研究目的
To present a lateral-trench metal-oxide-semiconductor field-effect transistor (LT-MOSFET) on high mobility InGaAs material and evaluate its performance in comparison with conventional-lateral MOSFET (CLMOSFET).
研究成果
The LT-MOSFET demonstrates a 2.4 times improvement in breakdown voltage and a 3.3 times higher figure-of-merit compared to CLMOSFET, making it suitable for microwave power integrated circuits.
研究不足
The ON-resistance of LT-MOSFET is higher compared to CLMOSFET due to the trench structure increasing the drift region length.
1：Experimental Design and Method Selection:
The study employs trench technology in the design of LT-MOSFET to improve breakdown voltage through RESURF effect.
2：Sample Selection and Data Sources:
In
3：53Ga47As with InP substrate is used for both CLMOSFET and LT-MOSFET structures. List of Experimental Equipment and Materials:
Two-dimensional device simulator Silvaco ATLAS is used for simulation.
4：Experimental Procedures and Operational Workflow:
Device structures are designed and performance parameters are evaluated through numerical simulation.
5：Data Analysis Methods:
Performance parameters such as breakdown voltage and figure-of-merit are analyzed.
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