研究目的
Investigating the long-term behavior of hydrogenated amorphous silicon thin-film transistors covered with color filters for use in optical sensors and proposing a new method for driving a photo TFT with a negative gate-source voltage to suppress the degradation of the photocurrent.
研究成果
The proposed method of driving photo TFTs with a negative gate-source voltage effectively suppresses the degradation of photocurrent, improving the long-term reliability of optical sensors under high-temperature stress and ambient light.
研究不足
The study focuses on a-Si:H TFTs covered with color filters and may not be directly applicable to other types of TFTs or optical sensors without further research.
1：Experimental Design and Method Selection:
The study involved measuring the electrical characteristics and optical responses of a-Si:H TFTs under different stress conditions to propose a new driving method.
2：Sample Selection and Data Sources:
Photo TFTs fabricated on glass substrates using the standard a-Si:H TFT process were used, with each covered with a red, green, or blue filter.
3：List of Experimental Equipment and Materials:
A Keithley 2612A source meter was used for measurements.
4：Experimental Procedures and Operational Workflow:
The study included measuring transfer characteristics and photocurrents under illumination, performing HSPICE simulation based on established TFT models, and conducting an accelerated lifetime test.
5：Data Analysis Methods:
The effectiveness of the proposed method was verified through simulation and measurement of photocurrents.
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