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Plasma enhanced atomic layer deposition of plasmonic TiN ultrathin films using TDMATi and NH3
摘要： Transition metal nitrides, like titanium nitride (TiN), are promising alternative plasmonic materials. Here we demonstrate a low temperature plasma‐enhanced atomic layer deposition (PE‐ALD) of non‐stoichiometric TiN0.71 on lattice‐matched and ‐mismatched substrates. The TiN was found to be optically metallic for both thick (42 nm) and thin (11 nm) films on MgO and Si <100> substrates, with visible light plasmon resonances in the range of 550–650 nm. We also demonstrate that a hydrogen plasma post‐deposition treatment improves the metallic quality of the ultrathin films on both substrates, increasing the ε1 slope by 1.3 times on MgO and by 2 times on Si (100), to be similar to that of thicker, more metallic films. In addition, this post‐deposition was found to tune the plasmonic properties of the films, resulting in a blue‐shift in the plasmon resonance of 44 nm on a silicon substrate and 59 nm on MgO.
关键词： optical properties,plasmonics,atomic layer deposition (ALD),thin film,titanium nitride
更新于2025-09-16 10:30:52
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Origin of the tunable carrier selectivity of atomic-layer-deposited TiOx nanolayers in crystalline silicon solar cells
摘要： Titanium oxide (TiOx) nanolayers grown by atomic layer deposition are investigated with respect to their application as carrier selective contacts for crystalline silicon (c-Si) solar cells. Although TiOx is known to act as an electron contact, in this work the selectivity of TiOx layers is found to be widely tunable from electron to hole selective depending on deposition conditions, post-deposition treatments, and work function of the metal electrode used. Using TiOx and an intrinsic hydrogenated amorphous silicon buffer layer, solar cell test structure exhibiting open-circuit voltages (Voc) as high as 720 and 650 mV are shown for electron and hole selective contacts, respectively. Surface photovoltage and capacitance-voltage measurements reveal that carrier selectivity is correlated with the amount of c-Si band bending induced by TiOx, which are governed not only by the effective work function difference at the Si/TiOx interface, but also by the negative fixed charge present in the TiOx layer. This new finding is in contrast to the previous model for carrier transport where selectivity is determined only by the asymmetric band offsets at the Si/contact interface. It highlights the influence of induced band bending to produce carrier depletion/inversion conditions, and the importance of its selectivity effect in a c-Si absorber.
关键词： Titanium oxide,Solar cells,Carrier selective contacts,Atomic layer deposition
更新于2025-09-16 10:30:52
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Adjusting Interfacial Chemistry and Electronic Properties of Photovoltaics Based on a Highly Pure Sb <sub/>2</sub> S <sub/>3</sub> Absorber by Atomic Layer Deposition
摘要： The combination of oxide and heavier chalcogenide layers in thin film photovoltaics suffers limitations associated with oxygen incorporation and sulfur deficiency in the chalcogenide layer or with a chemical incompatibility which results in dewetting issues and defect states at the interface. Here, we establish atomic layer deposition (ALD) as a tool to overcome these limitations. ALD allows one to obtain highly pure Sb2S3 light absorber layers, and we exploit this technique to generate an additional interfacial layer consisting of 1.5 nm ZnS. This ultrathin layer simultaneously resolves dewetting and passivates defect states at the interface. We demonstrate via transient absorption spectroscopy that interfacial electron recombination is one order of magnitude slower at the ZnS-engineered interface than hole recombination at the Sb2S3/P3HT interface. The comparison of solar cells with and without oxide incorporation in Sb2S3, with and without the ultrathin ZnS interlayer, and with systematically varied Sb2S3 thickness provides a complete picture of the physical processes at work in the devices.
关键词： interfacial layer,extremely thin absorber,transient absorption,atomic layer deposition,antimony sulfide,ultrathin layer
更新于2025-09-12 10:27:22
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Enhanced Nucleation of Atomic Layer Deposited Contacts Improves Operational Stability of Perovskite Solar Cells in Air
摘要： Metal-halide perovskites show promise as highly efficient solar cells, light-emitting diodes, and other optoelectronic devices. Ensuring long-term stability is now a major priority. In this study, an ultrathin (2 nm) layer of polyethylenimine ethoxylated (PEIE) is used to functionalize the surface of C60 for the subsequent deposition of atomic layer deposition (ALD) SnO2, a commonly used electron contact bilayer for p–i–n devices. The enhanced nucleation results in a more continuous initial ALD SnO2 layer that exhibits superior barrier properties, protecting Cs0.25FA0.75Pb(Br0.20I0.80)3 films upon direct exposure to high temperatures (200 °C) and water. This surface modification with PEIE translates to more stable solar cells under aggressive testing conditions in air at 60 °C under illumination. This type of “built-in” barrier layer mitigates degradation pathways not addressed by external encapsulation, such as internal halide or metal diffusion, while maintaining high device efficiency up to 18.5%. This nucleation strategy is also extended to ALD VOx films, demonstrating its potential to be broadly applied to other metal oxide contacts and device architectures.
关键词： perovskite solar cells,barrier layer,nucleation,stability testing,atomic layer deposition
更新于2025-09-12 10:27:22
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Sponge-templated production of ultra-thin ZnO nanosheets for printed ultraviolet photodetectors
摘要： This paper describes a simple and convenient approach to synthesize large amounts of ZnO nanosheets, which are suitable for producing a key component, i.e., colloidal nanoink, of printed ultraviolet photodetectors. ZnO nanosheets are produced by atomic layer deposition, where a three-dimensional polymer sponge with a large specific surface area is used as the template. Systematic studies including scanning electron microscopy, X-ray diffraction, and transmission electron microscopy reveal that the synthesized ZnO nanosheets have a good crystalline quality and mechanical flexibility. After dispersing ZnO nanosheets in a solvent to form a stable and colloidal nanoink, an ultraviolet photodetector is demonstrated through the printing method. Such a printed ultraviolet photodetector that utilizes ZnO nanosheets as the functional materials exhibits a high responsivity of (cid:2)148 A/W and a response time of 19 s. Our present study may provide a practical method to produce large amounts of functional nanosheets for printing electronics, which paves the way for developing high-performance, low-cost, large-area printed, and flexible electronics.
关键词： atomic layer deposition,printing electronics,ultraviolet photodetectors,ZnO nanosheets
更新于2025-09-12 10:27:22
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Enhancement in photovoltaic properties of bismuth ferrite/zinc oxide heterostructure solar cell device with graphene/indium tin oxide hybrid electrodes
摘要： Integrating of ferroelectric thin films with two-dimensional materials may provide a novel and unique characteristics in the field of optoelectronics due to the coupling of their distinctive intrinsic features. A heterostructure (bismuth ferrite/zinc oxide) device is fabricated with different types of the electrode to enhance the power conversion efficiency (PCE). A single-phase multiferroic BFO thin film is grown by atomic layer deposition (ALD) method and annealed in different environments such as helium, nitrogen, and oxygen. We investigated the effect of annealing parameters and different types of electrodes on solar cell applications. We observed that the leakage current 10 orders of magnitude was reduced by decreasing in the dielectric loss. Further, the power conversion efficiency (PCE) is improved from 4.1% to 7.4% with a hybrid transparent electrode (graphene/indium tin oxide). The value of PCE is further increased at a low temperature. So, the improvement in the key parameter of bismuth ferrite thin-film evidently highlights the importance of annealing atmosphere and graphene as an electrode in BFO thin film applications in optoelectronics.
关键词： Power conversion efficiency,Transparent electrode,Annealing atmosphere,Atomic layer deposition,Graphene,Leakage current
更新于2025-09-12 10:27:22
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Plasma-enhanced atomic layer deposition of gallium nitride thin films on fluorine-doped tin oxide glass substrate for future photovoltaic application
摘要： To serve as an electron transport layer (ETL) or a buffer layer for the third-generation solar cells, a compact and uniform gallium nitride (GaN) thin layer with suitable energy level is needed. Meanwhile, it is also meaningful to explore its low-temperature deposition especially on transparent electrodes. In this work, GaN thin films have been deposited on fluorine-doped tin oxide (FTO) glass substrate for the first time by plasma-enhanced atomic layer deposition (PEALD) technology. 280-300°C is identified as the optimized deposition temperature for forming a compact and uniform n-type GaN layer on FTO substrate. The 50-200 PEALD cycles of GaN layers show an amorphous structure, and their bandgap values ranging from 3.95 eV to 3.58 eV have been displayed. Interestingly, as the GaN thickness increases, Fermi level moves upward obviously along with a reduction of conduction band minimum (CBM) value as well as an increase of valance band maximum (VBM) value. The thickness-dependent band structure is preliminarily explained as the relaxation of compressive stress and increased carrier concentration for a thicker GaN layer. The above situation enables us to regulate the energy level of GaN layer via thickness control, and thus accelerates its future application in new generation solar cells.
关键词： photoelectric properties,FTO glass substrate,GaN thin film,plasma-enhanced atomic layer deposition
更新于2025-09-12 10:27:22
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Improved Reproducibility of PbS Colloidal Quantum Dots Solar Cells Using Atomic Layer–Deposited TiO <sub/>2</sub>
摘要： Thanks to their broadly tunable band gap and strong absorption, colloidal lead chalcogenide quantum dots (QDs) are highly appealing as solution-processable active layers for third generation solar cells. However, the modest reproducibility of this kind of solar cell is a pertinent issue, which inhibits the exploitation of this material class in optoelectronics. This issue is not necessarily imputable to the active layer but may originate from different constituents of the device structure. This work is focused on the deposition of TiO2 electron transport layer. Atomic layer deposition (ALD) greatly improves the reproducibility of PbS QD solar cells compared to the previously optimized sol-gel (SG) approach. Power conversion efficiency (PCE) of the solar cells using ALD-TiO2 lies in the range between 5.5 and 7.2%, while solar cells with SG-TiO2 have PCE range from 0.5 to 6.9% with a large portion of short-circuited devices. Investigations of TiO2 layers by atomic force microscopy and scanning electron microscopy revealed that these films have very different surface morphology. While the TiO2 films prepared by sol-gel synthesis and deposited by spin coating are very smooth, TiO2 films made by ALD repeat the surface texture of the FTO substrate underneath.
关键词： electron transporting layer,quantum dots,titanium dioxide,solar cells,atomic layer deposition
更新于2025-09-11 14:15:04
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3.4: Applications of TFE mask‐less technology for foldable AMOLED displays
摘要： Thin-film encapsulation (TFE) for foldable AMOLED display is necessary to have good reliability and excellent bendability. TFE mask induces particles easily and crack occurs in thick TFE layer during panel bending. We developed TFE with Al2O3 layer for high water-proof and very thin thickness, satisfying the requirement of reliability and bendability. The Al2O3 layer in TFE structure was deposited by low temperature atomic layer deposition (ALD) method，and we realized TFE mask-less process through adapting dry-etch parameters for Al2O3 etch, finding that BCl3 has very excellent dry-etch selectivity between inorganic layer (SiOx/SiNx/SiOxNy) and Al2O3. Besides, we also attempted to make the organic layer of TFE acted as etch mask, and it proved to be feasible, indicating that all the TFE masks could be taken out effectively. Moreover, we proved good optic and reliability characteristics of AMOLED display with mask-less TFE structure.
关键词： Atomic Layer Deposition (ALD),mask-less,Thin-Film Encapsulation (TFE),AMOLED
更新于2025-09-11 14:15:04
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High-Temperature Selective Emitter Design and Materials: Titanium Aluminum Nitride Alloys for Thermophotovoltaics
摘要： The efficiency of a thermophotovoltaic (TPV) system depends critically upon the spectral selectivity and stability of an emitter, which may operate most effectively at temperatures in excess of 1000 °C. We computationally design and experimentally demonstrate a novel selective emitter design based on multilayer nanostructures, robust to off-normal emission angles. A computational search of the material and temperature compatibility space of simple emitter designs motivates new material classes and identifies several promising multilayer nanostructure designs for both TPV absorber and emitter applications. One such structure, comprising a thin (<100 nm) tunable TixAl1?xN (TiAlN) absorber and refractory oxide Bragg reflector is grown on W metal foil. In agreement with simulations, the emitter achieves record spectral efficiency (43.4%) and power density (3.6 W/cm2) for an emitter with at least 1 h of high temperature (>800 °C) operation.
关键词： solar thermophotovoltaics,titanium aluminum nitride,selective emitters,optical coating,atomic layer deposition
更新于2025-09-11 14:15:04