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High performance phototransistors with organic/quantum dot composite materials channels
摘要： Nanomaterials, especially quantum dots, have become one of the most great potential channel transport layer materials in the field of photo detection mainly due to their particular light absorption characteristics. However, there are still many disadvantages such as low carrier transport capability possibly attributable to the discontinuity nature of materials. Therefore, particular phototransistors with pentacene/CdSe@ZnS QDs composite materials channels have been prepared by simply blending and spin-coating 6,13-Bis(triisopropylsilylethynyl)-pentacene (TIPS-pentacene) and QDs solution in weight ratio of 3:1. The particular device architecture with organic/quantum dot composite materials channels effectively combined the high carrier mobility advantage of organic semiconductors with the strong absorption characteristic of quantum dots in specific optical band regions and further overcame the low conductivity shortcomings of pure quantum dot materials. The device with particular pentacene/CdSe@ZnS QDs composite channel exhibited excellent electrical and optical properties with current switch ratio Ion/off of 104, carriers mobility of ~0.161 cm2/V, photosensitivity P of 105, responsivity R of 0.33 mA/W and detectivity D of 1.48 ? 1011 Jones at drain voltage of (cid:0) 35 V and light intensity of 1.6 mW/cm2, respectively, indicating that this composite, as one of the most promising channel transport layer material candidates for photodetector, provides one chance to improve the characteristic of photodetector transistors just by using hybrid channel technology.
关键词： Solution method,Quantum dots,Photodetectors,Composite materials,Organic thin film transistors
更新于2025-09-11 14:15:04
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Solution-processed Zn <sub/><i>x</i> </sub> Cd <sub/> 1- <i>x</i> </sub> S Buffer Layers for Vapor Transport Deposited SnS Thin-film Solar Cells: Achieving High Open-circuit Voltage
摘要： As an alternative buffer material to CdS, ZnxCd1-xS buffer layers for vapor-transport-deposited SnS thin-film solar cells (TFSCs) were fabricated using the successive ionic layer adsorption and reaction (SILAR) method. Varying the Zn-to-Cd ratio resulted in a series of ZnxCd1-xS thin films with controllable bandgaps in the range of 2.40–3.65 eV. The influence of the Zn-to-Cd ratio on the cell performance was investigated in detail. The Zn0.34Cd0.66S buffer layer was found to be the optimal composition for SnS TFSCs, and a record open-circuit voltage (Voc) of 0.405 V was achieved with an efficiency of 3.72%, while the SILAR-CdS buffer layer rendered a Voc of 0.324 V. The improvement in Voc when using the Zn0.34Cd0.66S buffer layer was corroborated by the spike-type conduction band offset of 0.35 eV with the SnS absorber, as revealed by X-ray photoelectron spectroscopy analysis. In addition, minimized interfacial recombination at the SnS/Zn0.34Cd0.66S heterojunction was confirmed by temperature-dependent Voc analysis under illuminated conditions.
关键词： open-circuit voltage,successive ionic layer adsorption and reaction,thin-film solar cells,Tin monosulfide,buffer layer,zinc cadmium sulfide
更新于2025-09-11 14:15:04
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Ab initio Calculations of Optoelectronic Properties of Antimony Sulfide nano-thin film for Solar Cell Applications
摘要： Antimony sulfide (Sb2S3) micro thin-film have been received great interest as an absorbing layer for solar cell technology. In this study, to explore its further potential, electronic and optical properties of Sb2S3 simulated nano-thin film are investigated by the first-principles approach. To do so, the highly accurate full-potential linearized augmented plane wave (FP-LAPW) method framed within density functional theory (DFT) as implemented in the WIEN2k package is employed. The films are simulated in the [001] direction using the supercell method with a vacuum along z-direction so that slab and periodic images can be treated independently. From our calculations, indirect band gap energy values of Sb2S3 for various slabs are found to be 0.568, 0.596 and 0.609 eV for 1, 2 and 4 slabs respectively. Moreover, optical properties comprising of real and imaginary parts of the complex dielectric function, absorption coefficient, refractive index are also investigated to understand the optical behavior of the obtained simulated Sb2S3 thin films. From the analysis of their optical properties, it is clearly seen that Sb2S3 thin films have good values for optical absorption parameters in the visible and ultraviolet wavelength range, showing the aptness of antimony sulphide thins films for versatile optoelectronic applications as a base material.
关键词： DFT,Solar cell,optical properties,Sb2S3,thin-film,LAPW
更新于2025-09-11 14:15:04
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3.6: High‐Reliability OLED Display Panel using Top Gate IGZO TFTs for 55inch UHD TVs
摘要： To improve electrical characteristics of top gate a-IGZO TFT we have been optimized the oxygen in IGZO layer and decreased the excess oxygen of Gate Insulator layer. We achieved that the uniformity of threshold voltages of a-IGZO TFTs on Gen. 8.5 glass is approximately 0.61V. Also, we achieved BTS characteristic about Δ0.1V at 2hr PBTS and Δ-0.2V at 2hr NBTiS. In addition, we demonstrated the 55-in 4K UHD OLED TV with high reliability Image sticking.
关键词： Thin Film Transistor,OLED Display,Oxide Semiconductor,Image Sticking
更新于2025-09-11 14:15:04
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Optical Properties of Co-doped ZnSe Thin Films Synthesized by Pulsed Laser Deposition
摘要： Effects of Co concentration on the properties of ZnSe:Co films were investigated. The amorphous and crystalline (ZnSe)1-x:Cox (x=0.1, 0.3, 0.5) thin films were grown on sapphire (Al2O3) substrates with temperature of 25°C and 800°C respectively by pulsed laser deposition. The X-ray diffraction analyses indicate that, with increasing Co concentration, the average grain size decrease whereas the microstrain and dislocation density increase. Meanwhile, the further investigation for crystalline thin films shows that the crystalline phase transform from single cubic zinc blende structure to a mixture structure containing a small amount of hexagonal wurtzite phase. The Raman spectra and X-ray photoelectron spectroscopy reveal that the Co atoms were incorporated into ZnSe lattice and the samples reached an overdoping state when the x value surpassed 0.3. With increasing Co concentration, the average transmittance of films decreased due to the Co impurities un-incorporating into ZnSe lattice. Meanwhile, the band gap Eg values of films increased from 3.17 eV to 3.50 eV for TS=25°C and from 2.86 eV to 3.34 eV for TS=800°C. The large Eg values with regard to that of undoped bulk ZnSe (~2.7eV) can be attributed to the Co doping and quantum confinement effect. Moreover, the refractive index of the films increased by improving Co concentration. The dispersion energy Ed, oscillator energy Eo, static refractive index n0, static dielectric constant ε0, oscillator strength So and oscillator wavelength λo are analyzed by a single oscillator model. All these parameters were found to be dependent upon the Co concentration in the (ZnSe)1-x:Cox thin films.
关键词： Thin film,(ZnSe)1-x:Cox,Optical properties,Structure,PLD
更新于2025-09-11 14:15:04
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Enhanced photovoltaic performance of solution-processed Sb2Se3 thin film solar cells by optimizing device structure
摘要： Thin-film solar cells have attracted worldwide attention due to their high efficiency and low cost. Antimony selenide (Sb2Se3) is a promising light absorption material candidate for thin-film solar cells due to its suitable band gap, abundance, low toxicity, and high chemical stability. Herein, we fabricate an Sb2Se3 thin film solar cell using a simple hydrazine solution process. By controlling the thickness of the photoactive layer and inserting a poly(3-hexylthiophene) hole-transporting layer, an Sb2Se3 solar cell with a power conversion efficiency of 2.45% was achieved.
关键词： hole-transporting layer,n-i-p structure,solution process,poly(3-hexylthiophene),antimony Selenide,thin film solar cell
更新于2025-09-11 14:15:04
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Monocrystalline Perovskite Wafer/Thin Film for Photovoltaic and Transistors Applications
摘要： High-purity monocrystalline silicon has a long history in development of photovoltaics and so far has dominated the modern computers with its profound implementations in transistors and chips. The success of silicon has shown that monocrystalline wafers/thin films of semiconducting materials which have superior electronic properties are good platform for these optoelectronic and electronic applications. Recently, the newly emerging semiconducting materials of halide perovskites (HPs) have attracted much attention owing to their continuing success in high-efficiency solar cells. Demonstrated optoelectronic properties of HPs indicate that it could be a promising alternative to the silicon-based semiconducting industry. While the prerequisite of high-efficiency device is the material accessibility of monocrystalline HPs (mono-HP), as can be learned from the lessons of monocrystalline silicon. Current HPs based technologies, in terms of research areas like solar cells, photodetectors, light-emitting diodes (LEDs), lasers and transistors, are bottlenecked in manufacturing the mono-HP wafer/thin film materials, hence lacking exciting results of mono-HP devices. The state-of-the-art optoelectronic HP based devices are exclusively built using polycrystalline thin films, which are limited in their performance due to issues such as grain boundary defects, large trap-density and inhomogeneous charge transport. However, these issues can be resolved by utilizing mono-HPs. In this review, we will manifest in-depth analyses and discussions on the potential of mono-HPs in photovoltaics and transistor applications, and present the remaining challenges as well as promising research strategies to provide direction for future programs.
关键词： thin film,monocrystalline perovskite wafer,halide perovskites,transistors,photovoltaics
更新于2025-09-11 14:15:04
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Ferroelectric/photoluminescence effect in Pr-doped (Bi0.5Na0.5)TiO3–BaTiO3 thin film fabricated by the pulsed laser deposition method
摘要： In this work, (100)-oriented Pr-doped (Bi0.5Na0.5)TiO3–BaTiO3 ferroelectric/photoluminescence film was fabricated on SrRuO3-electroded Pb(Mg1/3Nb2/3)O3–PbTiO3 single-crystal substrate. The phase structure, domain, ferroelectric, and photoluminescence performance were studied. Results indicated the Pr-BNBT thin film has pure phase structure, dense microstructure, and exhibited (100) orientation out of the plane. Well-defined ferroelectric hysteresis loop with the remanent polarization of ~ 18?μC/cm2 and obvious photoluminescence emission spectrum were obtained. Based on the piezoresponse force microscopy, the ferroelectric domain structure was characterized and the domain size was ~ 100?nm. The present ferroelectric/photoluminescence multifunctional thin film has potential for multifunctional MEMS actuator and optical devices.
关键词： Thin film,Pr-doped,Ferroelectric,Photoluminescence,Pulsed laser deposition
更新于2025-09-11 14:15:04
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Long-Term Behavior of Hydrogenated Amorphous Silicon Thin-Film Transistors Covered With Color Filters for Use in Optical Sensors
摘要： This work investigates the long-term behavior of photo thin-film transistors (TFTs) that are covered with color filters and based on hydrogenated amorphous silicon (a-Si:H) technology. Based on the electrical characteristics and the optical responses of these TFTs as measured under different stress conditions, a new method for driving a photo TFT with a negative gate-source voltage is proposed to suppress the degradation of the photocurrent. The effectiveness of the newly proposed method is verified using our previously developed white-light photocurrent gating (WPCG) structure, the measurement of photocurrents, and the established models of red, green, and blue photo TFTs. An accelerated lifetime test of the fabricated circuit was carried out at 70 ?C and under the illumination of ambient light for 504 hours, demonstrating that the proposed method improves the long-term reliability of optical sensors.
关键词： optical sensor,Hydrogenated amorphous silicon thin-film transistor,long-term reliability
更新于2025-09-11 14:15:04
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Solution-processed method for high-performance Cu2ZnSn(S,Se)4 thin film solar cells and its characteristics
摘要： Kesterite Cu2ZnSn(S,Se)4 (CZTSSe) has attracted much attention as an ideal absorber material for thin film solar cells. Solution deposition methods provide a crucial approach for lowering the fabricating price of CZTSSe based photovoltaic devices. Here, a low-cost and robust ethanol/thioglycolic acid/1-butylamine ternary solutions method was developed to fabricate the CZTSSe solar cells. Characterization was performed using XRD, Raman, and C–V, which showed that the material fabricated by this method expressed high-phase purity, suitable carrier concentration, and large depletion width, and those features are vital to high efficiency photovoltaic devices. Hence, based on this high quality CZTSSe absorbed layer, photovoltaic device with a power conversion efficiency (PCE) as high as 9.71% was achieved. The PCE can be further enhanced through passivating with alkali metal and optimizing the device fabrication conditions, making this method much promising for lowering the manufacturing cost of kesterite solar cells. Additionally, this approach is full of application prospect for other burgeoning photovoltaic absorber materials which could dramatically reduce the cost of solar electricity.
关键词： Thin film,CZTSSe,Kesterite,Solution process,Solar cells
更新于2025-09-11 14:15:04