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Polycrystal Synthesis, Crystal Growth, Structure, and Optical Properties of AgGaGe <sub/><i> <i>n</i> </i> </sub> S <sub/> 2( <i> <i>n</i> </i> +1) </sub> ( <i>n</i> = 2, 3, 4, and 5) Single Crystals for Mid-IR Laser Applications
摘要： AgGaGenS2(n+1) crystal is a series of quaternary for mid-IR laser applications of nonlinear optical materials converting a 1.064 μm pump signal (Nd:YAG laser) to 4?11 μm laser output, but only AgGaGeS4 has attracted the most attention, remaining the other promising AgGaGenS2(n+1) crystal whose physicochemical properties can be modulated by n value. In this work, AgGaGenS2(n+1) (n = 2, 3, 4, and 5) polycrystals are synthesized by vapor transport and mechanical oscillation method with di?erent cooling processes. High-resolution X-ray di?raction analysis and re?nement have revealed that all the four compounds are crystallized in the noncentrosymmetric orthorhombic space group Fdd2, resulting in the excellent nonlinear optical property, and the distortion of tetrahedron with the variation of n value causes the discrepancy of physicochemical property. Besides, using the modi?ed Bridgman method, AgGaGenS2(n+1) single crystals with 15 mm diameter and 20?40 mm length have been grown. We have discussed the structure and composition of AgGaGenS2(n+1) by XPS spectra and analyzed the three kinds of vibration modes of tetrahedral clusters by the Raman spectra. The Hall measurement indicates that the AgGaGenS2(n+1) single crystals are p-type semiconductor, and the carrier concentration decreases with the increasing n value. All the transmittances of as-grown AgGaGenS2(n+1) samples exceeds 60% in the transparent range, especially the transmittance of AgGaGe2S6, is up to 70% at 1064 nm, and the band gap of as-grown crystal increases from 2.85 eV for AgGaGe2S6 to 2.92 eV for AgGaGe5S12. After a thermal annealing treatment, the absorptions at 2.9, 4, and 10 μm have been eliminated, and the band gap changed into the range of 2.89?2.96 eV.
关键词： Hall measurement,nonlinear optical materials,thermal annealing treatment,vapor transport,AgGaGenS2(n+1),Bridgman method,Raman spectra,mid-IR laser applications,XPS spectra,mechanical oscillation method
更新于2025-11-14 15:27:09
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Chemical Vapor Deposited Vanadium Pentoxide Nanosheets with Highly Stable and Low Switching Voltages for Effective Selector Devices
摘要： Recently, attempts to overcome the physical limits of memory devices have led to the development of promising materials and architectures for next-generation memory technology. The selector device is one of the essential ingredients of high-density stacked memory systems. However, complicated constituent deposition conditions and thermal degradation are problematic, even with effective selector device materials. Herein, we demonstrate the highly stable and low threshold voltages of vanadium pentoxide (V2O5) nanosheets synthesized by facile chemical vapor deposition, which have not been previously reported on the threshold switching properties. The electrons occupying trap sites in poly-crystalline V2O5 nanosheet contribute to the perfectly symmetric threshold switching feature at the bias polarity and low threshold voltages in V2O5, confirmed by high-resolution transmission electron microscopy measurements. Furthermore, we find an additional PdO interlayer in V2O5 nanodevices connected with a Pd/Au electrode after thermal annealing treatment. The PdO interlayer decreases the threshold voltages, and the Ion/Ioff ratio increases because of the increased trap density of V2O5. These studies provide insight into V2O5 switching characteristics, which can support low power consumption in non-volatile memory devices.
关键词： nanosheets,selector devices,vanadium pentoxide,threshold switching,thermal annealing treatment
更新于2025-09-10 09:29:36