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A new method of accurately measuring photoconductive performance of 4H-SiC photoconductive switches
摘要： A new method of accurately measuring the photoconductive performance of photoconductive semiconductor switch (PCSS) was proposed. By this method, we succeeded extracting the photoconductivity of 4H-SiC substrate free from the obstruction of parasitic inductance in the test circuit. Photoconductive performance of the PCSS were precisely measured, where a maximum on-state photoconductivity of 6.26 (Ω · m)?1, a minimum on-state resistivity of 0.16 Ω · m and an accurate minimum resistance of 1.71 Ω were obtained for SiC substrate. The quantitative relationship between the on-state resistance and the reciprocal of area of laser trigger region was proved. The performance of PCSSs can be continuously adjusted to adapt different application requirements just by changing the area of laser excitation region.
关键词： pulse-power system switches,silicon carbide,Photoconductive switch,on-state resistance,intrinsic photoconductivity
更新于2025-09-04 15:30:14
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[IEEE 48th European Solid-State Device Research Conference (ESSDERC 2018) - Dresden (2018.9.3-2018.9.6)] 2018 48th European Solid-State Device Research Conference (ESSDERC) - HV Floating Switch Matrix with Parachute Safety Driving for 3D Echography Systems
摘要： The paper describes the design challenges and implemented solutions studied and in high voltage (HV) bidirectional and floating switch. The main characteristics are the isolation voltage up to positive and negative 200V, ultra-low power consumption for switch driving, fully floating at high slew rate up to 30V/ns. The final IC integrates a matrix of 512 (8x64) independent HV switch, the other important requirement is the minimal area.
关键词： multiplexer,floating,slew rate,DMOS,pulser,switches,high voltage,ultrasound,echography,linearity
更新于2025-09-04 15:30:14
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Research on Time Jitter of GaAs Photoconductive Semiconductor Switches in the Negative Differential Mobility Region
摘要： Time jitter of GaAs photoconductive semiconductor switches (PCSS) is investigated at an optical excitation of 1053 nm wavelength and 500 ps pulse duration. The experimental results indicate that the time jitter of the GaAs PCSS exhibits a nonmonotonic variation in negative differential mobility (NDM) region. All of these time jitters are lower than the 4% of the rise time of the switching waveform. The optimum time jitter of ~15 ps is achieved at the onset of the NDM region. The theoretical relationship between the optical excitation parameters, the bias electric field and the time jitter of the GaAs PCSS are built up. The nonmonotonic behavior of the time jitter with electric field is attributed to the instability of the relative fluctuation of drift velocity caused by inter-valley transition of carriers in GaAs.
关键词： inter-valley transition of carriers,photoconductive semiconductor switches,gallium arsenide (GaAs),negative differential mobility (NDM),time jitter
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A Voltage-Edge-Rate-Limiting Soft-Switching Inverter for Wide-Bandgap Devices
摘要： Wide-bandgap (WBG) switches can achieve switching times on the order of several nanoseconds. However, faster switches generate larger inverter output dv/dt. Various deleterious effects attributed to large inverter dv/dt have been observed in various applications, especially in motor drive systems. The effects include false turn-on of WBG switches due to cross-talk, transient over-voltages at motor terminals, electromagnetic interference, and motor bearing failures due to micro arcs. A common approach for limiting peak inverter dv/dt involves the insertion of a dv/dt filter. However, the dv/dt filter introduces extra power losses and increases the size/weight of the heat sink. Soft-switching circuits can reduce inverter dv/dt and switching losses, but using soft-switching to accurately control dv/dt has not been fully explored. A new soft-switching circuit, entitled the auxiliary resonant soft-edge pole (ARSEP), is set forth. The ARSEP improves the available soft-switching circuits so that the dv/dt can be accurately controlled through circuit parameter design. An ARSEP inverter prototype based on SiC MOSFETs was designed, simulated, built, and tested to verify its performance and benefits. Compared to a conventional hard-switched inverter with a dv/dt filter, the ARSEP inverter results in a significant reduction in overall power loss, inductor volume, and weight.
关键词： SiC MOSFETs,soft-switching circuits,auxiliary resonant soft-edge pole (ARSEP),inverter output dv/dt,Wide-bandgap (WBG) switches
更新于2025-09-04 15:30:14