研究目的
Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film
研究成果
The Ti-doped ITO thin films exhibited superior optoelectronic characteristics at a substrate temperature of 400 °C, with advantageous resistivity, carrier concentration, and carrier mobility. The pronounced contribution of Ti doping indicates high suitability for application in optoelectronic devices.
研究不足
The study is limited to the effects of substrate temperature on the properties of Ti-doped ITO thin films. The potential effects of other fabrication parameters or doping concentrations were not explored.
1：Experimental Design and Method Selection:
Direct-current magnetron sputtering was used to fabricate Ti-doped ITO thin films with a fixed sputtering power at 100 W and varying substrate temperatures from room temperature to 500 °C.
2：Sample Selection and Data Sources:
Ti-doped ITO thin films with a thickness of 350 nm were produced on optical EAGLE XG glass substrates.
3：List of Experimental Equipment and Materials:
A direct-current magnetron sputtering system, ultraviolet/VIS/NIR spectrophotometer, Hall measurement system, X-ray diffraction (XRD), and atomic force microscope (AFM) were used.
4：Experimental Procedures and Operational Workflow:
The thin films were deposited at various substrate temperatures, and their optical, electrical, and structural properties were measured.
5：Data Analysis Methods:
The optical properties were measured using a spectrophotometer, electrical properties using a Hall measurement system, and structural properties using XRD and AFM.
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