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Observation of heterostructure epitaxy of Pt-doped Ni-monosilicide on Si(001)
摘要： The objective of this study was to determine detailed microstructure of a Ni1–xPtxSi ?lm formed via a melting/quenching process using high temperature laser annealing on a Si(001) substrate. The orthorhombic Ni1–xPtxSi ?lm was found to be able to epitaxially grow with a crystallographic relationship of Ni1–xPtxSi[010]//Si[110], Ni1–xPtxSi(400)//Si(331), and Ni1–xPtxSi (104)//Si(004). Volume expansion of the Ni1–xPtxSi ?lm due to Pt incorporation was mainly accommodated by an increase in only one direction nearly parallel to the ?lm surface (lattice parameter a). This was explained by the minimum coherent strain at the Ni1–xPtxSi (104)/Si(004) interface with an epitaxial growth tendency. Atomic-scale scanning transmission electron microscopy analyses revealed that the interface of Ni1–xPtxSi/Si had a repetitive atomic-step feature with energetically favorable Ni1–xPtxSi(004) terraces and (400) structural ledges that could increase the coherent area. By generating an array of mis?t dislocations with an extra half plane of Ni1–xPtxSi(020), the elastic strain was further relieved.
关键词： Ni-silicide,Epitaxy,Thin ?lm,Structural ledges,Interface,Microstructure
更新于2025-09-10 09:29:36
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Handbook of Mechanics of Materials || Surface/Interface Stress and Thin Film Stress
摘要： Thin ?lm stress is critical for the reliability and electronic/optoelectronic properties of thin ?lm devices. In this chapter, we systematically discussed the effects of surface and interface stresses on the ?lm stress development during growth of polycrystalline ?lms at the initial and ?nal growth stage. We demonstrate that surface stress plays an important role at the initial stage of ?lm growth (island growth stage), and conventional stress analysis technology such as wafer curveture experiments may not be applicable at this stage. At the late stage of ?lm growth, we also show that adatom insertion into the grain boundaries is the primary mechanism of compressive stress development.
关键词： interface stress,Thin ?lm stress,adatom insertion,wafer curvature,grain boundaries,surface stress,polycrystalline ?lms
更新于2025-09-10 09:29:36
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Effects of source/drain-electrode material, thickness and fabrication method on the electrical performance of pentacene thin-film transistor
摘要： The e?ects of source/drain (S/D) electrode material (Ni, Pt and Pd) and deposition method (electron-beam evaporation and sputtering) on the performance of pentacene organic thin-?lm transistor (OTFT) are studied. Experimental results show that the OTFT with Pd S/D electrodes deposited by sputtering exhibits the best electrical performance. This should be due to the small charge-injection barrier at the pentacene/electrode interface and small thermal load generated during the metal deposition. Besides, through varying the Pd S/D electrode thickness, it is found that increasing the electrode thickness results in performance degradation due to degraded pentacene/electrode interface, which is caused by higher thermal stress developed during longer deposition time.
关键词： Organic thin-?lm transistor,Contact metal,Electrode thickness,Fabrication method
更新于2025-09-10 09:29:36
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A Review for Compact Model of Thin-Film Transistors (TFTs)
摘要： Thin-?lm transistors (TFTs) have grown into a huge industry due to their broad applications in display, radio-frequency identi?cation tags (RFID), logical calculation, etc. In order to bridge the gap between the fabrication process and the circuit design, compact model plays an indispensable role in the development and application of TFTs. The purpose of this review is to provide a theoretical description of compact models of TFTs with different active layers, such as polysilicon, amorphous silicon, organic and In-Ga-Zn-O (IGZO) semiconductors. Special attention is paid to the surface-potential-based compact models of silicon-based TFTs. With the understanding of both the charge transport characteristics and the requirement of TFTs in organic and IGZO TFTs, we have proposed the surface-potential-based compact models and the parameter extraction techniques. The proposed models can provide accurate circuit-level performance prediction and RFID circuit design, and pass the Gummel symmetry test (GST). Finally; the outlook on the compact models of TFTs is brie?y discussed.
关键词： thin-?lm transistors (TFTs),surface potential,compact model
更新于2025-09-09 09:28:46
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High-mobility material research for thin-film transistor with amorphous thallium–zinc–tin oxide semiconductor
摘要： The applicability of thallium–zinc–tin oxide (TlZnSnO) as a channel material for a thin-?lm transistor (TFT) was investigated by ?rst-principles simulation and cosputtering experiment with XZnSnO (X = Al, Ga or In). The electron effective mass (m*) of Tl0.4ZnSnO was simulated to be >0.153, which is much smaller than that of In0.4ZnSnO (0.246). An In0.4ZnSnO TFT exhibited a mobility (μ) of 32.0 cm2 V%1 s%1 in the experiment; therefore, the Tl0.4ZnSnO TFT was expected to have a higher mobility of approximately 50 cm2 V%1 s%1 following the relation (μ / 1/m*). Moreover, the Tl-related oxide semiconductor would provide better TFT stability because its oxide vacancy is more stable than that of an In-related oxide semiconductor.
关键词： first-principles simulation,thallium–zinc–tin oxide,mobility,cosputtering,electron effective mass,thin-?lm transistor
更新于2025-09-09 09:28:46
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[Lecture Notes in Computer Science] Neural Information Processing Volume 11307 (25th International Conference, ICONIP 2018, Siem Reap, Cambodia, December 13–16, 2018, Proceedings, Part VII) || Hopfield Neural Network with Double-Layer Amorphous Metal-Oxide Semiconductor Thin-Film Devices as Crosspoint-Type Synapse Elements and Working Confirmation of Letter Recognition
摘要： Arti?cial intelligences are essential concepts in smart societies, and neural networks are typical schemes that imitate human brains. However, the neural networks are conventionally realized using complicated software and high-performance hardware, and the machine size and power consumption are huge. On the other hand, neuromorphic systems are composed solely of optimized hardware, and the machine size and power consumption can be reduced. Therefore, we are investigating neuromorphic systems especially with amorphous metal-oxide semiconductor (AOS) thin-?lm devices. In this study, we have developed a Hop?eld neural network with double-layer AOS thin-?lm devices as crosspoint-type synapse elements. Here, we propose modi?ed Hebbian learning done locally without extra control circuits, where the conductance deterioration of the crosspoint-type synapse elements can be employed as synaptic plasticity. In order to validate the fundamental operation of the neuromorphic system, ?rst, double-layer AOS thin-?lm devices as crosspoint-type synapse elements are actually fabricated, and it is found that the electric current continuously decreases along the bias time. Next, a Hop?eld neural network is really assembled using a ?eld-programmable gate array (FPGA) chip and the double-layer AOS thin-?lm devices, and it is con?rmed that a necessary function of the letter recognition is obtained after learning process. Once the fundamental operations are con?rmed, more advanced functions will be obtained by scaling up the devices and circuits. Therefore, it is expected the neuromorphic systems can be three-dimensional (3D) large-scale integration (LSI) chip, the machine size can be compact, power consumption can be low, and various functions of human brains will be obtained. What has been developed in this study will be the sole solution to realize them.
关键词： Neural network,Hop?eld neural network,Letter recognition,Arti?cial intelligence,Crosspoint-type synapse elements,Double-layer amorphous metal-oxide semiconductor (AOS) thin-?lm device,Modi?ed hebbian learning
更新于2025-09-09 09:28:46
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Flexible TEG Using Amorphous InGaZnO Thin Film
摘要： We have demonstrated ?exible thermoelectric generators (TEGs) using transverse type structure with amorphous InGaZnO/Mo and amorphous InGaZnO/ITO materials. The amorphous-InGaZnO (a-IGZO) ?lm has advantages such as its low thermal conductivity and relatively high carrier mobility. Additionally, the a-IGZO ?lm can form on a ?exible substrate using a low temperature fabrication process. The a-IGZO thin ?lms were deposited at room temperature by RF magnetron sputtering on PEN substrate. The thin ?lm TEG can create a temperature difference in the in-plane lateral direction by using a heat guide. For the heat guide, polymer photoresist material (KMPR 1035) was spin-coated and patterned using the standard photolithography process. Metal masks were used for all the deposition steps. A total of 676 a-IGZO/metal paired cells were connected in series. Temperature difference was applied between the heat guide and the back side of the substrate, and it was con?rmed that both temperature difference and Seebeck voltage were generated in the IGZO cell. We have shown that the transparent and ?exible TEG on PEN substrate can be fabricated using a-IGZO with the standard fabrication process.
关键词： thin ?lm,TAOS,Thermoelectric generator,module
更新于2025-09-04 15:30:14
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Design and development of Binary Diffractive Germanium Lens by thin film deposition
摘要： The design and development of infrared (λ: [8]–[12] μm) binary diffractive germanium lens (BDGL) by two - steps thin ?lm deposition (Physical vapor deposition (PVD) technique) is presented. The optical design of the required elements using the optical design code Zemax, the design of the 4 steps binary surface and its required metallic masks using the programming language Delphi, the procedures of fabrication, and the measurement of the resulting pro?le, were presented. The comparison between the refractive/diffractive lenses by measuring the minimum resolvable temperature difference (MRTD) shows the advantages of binary diffractive surface.
关键词： binary surface,Diffractive,thin ?lm
更新于2025-09-04 15:30:14