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Gallium Oxide || Schottky contacts to β-Ga2O3
摘要： The success of β-Ga2O3 as the wide-bandgap semiconductor platform for ultrahigh efficiency electronic and optoelectronic devices relies on the ability to control the properties of ohmic and rectifying, or Schottky, contacts on this material. This chapter focuses on the current status of research and development of Schottky contacts on β-Ga2O3: the materials and structures used and their corresponding electrical properties.
关键词： Schottky contacts,β-Ga2O3,electronic devices,optoelectronic devices,wide-bandgap semiconductor
更新于2025-09-10 09:29:36
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Annealing effects on properties of Ga2O3 films deposited by plasma-enhanced atomic layer deposition
摘要： We investigated annealing effects on the Ga2O3 thin films deposited on c-sapphire by plasma-enhanced atomic layer deposition. A metastable Ga2O3 films was deposited on c-sapphire substrate by PEALD with high plasma power at 250 °C. The (2?0?1) preferred orientation b-Ga2O3 films were obtained after annealing in oxygen atmosphere. Structure and surface analysis revealed that the annealed films had more fine-grained surface features. The film annealed for 2 h exhibited the best crystallinity. The bandgap of the as-deposited and annealed films for 2 h were 4.56 and 4.97 eV, respectively. The process of high-temperature annealing contributed gallium, oxygen atoms to obtain enough energy to migrate to the suitable location and increased the vigilance of crystallinity.
关键词： Thin films,Ga2O3,Epitaxial growth,XRD,Annealing
更新于2025-09-10 09:29:36
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Direct wafer bonding of Ga2O3–SiC at room temperature
摘要： Integration of Ga2O3 on SiC substrate with a high thermal conductivity is one of the promising solutions to reduce the self-heating of Ga2O3 devices. Direct wafer bonding of Ga2O3–SiC at room temperature was achieved by surface activated bonding (SAB) using a Si-containing Ar ion beam. An average bonding energy of ~2.31 J/ m2 was achieved. Both the structure and the composition of the interface were investigated to understand the bonding mechanism. According to the interface analysis, a ~2.2 nm amorphous SiC layer and a ~1.8 nm amorphous β-Ga2O3 layer originating from the ion beam bombardment for surface activation were found at the interface. A slight di?usion at the interface might already happen at room temperature, which should contribute to the strong bonding. To con?rm the di?usion at a low temperature and investigate the possible interfacial variation during device operation, an annealing process was carried out at 473 K. The same analysis was applied on the annealed bonding interface. The interfacial layer shrank by ~0.5 nm after annealing. The further di?usion of Ga and Si at the interface caused by the annealing was con?rmed. Besides, the position of the Ar count peak inside the amorphous Ga2O3 layer shifted by ~0.5 nm toward SiC.
关键词： Ga2O3,Room temperature,Direct wafer bonding,SiC
更新于2025-09-10 09:29:36
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The electronic structure and magnetic property of the Mn doped β-Ga2O3
摘要： Ga2O3 is a promising candidate for high power, high voltage devices. In this work, the band structure of the pure β-Ga2O3 and the impact of orbital coupling on the Mn doped β-Ga2O3 electronic structure are analyzed based on density functional theory. The Mn dopant induces impurity bands near the band edge, resulting in the decrease of the band gap of the Ga2O3. When the Mn dopants only substitute the octahedrally coordinated Ga atoms, the doped systems possess the most stable structure and the ferromagnetism, the Monte Carlo simulation predicts that the Curie temperature is 421K. The room temperature ferromagnetism can be ascribed to the strong p-d coupling and the delocalization of O-2p orbital. The oxygen vacancy and gallium vacancy can induce the deep donor level and acceptor level into the band gap, respectively. Due to the valence change of Mn dopant, the Mn dopant undergoes a transition from donor to acceptor when the substrate obtains more carriers. Our results not only explain the observed electronic and magnetic properties in experiment, but also provide a theoretical model for designing high performance Ga2O3 based devices.
关键词： β-Ga2O3,Density Functional Theory,Electronic Structure,Ferromagnetism
更新于2025-09-10 09:29:36
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Nanoscale groove textured β-Ga <sub/>2</sub> O <sub/>3</sub> by room temperature inverse metal-assisted chemical etching and photodiodes with enhanced responsivity
摘要： β-Ga2O3 is an emerging wide band-gap semiconductor that holds great promise for next generation power electronics and optoelectronics. β-Ga2O3 based ultraviolet photodetectors have been the subject of active research for the last few years. However, no micro and nanostructure surface texturing has been demonstrated for efficient light management in β-Ga2O3 optoelectronic applications yet. We hereby present nanoscale groove textured β-Ga2O3 metal-semiconductor-metal photodiodes, enabled by the unique metal-assisted chemical etching (MacEtch) method at room temperature in liquid. Although the textured surface stoichiometry shows ～10% oxygen deficiency which results in a reduced Schottky barrier height and increased dark current, clear enhancement of the responsivity is demonstrated, compared to the planar untreated surface. The realization of MacEtch’s applicability to β-Ga2O3 opens the door for producing more sophisticated device structures for this material, without resorting to conventional dry etch and potential damage.
关键词： responsivity,β-Ga2O3,nanoscale groove textured,photodiodes,metal-assisted chemical etching
更新于2025-09-10 09:29:36
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Gallium Oxide || Progress in MOVPE growth of Ga2O3
摘要： Semiconducting sesquioxides, especially Ga2O3, are known since decades [1–3]; however, it is only in the past few years that they are massively investigated. This is essentially due to the development of suitable technologies for growth of large single crystals [4–9] and homo- and heteroepitaxial layers [10–15]. The possibility of growing single crystals and films with relatively low defect density, opened the way to new application areas, in addition to the well-known transparent conducting oxides (TCO) electrodes, namely, (i) substrates for GaN epilayers and (ii) high-power transistors, and (iii) UV detectors.
关键词： homoepitaxial,β-Ga2O3,MOVPE,ε-Ga2O3,Ga2O3,heteroepitaxial
更新于2025-09-09 09:28:46
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Current Aperture Vertical β-Ga2O3 MOSFETs Fabricated by N- and Si-Ion Implantation Doping
摘要： Depletion-mode vertical Ga2O3 metal-oxide-semiconductor field-effect transistors featuring a current aperture were developed on a halide vapor phase epitaxial drift layer grown on a bulk β-Ga2O3 (001) substrate. Three ion implantation steps were employed to fabricate the n++ source regions, lateral n channel, and p current blocking layers, where Si and N were selected as the donor and deep acceptor dopant species, respectively. The transistors delivered a drain current density of 0.42 kA/cm2, a specific on-resistance of 31.5 m?·cm2, and an output current on/off ratio of over 108. High-voltage performance of the present devices was hampered by a large gate oxide field in the off-state causing high gate leakage, a limitation that can be readily overcome through optimized doping schemes and an improved gate dielectric. The demonstration of a planar-gate vertical Ga2O3 transistor based on a highly manufacturable all-ion-implanted process greatly enhances the prospects for Ga2O3-based power electronics.
关键词： vertical transistor,power MOSFET,ion implantation,Ga2O3,current aperture
更新于2025-09-09 09:28:46
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Electrical properties of α-Ir <sub/>2</sub> O <sub/>3</sub> /α-Ga <sub/>2</sub> O <sub/>3</sub> pn heterojunction diode and band alignment of the heterostructure
摘要： Corundum-structured iridium oxide (a-Ir2O3), showing p-type conductivity, is a strong candidate to form high-quality pn heterojunctions with a-Ga2O3. We fabricated a-Ir2O3/a-Ga2O3 pn heterojunction diodes and they showed well-defined rectifying current-voltage (I-V) characteristics with the turn-on voltage of about 2.0 V. The band alignment at the a-Ir2O3/a-Ga2O3 interface was investigated by X-ray photoemission spectroscopy, revealing a staggered-gap (type-II) with the valence- and conduction-band offsets of 3.34 eV and 1.04 eV, respectively. The total barrier height for electrons was about 2.4 eV, which reasonably agreed with the turn-on voltage in the I-V characteristics. This means that electrons are mainly attributed to electrical conduction around the turn-on voltage.
关键词： pn heterojunction,a-Ir2O3,X-ray photoemission spectroscopy,a-Ga2O3,band alignment
更新于2025-09-09 09:28:46
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Gallium Oxide || MBE growth and characterization of gallium oxide
摘要： Gallium oxide (Ga2O3) is an ultrawide bandgap (UWBG) oxide semiconductor with an indirect bandgap of 4.5–5.2 eV. The beta-phase (β-Ga2O3) is the commonly regarded as most stable of the several crystalline phases (or polymorphs) of Ga2O3. Because of its wide bandgap, it is transparent from ultraviolet to visible wavelengths. It had first been widely explored as a transparent conductive oxide (TCO) for optical devices such as light-emitting diodes. Also, it has been used as a gate dielectric in metal oxide semiconductor (MOS) structures in GaAs. The β-Ga2O3 can be synthesized by melt growth techniques such as Czochraski, floating zone (FZ), and edge-defined film-fed growth (EFG) at atmospheric pressure which can provide inexpensive large area bulk substrates. The commercial availability of large area Ga2O3 substrates is an important advantage over GaN and similar group III-N compound semiconductors in many potential electrical and optical device applications. Besides material benefit of UWBG, these substrates provide a high-quality crystalline platform for power electronics devices that require higher crystalline quality, low-defect density material with precise doping control capabilities.
关键词： β-Ga2O3,MBE growth,Gallium oxide,ultrawide bandgap,heteroepitaxy,homoepitaxy
更新于2025-09-09 09:28:46
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Gallium Oxide || Synthesis, optical characterization, and environmental applications of β-Ga2O3 nanowires
摘要： In this chapter, we present the synthesis, optical characterization, and environmental applications of the β-Ga2O3 nanowires. The gap-state and near-band-edge transitions of β-Ga2O3 nanowires were identified and studied. The defects states play an important role in their optical emission and photocatalytic property. Owing to its various interesting properties such as wide bandgap, chemical and thermal stability, robust defect states, large surface to volume ratios, β-Ga2O3 nanowires are very promising in potential applications in optoelectronic, environmental applications, and fundamental research in the future.
关键词： wide-band-gap semiconductors,synthesis,optical characterization,photocatalytic activity,β-Ga2O3 nanowires,environmental applications
更新于2025-09-09 09:28:46