- 标题
- 摘要
- 关键词
- 实验方案
- 产品
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Gate Conduction Mechanisms and Lifetime Modeling of p-Gate AlGaN/GaN High-Electron-Mobility Transistors
摘要： The gate conduction mechanisms in p-gallium nitride (GaN)/AlGaN/GaN enhancement mode transistors are investigated using temperature-dependent dc gate current measurements. In each of the different gate voltage regions, a physical model is proposed and compared to experiment. At negative gate bias, Poole–Frenkel emission (PFE) occurs within the passivation dielectric from gate to source. At positive gate bias, the p-GaN/AlGaN/GaN “p-i-n” diode is in forward operation mode, and the gate current is limited by hole supply at the Schottky contact. At low gate voltages, the current is governed by thermionic emission with Schottky barrier lowering in dislocation lines. Increasing the gate voltage and temperature results in thermally assisted tunneling (TAT) across the same barrier. An improved gate process reduces the gate current in the positive gate bias region and eliminates the onset of TAT. However, at high positive gate bias, a sharp increase in current is observed originating from PFE at the metal/p-GaN interface. Using the extracted conduction mechanisms for both devices, accurate lifetime models are constructed. The device fabricated with the novel gate process exhibits a maximum gate voltage of 7.2 V at t1% = 10 years.
关键词： time-dependent breakdown (TDB),p-GaN gate,high-electron-mobility transistor (HEMT),enhancement mode,gallium nitride (GaN),Conduction mechanism
更新于2025-09-23 15:21:21
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Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI
摘要： A comprehensive study on buffer vertical leakage mechanism and buffer reliability of 200-mm GaN-on-SOI is conducted in this paper. The buffer vertical leakage current versus bias is found to sequentially comprise three ranges of low-field leakage, variable-range hopping, and breakdown. The low-field leakage increase at high temperatures has been proven to be dominated by surface leakage. The stressing voltages of buffer time-dependent breakdown (TDB) measurements have a significant impact on shape factor β. Stress-induced leakage current is observed in the wear-out phase of the TDB curves. Stress-and-sense measurements in this phase indicate that defects are generated probably around the threading dislocations, where more localized Joule heating and more defects are created by a positive feedback, and finally, the buffer breaks down due to thermal runway. At last, based on the Weibull plot and E-model, the operating voltage is extrapolated to be 470 V corresponding to an expected lifetime of 10 years at 175 °C, with area scaling to the drain terminal of a 150-mm power transistor and failures scaling to 0.01%. The qualification of GaN-on-SOI is crucial for future 200-V GaN power integrated circuit on this platform.
关键词： GaN-on-SOI,time-dependent breakdown (TDB),leakage mechanism,Buffer reliability
更新于2025-09-10 09:29:36