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Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO <sub/>2</sub> -Based Thin-Film Transistor Devices
摘要： A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films at low temperatures down to 60 °C employing tetrakis-(dimethylamino)propyl tin(IV) [Sn(DMP)4] and oxygen plasma is demonstrated. The liquid precursor has been synthesized and thoroughly characterized with thermogravimetric analyses, revealing sufficient volatility and long-term thermal stability. [Sn(DMP)4] demonstrates typical saturation behavior and constant growth rates of 0.27 or 0.42 ? cycle?1 at 150 and 60 °C, respectively, in PEALD experiments. Within the ALD regime, the films are smooth, uniform, and of high purity. On the basis of these promising features, the PEALD process was optimized wherein a 6 nm thick tin oxide channel material layer deposited at 60 °C was applied in bottom-contact bottom-gate thin-film transistors, showing a remarkable on/off ratio of 107 and field-effect mobility of ≈ 12 cm2 V?1 s?1 for the as-deposited thin films deposited at such low temperatures.
关键词： thin-film transistors,tin(IV) oxide,thin films,precursors,atomic layer deposition
更新于2025-09-23 15:23:52
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Improved perovskite solar cell with 2H–TaS2 nanosheets as an electron transport layer using microwave irradiation
摘要： In addition to the absorber ingredient of the perovskite, electron- and hole-transport materials deposited on each side of a perovskite active layer can play essential roles in the stability and overall power conversion efficiency (PCE) of a device. Herein, we developed and used a novel, stable, and efficient electron transport layer (ETL) as a Tantalum (IV) sulfide (2H-TaS2) nanosheets for perovskite solar cells (PSCs) which up to now not investigated in PSC. Synthesis of 2H-TaS2 transparent thin films was performed directly on the fluorine-doped tin oxide (FTO) substrate, using microwave irradiation. The electrical characteristics of 2H-TaS2 thin film with state-of-the-art efficient electron transporting materials such as SnO2 and TiO2 are measured and compared. Device structure based on 2H-TaS2 in our work being: Glass/FTO/2H-TaS2/perovskite/P3HT/Gold, indicate power photoelectric conversion efficiency (PCE) of 15.23% which is close to the obtained PCEs of compact SnO2 and TiO2 electron transport layer based PSCs. The results showed, high electrical conductivity, the better property of charge transfer, and good transparency layer in the visible region (400-900 nm) with 2H-TaS2 thin film. So, theses reasons included a process of low-temperature synthesis, beneficial for energy harvesting and other optoelectronic applications for 2H-TaS2 thin film.
关键词： Perovskite solar cells,Tantalum (IV) sulfide,Tin (IV) Oxide,Titanium dioxide
更新于2025-09-19 17:13:59