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Structural and Optical Properties of Zn <sub/>1‐</sub><i> <sub/>x</sub></i> Mg <i> <sub/>x</sub></i> O Prepared by Calcination of ZnO + Mg(OH) <sub/>2</sub> after Hydro Micro Mechanical Activation
摘要： Zn1-xMgxO microcrystals are produced in the 0.15 (cid:2) x (cid:2) 1 composition range by calcination of ZnO + Mg(OH)2 after hydro micro mechanical activation according to the patent WO2018065735A1. The structural properties of the samples have revealed the cohabitation of wurtzite and rock-salt phases for x values ranging from 0.15 up to 0.6 with a clear increase of the proportion of cubic phase with x. A single cubic phase is observed in the range 0.66 (cid:2) x < 1. From the purity of these samples produced at very low cost, it is expected that they will be used as precursors for growth of advanced light emitters integrated into an already existing process as they exhibit exceptionally e?cient (and robust with T) light emission in the ultraviolet region.
关键词： optical properties,oxides,ultraviolet emission,wide bandgap semiconductors
更新于2025-09-23 15:19:57
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Temperature-dependent electrical properties of <i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes on highly doped single-crystal substrates
摘要： Beta-phase gallium oxide (β-Ga2O3) Schottky barrier diodes were fabricated on highly doped single-crystal substrates, where their temperature-dependent electrical properties were comprehensively investigated by forward and reverse current density – voltage and capacitance – voltage characterization. Both the Schottky barrier height and the ideality factor showed a temperature-dependence behavior, revealing the inhomogeneous nature of the Schottky barrier interface caused by the interfacial defects. With a voltage-dependent Schottky barrier incorporated into thermionic emission theory, the inhomogeneous barrier model can be further examined. Furthermore, the reverse leakage current was found to be dominated by the bulk leakage currents due to the good material and surface quality. Leakage current per distance was also obtained. These results can serve as important references for designing efficient β-Ga2O3 electronic and optoelectronic devices on highly doped substrates or epitaxial layers.
关键词： power electronics,Schottky barrier diode,wide bandgap material,gallium oxide
更新于2025-09-19 17:15:36
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Progress of power field effect transistor based on ultra-wide bandgap Ga <sub/>2</sub> O <sub/>3</sub> semiconductor material
摘要： As a promising ultra-wide bandgap semiconductor, gallium oxide (Ga2O3) has attracted increasing attention in recent years. The high theoretical breakdown electrical field (8 MV/cm), ultra-wide bandgap (~ 4.8 eV) and large Baliga’s figure of merit (BFOM) of Ga2O3 make it a potential candidate material for next generation high-power electronics, including diode and field effect transistor (FET). In this paper, we introduce the basic physical properties of Ga2O3 single crystal, and review the recent research process of Ga2O3 based field effect transistors. Furthermore, various structures of FETs have been summarized and compared, and the potential of Ga2O3 is preliminary revealed. Finally, the prospect of the Ga2O3 based FET for power electronics application is analyzed.
关键词： ultra-wide bandgap semiconductor,field effect transistor (FET),power device,gallium oxide (Ga2O3)
更新于2025-09-19 17:15:36
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Synthesis and structural characterization of microcrystalline Ga2S3 layers on a GaP semiconductor substrate
摘要： Gallium sulfide (Ga2S3) belongs to a group of wide bandgap semiconductors with interesting properties for infrared and nonlinear optics applications. Recent interest in Ga2S3 material focuses on the passivation of various semiconductor surfaces to enhance their electrical and optical properties. This work concerns the growth of microcrystalline gallium sulfide layers on semiconductive GaP substrates. The Ga2S3 layers were successfully obtained by reacting sulfur vapour with thin GaP semiconductor plates at two different temperatures: 450 °C and 600 °C. At the lower temperature (400 °C), no gallium sulfide layer formation was observed on the GaP substrate. Atomic force microscopy and Scanning Electron Microscopy were applied to illustrate the topography of the obtained Ga2S3 layers. Their thickness ranged from a few hundred nanometers to about 1–2 μm. The synthesized layers were structurally characterized by Raman spectroscopy. Raman polarization measurements were used to determine the crystalline phase of the Ga2S3 films. Raman tensor coefficients were obtained by fitting the most intensive Ga2S3 peaks to experimental data. The symmetry of the Raman peaks was in good agreement with the monoclinic Ga2S3 crystal phase.
关键词： Ga2S3 layers,Raman polarization measurements,Gallium (III) sulfide,Wide bandgap semiconductors
更新于2025-09-19 17:15:36
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[IEEE 2019 IEEE 2nd International Conference on Power and Energy Applications (ICPEA) - Singapore, Singapore (2019.4.27-2019.4.30)] 2019 IEEE 2nd International Conference on Power and Energy Applications (ICPEA) - Characteristics of Disturbance in Frequency 9 -150 kHz of Photovoltaic System under Fluctuated Solar Irradiance
摘要： Gallium nitride (GaN) is a wide bandgap semiconductor material and is the most popular material after silicon in the semiconductor industry. The prime movers behind this trend are LEDs, microwave, and more recently, power electronics. New areas of research also include spintronics and nanoribbon transistors, which leverage some of the unique properties of GaN. GaN has electron mobility comparable with silicon, but with a bandgap that is three times larger, making it an excellent candidate for high-power applications and high-temperature operation. The ability to form thin-AlGaN/GaN heterostructures, which exhibit the 2-D electron gas phenomenon leads to high-electron mobility transistors, which exhibit high Johnson’s figure of merit. Another interesting direction for GaN research, which is largely unexplored, is GaN-based micromechanical devices or GaN microelectromechanical systems (MEMS). To fully unlock the potential of GaN and realize new advanced all-GaN integrated circuits, it is essential to cointegrate passive devices (such as resonators and filters), sensors (such as temperature and gas sensors), and other more than Moore functional devices with GaN active electronics. Therefore, there is a growing interest in the use of GaN as a mechanical material. This paper reviews the electromechanical, thermal, acoustic, and piezoelectric properties of GaN, and describes the working principle of some of the reported high-performance GaN-based microelectromechanical components. It also provides an outlook for possible research directions in GaN MEMS.
关键词： HEMT,piezoelectric materials,micromachining,microelectromechanical systems,III-V,wide bandgap,resonators
更新于2025-09-19 17:13:59
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Synthesis of a new wide-bandgap conjugated copolymer with 3-trifluoromethylthiophene monomer and Its application to non-fullerene polymer solar cells
摘要： In this study, a novel wide-bandgap conjugate donor-acceptor type copolymer, PBDT-TFMTh, containing benzodithiophene (BDT) as a donor unit and trifluoromethyl (TFM)-substituted thiophene (Th) as an acceptor unit was designed and synthesized. The physical, optical, and electrochemical properties of PBDT-TFMTh were studied in detail and it was found to have lower-lying highest occupied and lowest unoccupied molecular orbitals. The polymer solar cell with an active layer consisting of PBDT-TFMTh and acceptor IDT(TCV)2 showed a relatively high power conversion efficiency of 2.25% after thermal annealing at 120 (cid:1)C.
关键词： power conversion efficiency,wide-bandgap copolymer,3-trifluoromethylthiophene,polymer solar cell
更新于2025-09-19 17:13:59
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Asymmetric Siloxane-Functional Side Chains Enable High-Performance Donor Copolymers for Photovoltaic Applications
摘要： In this work, three benzodithiophene (BDT)-benzotriazole (BTA) alternated wide bandgap (WBG) copolymers attaching symmetric or asymmetric conjugated side chains, namely PDBTFBTA-2T, PBDTFTBA-TSi and PBDTFBTA-2Si, were developed for efficient nonfullerene polymer solar cells. The symmetry effect of the side chains was investigated in detail on the overall properties of these donor polymers. The results demonstrated that the introduced siloxane functional groups showed less effect on the absorptions and frontier orbital levels of the prepared polymers but had significant effect on the miscibility between these polymer donors and nonfullerene acceptor. If increasing the content of siloxane functional groups, the miscibility of the polymer donors and Y6 would be improved, leading to the decreased domain size and more mixed domains. Interestingly, the active blend based on PBDTFTBA-TSi with asymmetric side chains exhibited more balanced miscibility, carrier mobility and phase separation, benefiting exciton diffusion and dissociation. Therefore, a champion power conversion efficiency (PCE) of 14.18% was achieved finally in PBDTFTBA-TSi devices, which was 20.6% and 19.0% higher than the symmetric counterparts of PBTFBTA-2T devices (PCE = 11.76%) and PBDTFBTA-2Si devices (PCE = 11.92%), respectively. This work highlights that the asymmetric side chain engineering based on siloxane functional groups is a promising design strategy for high-performance polymer donor semiconductors.
关键词： molecular design strategy,nonfullerene polymer solar cells,siloxane functional group,wide bandgap copolymers,asymmetric side chains
更新于2025-09-19 17:13:59
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A New Wide Bandgap Donor Polymer for Efficient Nonfullerene Organic Solar Cells with a Large Open‐Circuit Voltage
摘要： Significant progress has been made in nonfullerene small molecule acceptors (NF-SMAs) that leads to a consistent increase of power conversion efficiency (PCE) of nonfullerene organic solar cells (NF-OSCs). To achieve better compatibility with high-performance NF-SMAs, the direction of molecular design for donor polymers is toward wide bandgap (WBG), tailored properties, and preferentially ecofriendly processability for device fabrication. Here, a weak acceptor unit, methyl 2,5-dibromo-4-fluorothiophene-3-carboxylate (FE-T), is synthesized and copolymerized with benzo[1,2-b:4,5-b′]-dithiophene (BDT) to afford a series of nonhalogenated solvent processable WBG polymers P1-P3 with a distinct side chain on FE-T. The incorporation of FE-T leads to polymers with a deep highest occupied molecular orbital (HOMO) level of ?5.60?5.70 eV, a complementary absorption to NF-SMAs, and a planar molecular conformation. When combined with the narrow bandgap acceptor ITIC-Th, the solar cell based on P1 with the shortest methyl chain on FE-T achieves a PCE of 11.39% with a large Voc of 1.01 V and a Jsc of 17.89 mA cm?2. Moreover, a PCE of 12.11% is attained for ternary cells based on WBG P1, narrow bandgap PTB7-Th, and acceptor IEICO-4F. These results demonstrate that the new FE-T is a highly promising acceptor unit to construct WBG polymers for efficient NF-OSCs.
关键词： complementary absorption,wide bandgap,donor polymers,nonfullerene organic solar cells,nonhalogenated solvents
更新于2025-09-19 17:13:59
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - High-Efficiency InAs-InGaAs Quantum Dash Solar Cells Developed Through Current Constraint Engineering
摘要： In principle, quantum-dot intermediate band solar cell (QD-IBSC) operates at a higher current density than a III-V multijunction solar cell (MJSC). Due to this inherent property, heat management becomes important when it is operated under a high concentrated illumination. In this work, we propose one way to circumvent this issue, where a wide bandgap cell is placed on top of QD-IBSC, which acts as a current constraint cell, but instead leads to a higher VOC. We demonstrate a 32.1% efficiency under 225 suns with a bonded InGaP/GaAs widegap cell // InAs-InGaAs QDSC configuration.
关键词： wide bandgap cell,efficiency,VOC,III-V multijunction solar cell,concentrated illumination,quantum-dot intermediate band solar cell,MJSC,QD-IBSC,current constraint cell,heat management
更新于2025-09-19 17:13:59
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Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
摘要： The use of ultra-wide bandgap transparent conducting beta gallium oxide (b-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the ShockleyeQueisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.
关键词： Bulk photovoltaic effect,Pb(Zr,Ti)O3,Solar cell architecture,Ferroelectric photovoltaics,Ga2O3,Gallium oxide,Transparent conducting oxide,Ultra-wide bandgap semiconductors
更新于2025-09-16 10:30:52