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24.5: Back-Channel-Etched a-IGZO TFTs with TiO <sub/>2</sub> :Nb Protective Layer
摘要： A back-channel-etched (BCE) process for the fabrication of a-IGZO TFTs is demonstrated, in which conductive TiO2:Nb (TNO) thin film is used to serve as protective layer for the a-IGZO active layer. TNO film could excellently protect a-IGZO due to its ultra-small surface roughness. With treatment by N2O plasma + 200°C annealing, the conductive TNO can be converted into an insulator to serve as an in situ passivation layer. Besides, the TNO in the source–drain (S-D) region remain conductive due to the protection of S-D electrodes, which could be proved by the XPS results. Compare with the conventional device without TNO protective layer, the S-D parasitic resistance (RSD) of devices with 1 nm and 5 nm TNO is significantly reduced. The positive bias stress stability is improved as well for the devices with TNO in situ passivation layer.
关键词： amorphous indium gallium zinc oxide (a-IGZO),Nb doped TiO2 (TNO),thin film transistors (TFTs),back-channel-etched (BCE) process
更新于2025-09-23 15:23:52
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The Implementation of Fundamental Digital Circuits With ITO-Stabilized ZnO TFTs for Transparent Electronics
摘要： In this paper, several fundamental pseudo-CMOS digital circuits with n-type indium tin oxide-stabilized ZnO thin-film transistors (TFTs) were implemented and investigated. The optical transmittance of circuits varied from 77% to 92% throughout the visible wavelength band. Electrically, the operation frequency of inverters, nor gates, nand gates, D latches, and D flip flops were all found to exceed 10 kHz with a supply voltage of 10 V. Besides, 13-stage ring oscillators could be operated at 42 kHz with a propagation delay time of 0.92 μs when the supply voltage was set as 20 V. Among the state-of-the-art transparent designs, these proposed circuits based on the ITO-stabilized ZnO TFTs exhibited high-speed performance, which were promising as building blocks for transparent electronics with moderate frequency requirements.
关键词： transparent electronics,Digital circuits,indium tin oxide-stabilized ZnO,thin-film transistors (TFTs),ring oscillator (RO)
更新于2025-09-23 15:22:29
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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
摘要： We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga-N bonds for low nitrogen-doping (N-doping), but additionally formed less stable In-N and Zn-N bonds for high N-doping. The stable Ga-N bonds and few defects made the variation in oxygen vacancy (VO) more difficult and hence achieved better stability of thin film transistors (TFTs) with low doped a-IGZO:N channel layers. Contrarily, the less stable In-N and Zn-N bonds as well as excess defects led to an easier change in VO and thus more unstable a-IGZO:N TFTs for high N-doping.
关键词： Amorphous InGaZnO (a-IGZO),Thin film transistors (TFTs),Nitrogen doping (N-doping),Chemical bonds
更新于2025-09-23 15:22:29
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Effects of yttrium doping on the electrical performances and stability of ZnO thin-film transistors
摘要： In this paper, we have investigated the effects of yttrium (Y) doping on the electrical performance and stability of ZnO thin film transistors (TFTs). Here, Y-doped ZnO TFTs were fabricated by using radio frequency magnetron sputtering at 150 °C. As a result, the 1% Y-doped ZnO TFT exhibits a small threshold voltage shifts of 2.5 V under positive bias stress and ?2.8 V under negative bias stress as well as desirable device performance with field effect mobility of 9.8 cm2/V s, a subthreshold swing of 320 mV/decade and on/off current ratio of 107, respectively. Based on the XPS analysis and electrical characterizations, the improvement in stability and electrical properties of ZnO TFTs were attributed to the appropriate Y doping concentration, which not only could control the carrier concentration and broaden the band gap of ZnO film, but also suppress the oxygen vacancy defects and passivate the trap density at the SiO2/ZnO interfaces. Consequently, the high stability and excellent electrical performances of Y-doped ZnO TFTs show great potential for use in flat panel displays.
关键词： Doping,Zinc oxide (ZnO),Thin film transistors (TFTs),Bias stress stability
更新于2025-09-23 15:22:29
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[IEEE 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - Atlanta, GA, USA (2019.7.7-2019.7.12)] 2019 IEEE International Symposium on Antennas and Propagation and USNC-URSI Radio Science Meeting - A Unit-Cell Discontinuous Galerkin Scheme for Analyzing Plasmonic Photomixers
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： zinc oxide,dc switch,Cutoff frequency,pulse measurements,gate charge,monolithic ICs,RF switch,ionic semiconductors,thin-film transistors (TFTs)
更新于2025-09-23 15:19:57
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[IEEE 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - Seoul, Korea (South) (2019.10.27-2019.11.2)] 2019 IEEE/CVF International Conference on Computer Vision (ICCV) - A Neural Network for Detailed Human Depth Estimation From a Single Image
摘要： Disordered ionic-bonded transition metal oxide thin-film transistors (TFTs) show promise for a variety of dc and RF switching applications, especially those that can leverage their low-temperature, substrate-agnostic process integration potential. In this paper, enhancement-mode zinc-oxide TFTs were fabricated and their switching performance evaluated. These TFTs exhibit the drain-current density of 0.6 A/mm and minimal frequency dispersion, as evidenced by dynamic current–voltage tests. A high-frequency power switch figure of merit RON QG of 359 mΩ · nC was experimentally determined for 0.75-μm long-channel devices, and through scaling 45.9 mΩ · nC is achievable for 11 V-rated devices (where RON is ON-state drain–source resistance, and QG is gate charge). An RF switch cutoff frequency fc of 25 GHz was measured for the same 0.75-μm TFT, whereas fc exceeding 500 GHz and power handling in the tens of watts are projected with optimization.
关键词： monolithic ICs,pulse measurements,zinc oxide,gate charge,dc switch,ionic semiconductors,RF switch,thin-film transistors (TFTs),Cutoff frequency
更新于2025-09-19 17:13:59
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Solution-Processed Oxide Complementary Inverter via Laser Annealing and Inkjet Printing
摘要： Metal–oxide–semiconductors (MOS) have become an ideal candidate for the next-generation optoelectronic device applications. However, high processing temperature and complicate processes are still tremendous challenge in developing solution-based complementary MOS (CMOS) inverter. In this article, for the first time, femtosecond (fs) laser was used to realize controllable annealing for solution-based CMOS inverter. The achievement of nonstoichiometric p-type oxide thin films was ascribed to the photo-assisted conversion of precursor to metal–oxide (M–O) lattices along with the formation of atom vacancies in oxide lattice due to carrier excitation and relaxation using laser annealing (LA). The field effect mobility of the p- and n-type M–O thin-film transistors (TFTs) with inkjet printing (IJP) and LA was 0.91 and 7.07 cm2/V·s, respectively. Moreover, location control capacity was exploited to separately anneal the p- and n-type oxide deposited with IJP for the fabrication of TFTs, which significantly simplified the fabrication process of the inverter. CMOS inverter with high noise margin and moderate voltage gain above 10 was also obtained. Our work significantly improved the ability to selectively manipulate the functionality and properties of the irradiated materials. The results demonstrated that logic gates based on all-oxide can be large area integrated using our strategy, exhibiting attractive properties and applications of the CMOS integrated circuits in oxide electronics.
关键词： p-type oxide semiconductor,inkjet printing (IJP),Complementary inverter,femtosecond (fs) laser annealing (LA),thin-film transistors (TFTs)
更新于2025-09-12 10:27:22
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Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated with Solution-Processed, Ultra-Thin AlxOy
摘要： Indium-gallium-zinc-oxide thin-film transistors (TFTs) gated with solution-processed, ultra-thin AlxOy have been fabricated on a plastic substrate. The effects of bending on the gate dielectric leakage current density and capacitance density have been studied. The devices show a low operating voltage of less than 1 V, a high current on/off ratio > 105 and a low subthreshold swing < 90 mV/dec. The devices maintain their high performance even when flexed to a curvature radius of 11 mm. As a result, such devices possess a great potential for low-power, flexible electronics.
关键词： 1 V operation,thin-film transistors (TFTs),plastic substrate,Indium-gallium-zinc-oxide
更新于2025-09-10 09:29:36
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A New High-Gain Operational Amplifier Using Transconductance-Enhancement Topology Integrated with Metal Oxide TFTs
摘要： This paper presents an integrated operational amplifier (OPAMP) consisting of only n-type metal oxide thin-film transistors (TFTs). In addition to using positive feedback in the input differential pair, a transconductance-enhancement topology is applied to improve the gain of the OPAMP. The OPAMP has a voltage gain (Av) of 29.54 dB over a 3 dB bandwidth (BW) of 9.33 kHz at a supply voltage of 15 V. The unity-gain frequency, phase margin and DC power consumption (PDC) are 180.2 kHz, 21.5°PM and 5.07 mW, respectively.
关键词： transconductance-enhancement topology,Operational amplifier,positive feedback,metal oxide thin-film transistors (TFTs)
更新于2025-09-09 09:28:46
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Back-Channel-Etched Thin-Film Transistors With Tunable Acid-Resistant Zr-Doped Indium Oxide Active Layer
摘要： In this paper, a tunable acid-resistant Zr-doped indium oxide (ZrInO) semiconductor material was developed. Detailed studies showed that the acid resistance of ZrInO thin films is tunable and increases with the increase in annealing temperature. Taking advantage of this special property, we successfully fabricated back-channel-etched (BCE) thin-film transistors (TFTs) based on the tunable acid-resistant ZrInO thin film. ZrInO-TFTs with BCE structure exhibited excellent electrical performance with a saturation mobility of 21.4 cm2V?1s?1, a subthreshold swing of 0.28 V/decade, and an on/off current ratio of 1.0 × 107. These results envision that the developed ZrInO semiconductor with tunable acid resistance has a good prospect for the channel layer of BCE-TFTs.
关键词： oxide semiconductor,Anodic Al2O3,tunable acid-resistant Zr-doped indium oxide (ZrInO),back-channel etch (BCE),thin-film transistors (TFTs)
更新于2025-09-09 09:28:46