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Hot Carrier and Surface Recombination Dynamics in Layered InSe Crystals
摘要： Layered indium selenide (InSe) is a van der Waals solid that has emerged as a promising material for high-performance ultrathin solar cells. The optoelectronic parameters that are critical to photoconversion efficiencies, such as hot carrier lifetime and surface recombination velocity, are however largely unexplored in InSe. Here, these key photophysical properties of layered InSe are measured with femtosecond transient reflection spectroscopy. The hot carrier cooling process is found to occur through phonon scattering. The surface recombination velocity and ambipolar diffusion coefficient are extracted from fits to the pump energy-dependent transient reflection kinetics using a free carrier diffusion model. The extracted surface recombination velocity is approximately an order of magnitude larger than that for methylammonium lead-iodide perovskites, suggesting that surface recombination is a principal source of photocarrier loss in InSe. The extracted ambipolar diffusion coefficient is consistent with previously reported values of InSe carrier mobility.
关键词： transient reflection spectroscopy,hot carrier dynamics,Layered indium selenide,solar cell,van der Waals solid,surface recombination velocity,ambipolar diffusion coefficient
更新于2025-09-23 15:22:29
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Performance analysis of c-Si heterojunction solar cell with passivated transition metal oxides carrier-selective contacts
摘要： Transition metal oxides (TMOs) as passivating carrier-selective contact layers are investigated for silicon heterojunction solar cells. MoOx as hole-selective layer and TiOx as an electron-selective layer are explored in detail to design a high-efficiency silicon heterojunction solar cell without any specified surface passivation layer. The thickness and optical transparency of the MoOx hole-selective layer have been evaluated through optical simulation. The impact of TMOs’ work function and their passivation quality has been examined in detail to extract the maximum conversion efficiency from silicon heterojunction solar cells. To increase the optical absorption in c-Si, the micro–nanopillar structure has also been implemented. It has been found that the barrier height at the TMO/silicon heterocontact plays a significant role in the overall performance improvement of the solar cell. The optimized cell design without doping and separate passivating layer can achieve a power conversion efficiency of ~ 22%. Our findings open the potential pathways and opportunities to obtain simplified heterojunction solar cells at lower temperatures and without impurity doping.
关键词： Surface recombination velocity,Carrier-selective contact layers,Transition metal oxides,c-Si heterojunction solar cells
更新于2025-09-23 15:21:01
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Extraction of the minority carrier transport properties of solar cells using the Hovel model and genetic algorithms
摘要： In this paper, a quick and accurate method for extraction of the minority carrier transport properties of p-n or n-p junction solar cells, such as diffusion lengths and surface recombination velocities, is presented. The knowledge of these parameters is essential to investigate factors that limit the performance of photovoltaic devices. The proposed method, based on genetic algorithms and the analytical Hovel model, is used to fit the external quantum efficiency (EQE) curves of solar cells with different emitter thicknesses. As a demonstrative example of application of the procedure carried out in this work, theoretical and experimental EQE curves of n-p GaAs solar cells under the standard AM1.5G spectrum have been used in order to extract the desired parameters. Errors less than 2.4% have been obtained, which shows the ability of the developed tool. An analysis of the total number of iterations is presented. Results obtained can be used to improve the design, optimization and manufacturing process of high efficiency photovoltaic devices.
关键词： diffusion length,surface recombination velocity,Hovel model and genetic algorithms,solar cells
更新于2025-09-23 15:19:57
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[IEEE 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Bengaluru, India (2018.12.17-2018.12.19)] 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Mapping of Bulk Diffusion Length and Effective Back Surface Recombination Velocity in Silicon Solar Cells
摘要： Mapping of diffusion length (L) in the bulk region and effective back surface recombination velocity (SRV) in Al-BSF and PERC Si solar cells has been carried out by utilizing the spectral response (SR) at desired wavelengths. Light beam induced current (LBIC) technique was used to generate the maps of SR and re?ectivity (R) on cell area (6”x6”). MATLAB tool was used to convert the spatial maps of SR and R into L and SRV. We found that (i) the distribution of L in multi-crystalline cells varied from grain to grain in wide range (150-600 μm) while in mono-crystalline cells, it varied in rather narrow range (450-600 μm) ; (ii) the values of SRV for PERC cells (120-250 cm/sec for mono-crystalline and 100-250 cm/sec for multi-crystalline) and Al-BSF cells (320-400 cm/sec for mono-crystalline and 250-350 cm/sec for multi-crystalline) differ by considerable magnitude due to passivation quality at back side. Three multi-crystalline Al-BSF Si solar cells of cell ef?ciencies 17.6%, 17.9% and 18.1% were investigated with the proposed methodology and demonstrated that the ef?ciency de?cit is primarily due to defects present in bulk material and poor back surface passivation.
关键词： Light beam induced current,Surface recombination velocity,Diffusion length,Si solar cells
更新于2025-09-23 15:19:57