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Thermal management and characterization of high-power wide-bandgap semiconductor electronic and photonic devices in automotive applications
摘要： GaN-based high-power wide-bandgap semiconductor electronics and photonics have been considered as promising candidates to replace conventional devices for automotive applications due to high energy conversion efficiency, ruggedness, and superior transient performance. However, performance and reliability are detrimentally impacted by significant heat generation in the device active area. Therefore, thermal management plays a critical role in the development of GaN-based high-power electronic and photonic devices. This paper presents a comprehensive review of the thermal management strategies for GaN-based lateral power/RF transistors and light-emitting diodes (LEDs) reported by researchers in both industry and academia. The review is divided into three parts: (1) a survey of thermal metrology techniques, including infrared thermography, Raman thermometry, and thermoreflectance thermal imaging, that have been applied to study GaN electronics and photonics, (2) practical thermal management solutions for GaN power electronics, and (3) packaging techniques and cooling systems for GaN LEDs used in automotive lighting applications.
关键词： semiconductor,Raman thermometry,infrared thermography,high-power,automotive applications,LEDs,thermoreflectance thermal imaging,GaN,thermal management,wide-bandgap
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements
摘要： This paper discusses the measurement of the input capacitances Cgs and Cgd of SiC and GaN power FETs in order to implement simulation models with an improved mapping of the drain-source voltage vds and drain current id during the switching operation. Based on the gate charge characteristic measured at an inductive load condition using different drain current values and temperature settings, the gate current is allocated to the charging of the gate-drain capacitance Cgd and the gate-source capacitance Cgs. With this approach the capacitance characteristics Cgs(vgs) and Cgd(vgd) are determined in the full operating range of the gate-source voltage vgs and gate-drain voltage vgd.
关键词： wide-bandgap semiconductors,Inter-electrode capacitances,dynamic measurements,cgs,capacitance-voltage characteristics,cgd
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - A Voltage-Edge-Rate-Limiting Soft-Switching Inverter for Wide-Bandgap Devices
摘要： Wide-bandgap (WBG) switches can achieve switching times on the order of several nanoseconds. However, faster switches generate larger inverter output dv/dt. Various deleterious effects attributed to large inverter dv/dt have been observed in various applications, especially in motor drive systems. The effects include false turn-on of WBG switches due to cross-talk, transient over-voltages at motor terminals, electromagnetic interference, and motor bearing failures due to micro arcs. A common approach for limiting peak inverter dv/dt involves the insertion of a dv/dt filter. However, the dv/dt filter introduces extra power losses and increases the size/weight of the heat sink. Soft-switching circuits can reduce inverter dv/dt and switching losses, but using soft-switching to accurately control dv/dt has not been fully explored. A new soft-switching circuit, entitled the auxiliary resonant soft-edge pole (ARSEP), is set forth. The ARSEP improves the available soft-switching circuits so that the dv/dt can be accurately controlled through circuit parameter design. An ARSEP inverter prototype based on SiC MOSFETs was designed, simulated, built, and tested to verify its performance and benefits. Compared to a conventional hard-switched inverter with a dv/dt filter, the ARSEP inverter results in a significant reduction in overall power loss, inductor volume, and weight.
关键词： SiC MOSFETs,soft-switching circuits,auxiliary resonant soft-edge pole (ARSEP),inverter output dv/dt,Wide-bandgap (WBG) switches
更新于2025-09-04 15:30:14
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Thermal and Thermomechanical Modeling to Design a Gallium Oxide Power Electronics Package
摘要： There is significant interest in the power electronics industry in transitioning from silicon to wide-bandgap devices. Gallium oxide devices have the potential to offer comparable or even superior performance than other wide-bandgap devices, but at a much lower cost. Recent breakthroughs include demonstration of a laboratory-scale gallium oxide transistors and diodes; however, a functional power electronics package for these devices is yet to be developed. In this paper, the research methodology in designing an electronics package for gallium oxide devices is outlined. Finite element-based thermal and thermomechanical modeling simulations were conducted to realize a package design that meets the combined target of minimal thermal resistance and improved reliability. Different package designs that include various material combinations and cooling configurations were explored, and their thermal and thermomechanical performance are reported. Furthermore, the short-circuit withstanding capabilities of gallium oxide devices were studied and compared with silicon carbide.
关键词： gallium oxide,thermal modeling,thermomechanical modeling,finite-element,high-temperature packaging,power electronics,wide-bandgap devices
更新于2025-09-04 15:30:14
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Ultra-wide bandgap, conductive, high mobility, and high quality melt-grown bulk ZnGa <sub/>2</sub> O <sub/>4</sub> single crystals
摘要： Truly bulk ZnGa2O4 single crystals were obtained directly from the melt. High melting point of 1900 ± 20 ?C and highly incongruent evaporation of the Zn- and Ga-containing species impose restrictions on growth conditions. The obtained crystals are characterized by a stoichiometric or near-stoichiometric composition with a normal spinel structure at room temperature and by a narrow full width at half maximum of the rocking curve of the 400 peak of (100)-oriented samples of 23 arcsec. ZnGa2O4 is a single crystalline spinel phase with the Ga/Zn atomic ratio up to about 2.17. Melt-grown ZnGa2O4 single crystals are thermally stable up to 1100 and 700 ?C when subjected to annealing for 10 h in oxidizing and reducing atmospheres, respectively. The obtained ZnGa2O4 single crystals were either electrical insulators or n-type semiconductors/degenerate semiconductors depending on growth conditions and starting material composition. The as-grown semiconducting crystals had the resistivity, free electron concentration, and maximum Hall mobility of 0.002–0.1 ?cm, 3 × 1018–9 × 1019 cm?3, and 107 cm2 V?1 s?1, respectively. The semiconducting crystals could be switched into the electrically insulating state by annealing in the presence of oxygen at temperatures ≥700 ?C for at least several hours. The optical absorption edge is steep and originates at 275 nm, followed by full transparency in the visible and near infrared spectral regions. The optical bandgap gathered from the absorption coef?cient is direct with a value of about 4.6 eV, close to that of β-Ga2O3. Additionally, with a lattice constant of a = 8.3336 ?, ZnGa2O4 may serve as a good lattice-matched substrate for magnetic Fe-based spinel ?lms.
关键词： high mobility,melt growth,high quality,ultra-wide bandgap,conductive,single crystals,ZnGa2O4
更新于2025-09-04 15:30:14