研究目的
To develop a low-temperature plasma-enhanced atomic layer deposition (PEALD) process for tin(IV) oxide (SnO2) thin films using a new precursor and evaluate their application in thin-film transistors (TFTs).
研究成果
The [Sn(DMP)4] precursor enables low-temperature PEALD of high-purity SnO2 thin films with excellent electrical properties in TFTs, showing high on/off ratios and mobilities without post-annealing. This makes it suitable for flexible electronics, with potential for sensing applications.
研究不足
The study is limited to specific precursor and plasma conditions; lower deposition temperatures result in higher hydrogen content and hydroxyl groups, which may affect electrical properties. The process may not be directly applicable to all substrate types without optimization.
1：Experimental Design and Method Selection:
The study employed a custom-built PEALD reactor for depositing SnO2 thin films using [Sn(DMP)4] precursor and oxygen plasma. The process was optimized by varying temperature, pulse times, and plasma parameters to achieve ALD characteristics such as saturation behavior and linear growth.
2：Sample Selection and Data Sources:
p-Type Si(100) wafers and quartz glass substrates were used for depositions. Samples were characterized using techniques like XRR, GI-XRD, AFM, RBS, NRA, NRRA, UV/vis spectroscopy, XPS, and electrical measurements for TFTs.
3：List of Experimental Equipment and Materials:
Key equipment includes a custom-built PEALD reactor, Bruker Avance DPX 250 NMR spectrometer, Seiko TG/DTA 6200 analyzer, Bruker AXS-D8 Discover diffractometer, JPK NanoWizard II Ultra AFM, Agilent Cary 5000 UV/vis spectrometer, X'Pert PanAnalytical diffractometer, and Agilent 4156B semiconductor parameter analyzer. Materials include [Sn(DMP)4] precursor, oxygen and argon gases, and various substrates.
4：Experimental Procedures and Operational Workflow:
The precursor was synthesized and characterized. PEALD depositions were performed at temperatures from 60 to 220 °C with optimized pulse/purge sequences. Films were analyzed for thickness, composition, structure, morphology, and optical/electrical properties. TFTs were fabricated and characterized.
5：Data Analysis Methods:
Data were analyzed using software like SIMNRA for RBS/NRA, Gwyddion for AFM, and Origin for XPS deconvolution. Electrical parameters were calculated using standard equations for TFT performance.
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Bruker Avance DPX 250
DPX 250
Bruker Corporation
Used for recording NMR spectra to characterize the precursor.
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Bruker AXS-D8 Discover
D8 Discover
Bruker Corporation
Used for X-ray reflectivity measurements to determine thin-film thickness and density.
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X'Pert PanAnalytical diffractometer
X'Pert PanAnalytical
PanAnalytical
Used for grazing incidence X-ray diffraction to analyze film crystallinity.
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Cary 5000 UV/vis spectrometer
Cary 5000
Agilent Technologies
Used for ultraviolet/visible transmittance and absorbance measurements to study optical properties.
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Agilent 4156B
4156B
Agilent
Used as a semiconductor parameter analyzer to characterize TFT electrical properties.
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Seiko TG/DTA 6200
TG/DTA 6200/SII
Seiko
Used for thermogravimetric analysis to evaluate precursor volatility and stability.
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JPK NanoWizard II Ultra
NanoWizard II Ultra
JPK Instruments
Used for atomic force microscopy to measure film morphology and roughness.
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NSC-15 cantilever
NSC-15
MikroMasch
Used with AFM for imaging; rectangular silicon cantilever.
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