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A simulation study of field plate termination in Ga <sub/>2</sub> O <sub/>3</sub> Schottky barrier diodes
摘要： In this work, the field plate termination is studied for Ga2O3 Schottky barrier diodes (SBDs) by simulation. The influence of field plate overlap, dielectric material and thickness on the termination electric field distribution are demonstrated. It is found that the optimal thickness increases with reverse bias increasing for all the three dielectrics of SiO2, Al2O3, and HfO2. As the thickness increases, the maximum electric field intensity decreases in SiO2 and Al2O3, but increases in HfO2. Furthermore, it is found that SiO2 and HfO2 are suitable for the 600 V rate Ga2O3 SBD, and Al2O3 is suitable for both 600 V and 1200 V rate Ga2O3 SBD. In addition, the comparison of Ga2O3 SBDs between the SiC and GaN counterpart reveals that for Ga2O3, the breakdown voltage bottleneck is the dielectric. While, for SiC and GaN, the bottleneck is mainly the semiconductor itself.
关键词： field plate,termination technique,Ga2O3,Schottky barrier diode
更新于2025-09-23 15:22:29
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<i>β</i> -Ga <sub/>2</sub> O <sub/>3</sub> thin film grown on sapphire substrate by plasma-assisted molecular beam epitaxy
摘要： Monoclinic gallium oxide (Ga2O3) has been grown on (0001) sapphire (Al2O3) substrate by plasma-assisted molecular beam epitaxy (PA-MBE). The epitaxial relationship has been confirmed to be [010](ˉ201)β-Ga2O3||[1ˉ100](0001)Al2O3 via in-situ reflection high energy electron diffraction (RHEED) monitoring and ex-situ X-ray diffraction (XRD) measurement. Crystalline quality is improved and surface becomes flatter with increasing growth temperature, with a best full width at half maximum (FWHM) of XRD ω-rocking curve of (ˉ201) plane and root mean square (RMS) roughness of 0.68° and 2.04 nm for the sample grown at 730 °C, respectively. Room temperature cathodoluminescence measurement shows an emission at ~417 nm, which is most likely originated from recombination of donor–acceptor pair (DAP).
关键词： CL measurement,β-Ga2O3,sapphire substrate,PA-MBE,crystalline quality
更新于2025-09-23 15:22:29
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Recent Advances in β-Ga2O3–Metal Contacts
摘要： Ultra-wide bandgap beta-gallium oxide (β-Ga2O3) has been attracting considerable attention as a promising semiconductor material for next-generation power electronics. It possesses excellent material properties such as a wide bandgap of 4.6–4.9 eV, a high breakdown electric field of 8 MV/cm, and exceptional Baliga’s figure of merit (BFOM), along with superior chemical and thermal stability. These features suggest its great potential for future applications in power and optoelectronic devices. However, the critical issue of contacts between metal and Ga2O3 limits the performance of β-Ga2O3 devices. In this work, we have reviewed the advances on contacts of β-Ga2O3 MOSFETs. For improving contact properties, four main approaches are summarized and analyzed in details, including pre-treatment, post-treatment, multilayer metal electrode, and introducing an interlayer. By comparison, the latter two methods are being studied intensively and more favorable than the pre-treatment which would inevitably generate uncontrollable damages. Finally, conclusions and future perspectives for improving Ohmic contacts further are presented.
关键词： Intermediate semiconductor layer,Metal stacks,Contacts,β-Ga2O3
更新于2025-09-23 15:22:29
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European Microscopy Congress 2016: Proceedings || Structure solution of the complex λ-La6W2O15
摘要： The structure solution of the complex β-Ga2O3 (β-Ga2O3) phase has been studied by a number of groups [1-3], but little detailed information has been reported due to the lack of good single crystals. The β-Ga2O3 phase has a monoclinic structure with space group C2/m and lattice parameters a = 12.23 ?, b = 3.04 ?, c = 5.80 ?, β = 103.7°. Recently, the structures of La2Ga2O7, La1.8Sr0.2Ga2O6.9 and La0.9Sr0.1Ga0.9Mg0.1O2.9 have been solved using X-ray powder diffraction (XRPD) [4-7]. The β-Ga2O3 phase has been studied by a number of groups [8-11], but little detailed information has been reported due to the lack of good single crystals. The β-Ga2O3 phase has a monoclinic structure with space group C2/m and lattice parameters a = 12.23 ?, b = 3.04 ?, c = 5.80 ?, β = 103.7°. Recently, the structures of La2Ga2O7, La1.8Sr0.2Ga2O6.9 and La0.9Sr0.1Ga0.9Mg0.1O2.9 have been solved using X-ray powder diffraction (XRPD) [4-7].
关键词： structure solution,β-Ga2O3,X-ray powder diffraction,monoclinic,lattice parameters
更新于2025-09-23 15:22:29
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Gas sensing performance of GaOOH and β-Ga<sub>2</sub>O<sub>3</sub> synthesized by Hydrothermal method: A comparison
摘要： Gallium Oxy Hydrate (GaOOH) and β-Ga2O3 nanostructures in submicron scale have been synthesized at low temperature by surfactant-free hydro-thermal method. First, GaOOH has been synthesized using Gallium nitrate anhydrate, Ammonium hydroxide as precursors and double distilled water as solvent. As obtained GaOOH powders have been characterized by XRD, FE–SEM, UV–VIS, Thermo Gravimetric Analysis, I-V characteristics and BET surface analysis in order to reveal their structural, morphological, optical, thermal, electrical and surface properties. FE-SEM micrographs confirm the rod like and needle like morphologies of GaOOH and β- Ga2O3 samples, respectively. Porous nature of the samples observed through BET and BJH analyses. Synthesized GaOOH and β-Ga2O3 powders have been subjected to room temperature CO2 gas sensing in the range, 2000 ppm – 10000 ppm. GaOOH showed quick response of 80 s and fast recovery of 129 s at 8000 ppm while β-Ga2O3 showed quick response of 52 s at 8000 ppm and faster recovery of 98 s at 4000 ppm. Also, the repeatability studies were done for GaOOH and β-Ga2O3 films by exposing to different CO2 concentrations for a period of 6 consecutive days. β-Ga2O3 showed enhanced CO2 sensing response than that of GaOOH due to its better structural, electrical, morphological and surface properties.
关键词： Gallium Oxide (Ga2O3),Gallium Oxide Hydroxide (GaOOH),Hydrothermal method,Characterization,Room temperature CO2 sensing
更新于2025-09-23 15:21:21
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Ultra-wide-bandgap (ScGa)2O3 alloy thin films and related sensitive and fast responding solar-blind photodetectors
摘要： Although b-Ga2O3 is considered an excellent candidate for solar-blind photodetectors (PDs) owing to its direct bandgap (4.9 eV) and high stability, the cut-off wavelength often oversteps the DUV region, reducing the rejection ratio of the PD. Moreover, oxygen vacancies, which always appear in b-Ga2O3 ?lms, act as trap centers hindering carrier recombination and signi?cantly lowering response speed. To disentangle these issues, we propose in this work to modify b-Ga2O3 by incorporating Sc to form ternary (ScGa)2O3 alloys. Thanks to the wider bandgap of Sc2O3 (~5.7 eV) than Ga2O3 and stronger SceO bonding than GaeO, the (ScGa)2O3 alloy ?lms exhibit a wider bandgap (5.17 eV) with fewer oxygen vacancies compared with pure-Ga2O3, as expected, which eventually lead to an ultra-low dark current (0.08 pA at 10 V) and faster response times (trise: 41/149 ms; tdecay: 22/153 ms) of the alloy ?lm-based PDs. Furthermore, the peak and cut-off response wavelengths of the (ScGa)2O3 PD are blue shifted relative to the pure Ga2O3 PD, resulting in a higher rejection ratio (>500 vs ~317). The Sc-alloying strategy, taking advantage of wider bandgap of Sc2O3 and stronger SceO bonding to widen the bandgap while reducing the intrinsic carriers and oxygen vacancies in the (ScGa)2O3 alloy, is expected to be generally applicable to the design of other wide-bandgap oxide alloys for developing high-performance UV photodetectors with a low dark current and high response speed.
关键词： Ga2O3 thin ?lms,Pulsed laser deposition,Solar-blind photodetectors,Sc-alloying
更新于2025-09-23 15:21:01
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Photocatalytic degradation of tetracycline hydrochloride over rugby-like ?2-Ga <sub/>2</sub> O <sub/>3</sub> with a 3D hierarchically assembled porous structure for environmental remediation
摘要： A novel rugby-like β-Ga2O3 with 3D hierarchically assembled porous structures was successfully constructed through a facile precipitation-calcination method. The synthesized Ga2O3 materials were used to the photocatalytic degradation of tetracycline hydrochloride (TC·HCl) and the effects of calcination temperature on photocatalytic activity were discussed. The conversions of TC·HCl over Ga2O3-900 was 99.0% for Ga2O3-900 after 25 min UV-light irradiation, which was higher than those of commercial Ga2O3 (71.2%) and P25 (82.9%). The best photocatalytic activity of Ga2O3-900 could be attributed to the large specific surface area, intrinsic electronic properties and stable 3D hierarchically assembled porous structure. Based on the liquid chromatography quadrupole time-of-flight mass spectrometry (LC-QTOF-MS) analysis, the photocatalytic mechanism of Ga2O3 and feasible degradation pathway of TC·HCl were proposed. We believe that the present study can exploit an effective avenue to design the photocatalysts with 3D hierarchical porous structures to meet ever-increasing environmental remediation requirements.
关键词： β-Ga2O3,photodegradation pathway,nano-porous structures,tetracycline hydrochloride,optical properties
更新于2025-09-23 15:21:01
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Fabrication and characterization of Mg-doped ?μ-Ga2O3 solar-blind photodetector
摘要： In this work, Mg-doped ε-Ga2O3 (3.38 cation % of Mg) solar-blind photodetector is fabricated by using radio-frequency magnetron sputtering and metal-organic chemical vapor deposition methods on sapphire substrate. The results show that the Mg-doped ε-Ga2O3 thin film solar-blind photodetector exhibit a photo-to-dark current ratio of 1.68 102, responsivity of 77.2 mA/W, specific detectivity of 2.85 1012 Jones, and external quantum efficiency of 37.8 % at 5 V under 40 μW/cm2 254 nm ultraviolet light illumination, as well as the stable light switching property driven by different applied voltages and light intensities. The achieved Mg-doped ε-Ga2O3 solar-blind photodetector is promised to advance relevant developments of the metastable Ga2O3 optoelectronic devices.
关键词： MOCVD,solar-blind,Mg dopant,magnetron sputtering,ε-Ga2O3
更新于2025-09-23 15:21:01
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Fabrication and optoelectronic properties of Ga2O3/Eu epitaxial films on nanoporous GaN distributed Bragg reflectors
摘要： Nanoporous GaN distributed Bragg re?ectors (DBRs) with a high re?ectivity (* 92%), which was fabricated via a doping selective electrochemical etching process, were used to deposit Eu-doped b-Ga2O3 ?lms by using pulsed layer deposition. Structural and chemical composition analyses indicated that the 900 (cid:3)C-annealed ?lm in air has the best crystalline quality and highest photo-luminescence (PL) ef?ciency. The epitaxial relationship between the b-Ga2O3: Eu ?lm and DBR mirror was Ga2O3 (201)kGaN (0001) with Ga2O3 [010]kGaN [1210]. Compared to the Eu:Ga2O3 ?lm on reference template, the 900 (cid:3)C-an-nealed ?lm on the DBR mirror presented a * 20-fold enhancement in the PL emission. The performance enhancement was attributed to light-coupling enhancement of the buried DBR mirror. Because of the good electrical properties of the annealed ?lms, the fabricated DBR substrates pave the way for devel-oping a range of rare-earth-doped Ga2O3 optoelectronic devices.
关键词： Ga2O3/Eu,optoelectronic properties,pulsed layer deposition,distributed Bragg re?ectors,nanoporous GaN
更新于2025-09-23 15:21:01
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Characterization of Epitaxial ?2-(Al,Ga,In)2O3-Based Films and Applications as UV Photodetectors
摘要： Epitaxial ?lms of b-(AlxGa1?x)2O3, b-Ga2O3, and b-(InxGa1?x)2O3 were grown on (001) sapphire substrates via metalorganic chemical vapor deposition (MOCVD). The compositions of the ?lms as determined from energy dispersive x-ray analysis (EDX) and x-ray photoelectron spectroscopy (XPS) results were XAl = 0.57 ± 0.05 and 0.76 ± 0.05 and XIn = 0.12 ± 0.05 and 0.21 ± 0.05. The optical bandgap was found to correspondingly vary between 6.0 ± 0.2 and 3.9 ± 0.1 eV, as a function of composition via XPS and UV–visible spectroscopy (UV–Vis). X-ray diffraction, scanning electron microscopy, and atomic force microscopy revealed the ?lms to be highly-oriented with nanocrystalline domains. Schottky- and MSM-based solar-blind UV photodetectors were fabricated on the ?lms and showed responsivities at 20 V varying from > 104 A/W for the Ga2O3 devices, > 103 A/W for the (AlxGa1?x)2O3 devices and > 102 A/W for the (InxGa1?x)2O3 devices. Modest shifts in wavelength selectivity corresponding with the changes in composition/bandgap were also measured. Time response measurements on Schottky and MSM detectors reveal rise and dwell times on the order of a minute, indicating the presence of photoconductive gain. Noise-equivalent powers were in the fW–pW regime with speci?c detectivities (D?) between 1010 and 1012 Jones. Scanning photocurrent maps display large photocurrent generation at the Schottky interface in the case of a b-Ga2O3 Schottky detector, whereas for an b-(InxGa1?x)2O3 MSM detector the photocurrent generation occurs in the device channel and at the Schottky interface.
关键词： b-(AlxGa1?x)2O3,b-(InxGa1?x)2O3,b-Ga2O3,Metalorganic chemical vapor deposition
更新于2025-09-23 15:19:57