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Study of the relationship between metal-assisted chemical etching and direction of the applied electric field
摘要： Metal-assisted chemical etching (MACE) has been proposed as a promising alternative for the fabrication of micro/nano-structures on silicon with simple process and low cost. Electric field can be applied during the reaction to control the motion of charged particles so as to accelerate the reaction and form uniform vertical trenches with high aspect ratio. In this paper, boron doped p-type (100) silicon wafers with resistivity of 20～30 Ω·cm was used as substrates. After coated with layers of 5 nm Ti and 10 nm Au, the silicon substrate was immersed into the etchant containing hydrofluoric acid (HF) and hydrogen peroxide (H2O2) with high HF-to-H2O2 concentration ratio (ρ) and an applied voltage of 40 volts. It was found that the direction of the applied electric field had a great influence on morphologies of the trenches. Deeper trenches with vertical sidewalls and relatively smoother bottom were observed when silicon substrate was connected to cathode of the power supply. Possible interpretation to these phenomena was proposed, and the effect of the electric field intensity and doping concentration was further studied.
关键词： trench morphology,metal-assisted chemical etching,electric field,HF-to-H2O2 ratio,electrode connection
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Kyoto, Japan (2018.6.21-2018.6.22)] 2018 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) - Study on Threshold Voltage Hysteresis in GaN-Based Vertical Trench MOSFETs
摘要： In this paper, we studied hysteresis in transfer characteristics of GaN-based vertical trench MOSFETs fabricated using different process technologies for n+-GaN source layer. It was found that the device with epitaxially-grown source region can suppress hysteresis in the transfer characteristics compared to that with implanted source region.
关键词： ion implantation,threshold voltage,epitaxial growth,hysteresis,GaN,trench,MOSFET
更新于2025-09-23 15:22:29
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Thermal analysis and optimization of air trench structures for thermally tunable devices
摘要： Thermally tunable devices are important building blocks of photonic integrated circuits for optical fiber communication and sensing applications. To increase their tuning efficiency, an air trench structure has been introduced to the devices. By using finite element method, the distributions of temperature, stress and displacement of the waveguide are studied. After optimization, under the temperature rise of 70 oC, the maximum values of temperature difference, stress and displacement are smaller than 10% of the temperature rise, allowable stress and 0.002% of the waveguide length, respectively. This optimized air trench structure is desired for thermally tunable devices reaching low power consumption, high temperature uniformity and mechanical stability.
关键词： thermal analysis,air trench structure,thermally tunable device
更新于2025-09-23 15:22:29
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[IEEE 2018 3rd International Conference On Internet of Things: Smart Innovation and Usages (IoT-SIU) - Bhimtal, India (2018.2.23-2018.2.24)] 2018 3rd International Conference On Internet of Things: Smart Innovation and Usages (IoT-SIU) - A 100 V Lateral Trench Power MOSFET on InGaAs/InP
摘要： In this paper, we present a lateral-trench metal-oxide-semiconductor field-effect transistor (LT-MOSFET) on high mobility InGaAs material. The proposed LT-MOSFET emerged with trench technology consist a gate electrode placed vertically in a trench on the left end of the p-body region. The trench in the drift region introduce a RESURF effect to reduces the electric field and improves the device breakdown voltage. By 2-D numerical simulation, LT-MOSFET exhibits 2.4 times improvement on breakdown voltage with 3.3 times high figure-of-merit in comparison with the conventional-lateral MOSFET (CLMOSFET) for identical cell pitch and gate length.
关键词： figure of merit,breakdown voltage,lateral-trench,InGaAs
更新于2025-09-23 15:21:21
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[IEEE 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Huangshan, China (2019.8.5-2019.8.8)] 2019 18th International Conference on Optical Communications and Networks (ICOCN) - Bend performance of single trench large mode area fiber with step-index core
摘要： Bend performance of a single trench large mode area fiber with a step-index core is investigated. The introduced step-index core distribution of the fundamental mode. Numerical results demonstrate the designed fiber can achieve a high loss ratio (as high as 886) at the wavelength of 2 μm when the bend radius is only 10 cm.
关键词： step-index core,large mode area fiber,single trench,bend
更新于2025-09-16 10:30:52
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Thermal Management of GaN-on-Si High Electron Mobility Transistor by Copper Filled Micro-Trench Structure
摘要： Self-heating effect is a major limitation in achieving the full performance potential of high power GaN power devices. In this work, we reported a micro-trench structure fabricated on the silicon substrate of an AlGaN/GaN high electron mobility transistor (HEMT) via deep reactive ion etching, which was subsequently filled with high thermal conductive material, copper using the electroplating process. From the current-voltage characteristics, the saturation drain current was improved by approximately 17% with the copper filled micro-trench structure due to efficient heat dissipation. The iDS difference between the pulse and DC bias measurement was about 21% at high bias VDS due to the self-heating effect. In contrast, the difference was reduced to approximately 8% for the devices with the implementation of the proposed structure. Using Micro-Raman thermometry, we showed that temperature near the drain edge of the channel can be lowered by approximately ~22 °C in a HEMT operating at ~10.6 Wmm?1 after the implementation of the trench structure. An effective method for the improvement of thermal management to enhance the performance of GaN-on-Silicon HEMTs was demonstrated.
关键词： thermal management,high electron mobility transistor,self-heating effect,copper filled micro-trench,GaN-on-Si
更新于2025-09-16 10:30:52
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[IEEE 2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition - Warsaw (2017.9.10-2017.9.13)] 2017 21st European Microelectronics and Packaging Conference (EMPC) & Exhibition - High voltage WireLED powered directly by mains 230 Volts
摘要： for the need of energy saving, LEDs are taking more and more space in lighting modules. Moreover, LEDs add several applications to the lighting function, smartness, dimming, bio photonic applications, a lot of fields that none former light sources could reach [1]. The manufacturers of course must keep the target of making a device compatible with the standards in terms of safety first, but moreover the compactness and reliability with the well-known thermal issues, depending on the wall plug efficiency of the component. In order to manage all the mentioned points, as often, packaging is the key point if one seeks to maximize the lifetime of a LED based luminaire. Indeed, because they are aware of the existing technologies and comparison thanks to quick information available on the Internet, today’s customers cannot accept to pay a more expensive light source that have lower performance than the former lighting technologies [2]. The paper that we propose describes the manufacturing and the packaging of a LED device made from GaN micro wires compatible with direct mains powering on the 230 Volts-50 Hz network. We show why the heterogeneous stack to manufacture the lighting device, coupled with the high voltage input is a big challenge. Once the front side wire LEDs patterning is finished, many technological steps remain in order to deliver a WLP assembly ready for the back-end assembly process. The carrier bonding, the back side processing for N and P contacts patterning, the hybridization by flip chip technology using copper bumps or solder balls are roughly described with the related issues. Final thermal and electrical characterizations were conducted to evaluate the performances of the high voltage LED device.
关键词： High voltage,Packaging,Bump,WireLED,IMS,Flip Chip,Trench
更新于2025-09-12 10:27:22
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Light transmission and internal scattering in pulsed laser-etched partially-transparent silicon wafers
摘要： Continuing trend in silicon wafer thickness directed at cost reduction approaches basic boundaries created by: (a) mismatch between Al paste and Si wafer thermal expansion and (b) incomplete optical absorption. With its symmetrical front and back electrical contacts, the bifacial solar cell setup reduces stress due to mismatch thermal expansion, decreases metal use and increases high temperature efficiency. Efficiency improvement is accomplished in bifacial solar cells by capturing light from the back surface. Partially transparent wafers provide an option to improve near-infrared radiation absorption within Si wafer. To fully absorb optical radiation, three-dimensional texture of these kinds of wafers is essential. Pulsed laser interactions, thermal oxidation, and wet chemical etching are included in this research. A feature of its energy and pattern setup is the interaction of pulsed laser with Si, running at 1.064 μm wavelength and micro-second length. Two experimental settings were explored: (a) post-laser chemical etching with potassium hydro-oxide etching with thermal oxide as etching mask and (b) post-laser heat Si surface oxidation. Due to fast melting and recrystallization, laser pulsed processing inherently produces its own texture. Some of these spherically-shaped, randomly focused characteristics improve inner scattering and boost near-infrared absorption within the wafer. These characteristics are separated during chemical etching with the thermally-grown oxide layer as an etch mask. Comparison of optical absorption in both surfaces shows almost a rise in the magnitude of absorption in non-etched surfaces. Detailed optical (optical microscope and IR absorption), morphological (field emission scanning electron microscope) and heat imaging (far IR camera) analyses were performed to comprehend physical processes that contribute to near-IR absorption improvement. Such kinds of partially-transparent, three-dimensional textured Si wafers are anticipated to discover applications for bifacial solar cells as substrates.
关键词： Thru-holes,Optics,Silicon wafer,Materials physics,Thermal image,Partial transparent,Nanotechnology,Trench,Energy,IR transmission,Materials characterization
更新于2025-09-11 14:15:04
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A monitoring device made of an anodic aluminum oxide template for plasma-induced charging potential measurements in the high-aspect-ratio trench structure
摘要： A monitoring device is proposed to investigate the charge accumulation effects in a high-aspect-ratio trench structure. This monitoring device is made of an anodic aluminum oxide (AAO) template, which is a self-organized material with parallel pores, to demonstrate a high aspect ratio trench structure. A top electrode and bottom electrode were formed in the AAO contact structure for measuring electric potentials. These electrodes can be assumed to be electrically floating due to the very high input resistance of the measurement circuit. Therefore, the electric potentials resulting from the charge accumulation can be measured. In this paper, the fabrication process of the proposed device and experimental demonstrations are presented.
关键词： high-aspect-ratio trench structure,charge accumulation,monitoring device,anodic aluminum oxide,plasma-induced charging potential
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Analysis of 1.2 kV 4H-SiC Trench-Gate MOSFETs with Thick Trench Bottom Oxide
摘要： The 1.2 kV-rated trench-gate SiC power MOSFET with thick trench bottom oxide is analyzed and compared with previous trench-gate SiC power MOSFET structures. Speci?c on-resistance (Ron,sp), breakdown voltage (BV), threshold voltage (VT H ), gate-drain capacitance (Cgd,sp) and gate charge (Qgd) were extracted using numerical simulations for trench bottom oxide thickness between 500 ?A and 8000 ?A. It was found that the electric ?eld in the trench bottom oxide was below 4 MV/cm for oxide thickness beyond 4000 ?A. An analytical model is proposed to allow estimation of the electric ?eld in the trench bottom oxide. The Ron,sp for the thick bottom oxide structure was 1.9 m? ? cm2 (at Vgs of 20 V), Cgd,sp (at Vds= 1000 V) was 417 pF/cm2 and Qgd,sp (at Vgs =20 V, Rg=10 ?, Vds=800V) was 671 nC/cm2, which is signi?cantly better than most planar-gate devices. This structure has superior speci?c on-resistance compared with previous trench-gate and planar-gate structures.
关键词： Silicon Carbide,reverse transfer capacitance,speci?c on-resistance,gate charge,trench bottom oxide,breakdown voltage,threshold voltage,Trench-gate MOSFET (UMOSFET)
更新于2025-09-04 15:30:14