Two-Color Photodetector for the Visible Spectral Range Based on ZnSe/ZnS/GaAs Bragg Reflector

摘要： Effect of the ZnSe/ZnS/GaAs distributed Bragg reflector (DBR) on the parameters of the spectral response of a photodiode based on rectifying contacts in the metal–semiconductor–metal (MSM) system is studied. The calculated photoreflection spectra of the ZnSe/ZnS/GaAs heterostructure are in good agreement with the experimental data. It is shown that the MSM diode provides two-color response of the photodetector at wavelengths of 420 and 472 nm, a sharp decrease in the photosensitivity in the long-wavelength part of the response signal, high quantum efficiency (53%), and low dark current (5 × 10–10 A). It is demonstrated that the narrow-band two-color response of the detector can be tuned to the desired wavelength using appropriate selection of the parameters of the heterostructure that forms that Bragg reflector.