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GaN Integration Technology, an Ideal Candidate for High-Temperature Applications: A Review
摘要： In many leading industrial applications such as aerospace, military, automotive, and deep-well drilling, extreme temperature environment is the fundamental hindrance to the use of microelectronic devices. Developing an advanced technology with robust electrical and material properties dedicated for high-temperature environments represents a significant progress allowing to control and monitor the harsh environment regions. It may avoid using cooling structures while improving the reliability of the whole electronic systems. As a wide bandgap semiconductor, gallium nitride is considered as an ideal candidate for such environments, as well as in high-power and high-frequency applications. We review in this paper the main reasons that offer superiority to GaN devices over better-known technologies such as silicon (Si), silicon-on-insulator, gallium arsenide (GaAs), silicon germanium (SiGe), and silicon carbide (SiC). The theory of operation and main challenges at high temperature are discussed, notably those related to materials and contacts. In addition, the main limitations of GaN, including the technological (thermal and chemical) and intrinsic (current collapse and device self-heating) features are provided. In addition, the GaN devices recently developed for high-temperature applications are examined.
关键词： wide-bandgap semiconductors,high-temperature electronics,Extreme temperature applications,gallium-nitride technology
更新于2025-09-23 15:22:29
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Influence of precursor concentration and growth time on the surface morphology and crystallinity of α-Ga<sub>2</sub>O<sub>3</sub> thin films fabricated by mist chemical vapor deposition
摘要： Single-crystal thin films of gallium oxide (Ga2O3), an ultra-wide bandgap semiconductor, were fabricated on c-plane sapphire by mist chemical vapor deposition (mist CVD). The grown ?-Ga2O3 thin films had low surface roughness, and we characterized their initial crystal growth phase by using atomic force microscopy and X-ray diffraction. By varying the precursor concentration, we changed the surface roughness and crystallinity of the thin films. The lattice constants of the ?-Ga2O3 thin films almost matched those of the single crystal in the initial growth phase. We also found that these thin films grew hetero-epitaxially. Finally, mist CVD might have a very short incubation time in this system.
关键词： Gallium oxide,Surface morphology,Crystallinity,Precursor concentration,Mist chemical vapor deposition,Epitaxial growth,Wide bandgap semiconductors
更新于2025-09-23 15:21:01
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Largea??Scale Ultrathin 2D Widea??Bandgap BiOBr Nanoflakes for Gatea??Controlled Deepa??Ultraviolet Phototransistors
摘要： Ternary two-dimensional (2D) semiconductors with controllable wide bandgap, high ultraviolet (UV) absorption coefficient, and critical tuning freedom degree of stoichiometry variation have a great application prospect for UV detection. However, as-reported ternary 2D semiconductors often possess a bandgap below 3.0 eV, which must be further enlarged to achieve comprehensively improved UV, especially deep-UV (DUV), detection capacity. Herein, sub-one-unit-cell 2D monolayer BiOBr nanoflakes (≈0.57 nm) with a large size of 70 μm are synthesized for high-performance DUV detection due to the large bandgap of 3.69 eV. Phototransistors based on the 2D ultrathin BiOBr nanoflakes deliver remarkable DUV detection performance including ultrahigh photoresponsivity (Rλ, 12739.13 A W?1), ultrahigh external quantum efficiency (EQE, 6.46 × 106%), and excellent detectivity (D*, 8.37 × 1012 Jones) at 245 nm with a gate voltage (Vg) of 35 V attributed to the photogating effects. The ultrafast response (τrise = 102 μs) can be achieved by utilizing photoconduction effects at Vg of ?40 V. The combination of photocurrent generation mechanisms for BiOBr-based phototransistors controlled by Vg can pave a way for designing novel 2D optoelectronic materials to achieve optimal device performance.
关键词： monolayer BiOBr,deep UV phototransistors,wide-bandgap semiconductors,high gain
更新于2025-09-23 15:19:57
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Structural and Optical Properties of Zn <sub/>1‐</sub><i> <sub/>x</sub></i> Mg <i> <sub/>x</sub></i> O Prepared by Calcination of ZnO + Mg(OH) <sub/>2</sub> after Hydro Micro Mechanical Activation
摘要： Zn1-xMgxO microcrystals are produced in the 0.15 (cid:2) x (cid:2) 1 composition range by calcination of ZnO + Mg(OH)2 after hydro micro mechanical activation according to the patent WO2018065735A1. The structural properties of the samples have revealed the cohabitation of wurtzite and rock-salt phases for x values ranging from 0.15 up to 0.6 with a clear increase of the proportion of cubic phase with x. A single cubic phase is observed in the range 0.66 (cid:2) x < 1. From the purity of these samples produced at very low cost, it is expected that they will be used as precursors for growth of advanced light emitters integrated into an already existing process as they exhibit exceptionally e?cient (and robust with T) light emission in the ultraviolet region.
关键词： optical properties,oxides,ultraviolet emission,wide bandgap semiconductors
更新于2025-09-23 15:19:57
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Synthesis and structural characterization of microcrystalline Ga2S3 layers on a GaP semiconductor substrate
摘要： Gallium sulfide (Ga2S3) belongs to a group of wide bandgap semiconductors with interesting properties for infrared and nonlinear optics applications. Recent interest in Ga2S3 material focuses on the passivation of various semiconductor surfaces to enhance their electrical and optical properties. This work concerns the growth of microcrystalline gallium sulfide layers on semiconductive GaP substrates. The Ga2S3 layers were successfully obtained by reacting sulfur vapour with thin GaP semiconductor plates at two different temperatures: 450 °C and 600 °C. At the lower temperature (400 °C), no gallium sulfide layer formation was observed on the GaP substrate. Atomic force microscopy and Scanning Electron Microscopy were applied to illustrate the topography of the obtained Ga2S3 layers. Their thickness ranged from a few hundred nanometers to about 1–2 μm. The synthesized layers were structurally characterized by Raman spectroscopy. Raman polarization measurements were used to determine the crystalline phase of the Ga2S3 films. Raman tensor coefficients were obtained by fitting the most intensive Ga2S3 peaks to experimental data. The symmetry of the Raman peaks was in good agreement with the monoclinic Ga2S3 crystal phase.
关键词： Ga2S3 layers,Raman polarization measurements,Gallium (III) sulfide,Wide bandgap semiconductors
更新于2025-09-19 17:15:36
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Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
摘要： The use of ultra-wide bandgap transparent conducting beta gallium oxide (b-Ga2O3) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the ShockleyeQueisser limit for open-circuit voltage (Voc) under typical indoor light. The solar blindness of the electrode enables a record-breaking bulk photovoltaic effect (BPE) with white light illumination (general use indoor light). This work opens up the perspective of ferroelectric photovoltaics which are not subject to the Shockley-Queisser limit by bringing into scene solar-blind conducting oxides.
关键词： Bulk photovoltaic effect,Pb(Zr,Ti)O3,Solar cell architecture,Ferroelectric photovoltaics,Ga2O3,Gallium oxide,Transparent conducting oxide,Ultra-wide bandgap semiconductors
更新于2025-09-16 10:30:52
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Perspective: Ga <sub/>2</sub> O <sub/>3</sub> for ultra-high power rectifiers and MOSFETS
摘要： Gallium oxide (Ga2O3) is emerging as a viable candidate for certain classes of power electronics with capabilities beyond existing technologies due to its large bandgap, controllable doping, and the availability of large diameter, relatively inexpensive substrates. These applications include power conditioning systems, including pulsed power for avionics and electric ships, solid-state drivers for heavy electric motors, and advanced power management and control electronics. Wide bandgap (WBG) power devices offer potential savings in both energy and cost. However, converters powered by WBG devices require innovation at all levels, entailing changes to system design, circuit architecture, qualification metrics, and even market models. The performance of high voltage rectifiers and enhancement-mode metal-oxide field effect transistors benefits from the larger critical electric field of β-Ga2O3 relative to either SiC or GaN. Reverse breakdown voltages of over 2 kV for β-Ga2O3 have been reported, either with or without edge termination and over 3 kV for a lateral field-plated Ga2O3 Schottky diode on sapphire. The metal-oxide-semiconductor field-effect transistors fabricated on Ga2O3 to date have predominantly been depletion (d-mode) devices, with a few demonstrations of enhancement (e-mode) operation. While these results are promising, what are the limitations of this technology and what needs to occur for it to play a role alongside the more mature SiC and GaN power device technologies? The low thermal conductivity might be mitigated by transferring devices to another substrate or thinning down the substrate and using a heatsink as well as top-side heat extraction. We give a perspective on the materials’ properties and physics of transport, thermal conduction, doping capabilities, and device design that summarizes the current limitations and future areas of development. A key requirement is continued interest from military electronics development agencies. The history of the power electronics device field has shown that new technologies appear roughly every 10-12 years, with a cycle of performance evolution and optimization. The older technologies, however, survive long into the marketplace, for various reasons. Ga2O3 may supplement SiC and GaN, but is not expected to replace them.
关键词： MOSFETs,β-Ga2O3,rectifiers,power electronics,thermal conductivity,Gallium oxide,Ga2O3,doping,wide bandgap semiconductors,military electronics
更新于2025-09-16 10:30:52
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Gallium Oxide || Radiation damage in Ga2O3
摘要： β-Ga2O3 has a large bandgap of approximately 4.9 eV and an estimated critical electric field (EC) strength of 8 MV/cm. The large bandgap of β-Ga2O3 allows high-temperature device operation and this large critical field allows high-voltage operation (relative to maximum breakdown) and the most common device structure reported to date has been Schottky rectifiers. This material also has potential in devices with low power loss during high-frequency switching in the GHz regime. Similarly, Ga2O3-based photodetectors are attracting interest for their promise as truly solar-blind deep ultraviolet (UV) photodetectors exhibiting cut-off wavelengths below 280 nm. These would have applications in detection of UV wavelengths for military applications, air purification, space communication, ozone-layer monitoring, and flame sensing.
关键词： β-Ga2O3,photodetectors,radiation damage,Schottky rectifiers,wide bandgap semiconductors
更新于2025-09-09 09:28:46
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Gallium Oxide || Ga2O3 nanobelt devices
摘要： β-Gallium oxide (β-Ga2O3) is attractive as a novel material for (opto)electronics, especially high-power electronics and solar-blind photodetectors (PDs). It has an ultrawide direct bandgap of around 4.8–4.9 eV at room temperature and high thermal and chemical stabilities [1, 2]. The theoretical electrical breakdown field (Ebr) of β-Ga2O3 is known to be (cid:1)8 MV/cm, and 3.8 MV/cm of Ebr has been experimentally demonstrated in a recent report, recording a higher value than those of GaN and SiC. Baliga’s figure of merit (BFOM) of β-Ga2O3 is also superior among some of the other popular wide-bandgap semiconductors, such as 4H-SiC and GaN [3–6]. These outstanding properties have led to a large number of reports on various electrical devices based on β-Ga2O3 including metal-oxide-semiconductor field-effect transistors (MOSFETs), metal-semiconductor field-effect transistors (MESFETs), and Schottky barrier diodes [7–10]. Furthermore, the wide bandgap of β-Ga2O3 provides intrinsic solar blindness that allows fabrication of solar-blind PDs without the need for additional optical filters that block light in the range of long wavelength [11]. Single-crystal β-Ga2O3 is commercially available as a various of growth methods exist; especially the edge-defined film-fed growth (EFG) method that can be used to grow bulk β-Ga2O3 substrates with high crystal quality [12, 13]. However, the low thermal conductivity of β-Ga2O3 has to be considered when fabricating high-power electrical devices.
关键词： high-power electronics,β-Ga2O3,wide-bandgap semiconductors,optoelectronics,solar-blind photodetectors
更新于2025-09-09 09:28:46
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[IEEE 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Atlanta, GA, USA (2018.10.31-2018.11.2)] 2018 IEEE 6th Workshop on Wide Bandgap Power Devices and Applications (WiPDA) - Non-linear Input Capacitance Determination of WBG Power FETs using Gate Charge Measurements
摘要： This paper discusses the measurement of the input capacitances Cgs and Cgd of SiC and GaN power FETs in order to implement simulation models with an improved mapping of the drain-source voltage vds and drain current id during the switching operation. Based on the gate charge characteristic measured at an inductive load condition using different drain current values and temperature settings, the gate current is allocated to the charging of the gate-drain capacitance Cgd and the gate-source capacitance Cgs. With this approach the capacitance characteristics Cgs(vgs) and Cgd(vgd) are determined in the full operating range of the gate-source voltage vgs and gate-drain voltage vgd.
关键词： wide-bandgap semiconductors,Inter-electrode capacitances,dynamic measurements,cgs,capacitance-voltage characteristics,cgd
更新于2025-09-04 15:30:14