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Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film
摘要： In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10?4 ?/cm), carrier concentration (4.1 × 1021 cm?3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm?3) with a high figure of merit (81.1 × 10?3 ??1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.
关键词： indium tin oxide (ITO),transparent conducting oxide (TCO),magnetron sputtering,oxide-related compound
更新于2025-09-09 09:28:46
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Studies on zinc oxide thin films by chemical spray pyrolysis technique
摘要： Zinc oxide (ZnO) thin films were deposited by chemical spray pyrolysis (CSP) technique using zinc acetate dihydrate solutions on microscopic glass substrates by varying the precursor concentration. The prepared films were characterized structurally and optically, using the powder X-ray diffraction (XRD) and UV analysis and Photoluminescence analysis. Crystallographic properties were analyzed through powder XRD. The XRD patterns shows a hexagonal structure with c-axis orientation (0 0 2) on self texturing phenomenon. Optical transmittance properties of the optimized ZnO thin films were investigated by using UV-Vis spectroscopy. The optical studies predicated a maximum transmittance in the range of above 70% with direct band gap values in the range of 2.9 to 3.2eV for the zinc oxide thin films. Under excitation of 300 nm radiations, sharp deep level emission peak at 2.506 eV dominates the photoluminescence spectra with weak deep level and near band edge emission peak at 3.026 and 3.427 eV respectively.
关键词： Photoluminescence,Transparent conducting oxide (TCO),UV-Vis,Zinc Oxide thin film,CSP technique,X-ray diffraction (XRD)
更新于2025-09-09 09:28:46