研究目的
to assess the effect of a MnO2 layer grown on the surface of GaAs on the kinetics and mechanism of the thermal oxidation of the semiconductor and the optical, electrical transport, and morphological characteristics of the resulting films.
研究成果
MnO2 significantly affects the thermal oxidation of GaAs, acting as an oxygen transfer agent and increasing the film growth rate. The resulting films have good dielectric properties and a regular grain structure, making them suitable for various applications.
研究不足
The study was limited to a specific temperature range (450-550°C) and did not explore higher temperatures due to the risk of substrate degradation and MnO2 deposit vaporization.
1：Experimental Design and Method Selection:
The study involved the thermal oxidation of MnO2/GaAs samples at various temperatures and times to assess the effect of MnO2 on the oxidation process.
2：Sample Selection and Data Sources:
(100)-oriented AGDTs single-crystal gallium arsenide wafers polished on both sides were used.
3：List of Experimental Equipment and Materials:
Equipment included a Covap II vacuum ion sputtering system for MnO2 layer growth, an LEF-754 single-wavelength laser ellipsometer, an Ellips-1891 ellipsometer, an MTP-2M-50-500 horizontal resistive furnace, an Empyrean diffractometer, and an NT-MDT Solver P47 Pro scanning probe microscope.
4：Experimental Procedures and Operational Workflow:
MnO2 layers were grown on GaAs by magnetron sputtering, followed by thermal oxidation at specified temperatures and times. The thickness and properties of the resulting films were then analyzed.
5：Data Analysis Methods:
The kinetic data were analyzed using a power law equation, and the phase composition was determined by X-ray diffraction.
独家科研数据包，助您复现前沿成果，加速创新突破
获取完整内容
