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Preparation of Dielectric Films via Thermal Oxidation of MnO2/GaAs
摘要： MnO2 nanolayers (~29 nm) produced on the surface of single-crystal GaAs wafers by magnetron sputtering have been shown to act as oxygen transfer agents for the thermal oxidation of the semiconductor. The presence of MnO2 increases the oxide film growth rate by three to nine times relative to stimulator-free oxidation of GaAs. The films thus grown range in thickness from 35 to 200 nm and possess good dielectric properties (resistivity on the order of ~1010 Ω cm and dielectric strength in the range (5–8) × 106 V/cm). According to X-ray diffraction data, the films are enriched in oxidized arsenic and have a regular grain structure in the surface layer, with a roughness height within 30 nm (according to atomic force microscopy data).
关键词： nanofilms,thermal oxidation,gallium arsenide,oxides
更新于2025-09-09 09:28:46
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AIP Conference Proceedings [Author(s) 6TH INTERNATIONAL CONFERENCE ON PRODUCTION, ENERGY AND RELIABILITY 2018: World Engineering Science & Technology Congress (ESTCON) - Kuala Lumpur, Malaysia (13–14 August 2018)] - Characterization of tin oxide (SnO2) nanostructures prepared by thermal oxidation
摘要： Tin oxide (SnO2) nanocrystals and nanowires were successfully synthesized on Si (100) substrate by thermal oxidation method at different oxidation temperatures 450 oC, 500 oC and 550 oC. The synthesized nanostructures were characterized by FESEM, Uv-Vis and Photoluminescence spectrum. The morphology of the samples was confirmed by FESEM. Meanwhile, the optical properties were obtained from Uv-Vis and photoluminescence (PL) spectrum. Tin oxide nanowires were obtained at oxidation temperatures 500 oC with energy band gaps of 1.21 eV. PL emission spectra results showed that tin oxide nanowires at 500 oC exhibit first maximum peak at 450 nm (2.76 eV), second maximum peak at 500 nm excitation (2.48 eV) and third maximum highest peak at 650 nm excitation (1.91 eV). In this work, we investigate the right oxidation temperature to synthesize tin oxide nanowires. The structural and optical properties of the synthesized tin oxide thin film can be improve by oxidation temperature.
关键词： Photoluminescence,FESEM,nanowires,Tin oxide,thermal oxidation,Uv-Vis,SnO2,nanocrystals
更新于2025-09-09 09:28:46
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UV distributed Bragg reflectors build from porous silicon multilayers
摘要： UV Distributed Bragg reflectors were fabricated by a two-step thermal oxidation process over porous silicon multilayers (PS-ML), which were prepared by room-temperature electrochemical anodization of silicon wafers. The optical behavior of the PS-ML before and after oxidation was studied by reflectance measurements. It was observed an UV shift from 430 to 300 nm in the peak of the reflectance spectrum after oxidation of the PS-ML. This was attributed to the presence of silicon oxide over the surface of the silicon filaments. Such oxide also reduced the refractive index of each porous silicon monolayer. The bandgap of the PS-ML was calculated by the Kubelka-Munk approximation, which showed an increase in the bandgap from 3.11 to 4.36 eV after the thermal oxidation process. It was suggested that the observed optical response could opens the possibility of fabrication of UV optoelectronic devices based entirely in the silicon technology.
关键词： Porous silicon,thermal oxidation,multilayers,ultraviolet (UV)
更新于2025-09-09 09:28:46
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Synthesis of copper oxide nanowires with an emphasis on analyzing the effect of oxidation time on the growth of nanowires
摘要： Copper nanowires offers a wide variety of applications in domains like electronics, energy harvesting and heat transfer. Here, spherical copper has been thermally oxidized to produce nano-wired particles. The length and diameter of these CuO nanowires are in the range of approximately 3–15 μm and 100–300 nm respectively. SEM images of the oxidized copper particles were examined to understand the effect of oxidation time on the length and population density of the nanowire. Oxidation times were set from 15 min to 4 h. We report a direct relation between oxidation time and the population density of the nanowires. An increase in length of the wires was observed up to an oxidation time of 3 h, however, further increase in oxidation time did not signi?cantly contribute to an increased length of nanowires. XRD and TGA was performed to identify the phases of CuO and oxidation rate of Cu respectively.
关键词： thermal oxidation,copper nanowires,metal oxides,copper oxide nanowires
更新于2025-09-09 09:28:46