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Bipolar Resistive Switching Effect in BiFeO3/Nb:SrTiO3 Heterostructure by RF Sputtering at Room Temperature
摘要： The (001) oriented BiFeO3 thin film was deposited on the Nb: SrTiO3 substrate by radio frequency magnetron sputtering technology, and the bipolar resistive switching effect was observed in the BiFeO3/Nb: SrTiO3 heterostructure. The results showed that the ratio between the high resistance and low resistance was more than two orders at a reading pulse of -0.5 V and it exhibited excellent retention over 3600 s. The current density-voltage characteristic was dominated by the space-charge-limited conduction. The resistive switching effect of the structure was attributed to the trapping/detrapping of the charge carriers.
关键词： space-charge-limited conduction,bipolar resistive switching,BiFeO3 films,sputter
更新于2025-09-23 15:22:29
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Effect of strain on the modifications in electronic structure and resistive switching in Ca-doped BiFeO <sub/>3</sub> films
摘要： Strain-induced modifications in the structure, electronic structure, electrical, and ferroelectric properties of the Bi0.90Ca0.10FeO3 (BCFO)/Nb-doped SrTiO3 (100) films have been systematically studied in light of variation in film thickness. X-ray diffraction and ?-scan measurements confirm the single phase, (100) oriented epitaxial growth of all films. Room temperature absorption spectra show the presence of asymmetric broad peak around ～2.5 eV, which is indicative of the presence of defect states inside the bandgap and is attributed to the oxygen vacancies. Improvement in the bipolar resistive switching behavior with a decrement in oxygen vacancies and improvement in ferroelectric properties with increasing film thickness suggest the crucial role of oxygen vacancies and strain in modifying the electrical properties of the BCFO films. Improvement in the ferroelectric behavior is attributed to the increment in the Fe 3d-O 2p hybridization, localization of Fe 3deg/Bi 6s-O 2p orbitals, and reduction in the oxygen vacancies with an increase in the film thickness. Observed stable retention and large ON/OFF switching ratio in BCFO films make them a promising candidate for application in the non-volatile memory device.
关键词： Ca-doped BiFeO3 films,resistive switching,ferroelectric properties,strain,electronic structure
更新于2025-09-04 15:30:14