated power on the shunt resistance grows sublinearly. The efficiency of the solar photovoltaic module decreases from 7.95 to 7.65% and has a coefficient of temperature dependence of efficiency, which decreases from ≈ –0.029%/K to ≈ –0.046%/K.
关键词： shunt resistance,series resistance,efficiency,temperature,open-circuit voltage,fill factor,solar photovoltaic module,amorphous hydrogenated silicon,short-circuit current
更新于2025-09-11 14:15:04