摘要： In this paper, a quick and accurate method for extraction of the minority carrier transport properties of p-n or n-p junction solar cells, such as diffusion lengths and surface recombination velocities, is presented. The knowledge of these parameters is essential to investigate factors that limit the performance of photovoltaic devices. The proposed method, based on genetic algorithms and the analytical Hovel model, is used to fit the external quantum efficiency (EQE) curves of solar cells with different emitter thicknesses. As a demonstrative example of application of the procedure carried out in this work, theoretical and experimental EQE curves of n-p GaAs solar cells under the standard AM1.5G spectrum have been used in order to extract the desired parameters. Errors less than 2.4% have been obtained, which shows the ability of the developed tool. An analysis of the total number of iterations is presented. Results obtained can be used to improve the design, optimization and manufacturing process of high efficiency photovoltaic devices.