研究目的
Studying the effect of the ZnSe/ZnS/GaAs distributed Bragg reflector on the spectral response parameters of a photodiode based on rectifying contacts in the metal–semiconductor–metal system.
研究成果
The MSM detector with DBR based on the ZnSe/ZnS periodic heterostructure provides narrow-band two-color response with photosensitivity peaks at wavelengths of 420 and 472 nm, high quantum efficiency (53%), and low dark current (5 × 10–10 A). The response can be tuned by adjusting the heterostructure parameters.
研究不足
The study is limited to the visible spectral range and specific materials (ZnSe/ZnS/GaAs). The performance of the photodetector is dependent on the precise control of the heterostructure parameters.
1：Experimental Design and Method Selection:
The study involves the fabrication and analysis of MSM photodiode structures based on ZnSe/ZnS periodic nanosized heterostructures forming a DBR. The MOVPE method is used for growing the DBR.
2：Sample Selection and Data Sources:
The samples are grown on semi-insulating (100) GaAs substrates using diethylzinc, dimethylselenide, and diethylsulfide as reagents.
3：List of Experimental Equipment and Materials:
AIST-NT SmartSPM AFM for surface quality monitoring, horizontal quartz reactor for deposition.
4：Experimental Procedures and Operational Workflow:
Deposition is performed at a hydrogen pressure close to atmospheric pressure and a temperature of 450°С. Contact photolithography is used to form interdigitated contacts of the MSM detector.
5：Data Analysis Methods:
The method of 2 × 2 matrices is used for calculating the reflection spectrum of the multilayer heteroepitaxial structure.
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