1：Experimental Design and Method Selection:

The study used RF magnetron sputtering to deposit BiFeO3 thin films on Nb:SrTiO3 substrates at room temperature, followed by post-annealing to achieve crystallization. Electrical measurements were conducted to observe bipolar resistive switching.

2：Sample Selection and Data Sources:

Samples were prepared using (001)-oriented 0.7wt% Nb-doped SrTiO3 single crystal substrates. Data were obtained from X-ray diffraction, atomic force microscopy, and current-voltage measurements.

3：7wt% Nb-doped SrTiO3 single crystal substrates. Data were obtained from X-ray diffraction, atomic force microscopy, and current-voltage measurements. List of Experimental Equipment and Materials:

3. List of Experimental Equipment and Materials: Equipment includes RF magnetron sputtering system, X-ray diffractometer (D8 Advance, Bruker), atomic force microscope (Mutimode Ⅷ, Bruker), and semiconductor parameter analyzer (Agilent Technologies B1500A). Materials include Bi1.1FeO3 target, Pt and In electrodes.

4：1FeO3 target, Pt and In electrodes. Experimental Procedures and Operational Workflow:

4. Experimental Procedures and Operational Workflow: Films were deposited with specific parameters (base pressure 3.2×10-4 Pa, working pressure 0.83 Pa, RF power 65 W in Ar atmosphere), annealed at 600°C for 30 min in O2, and electrodes were deposited. Measurements involved sweeping voltages and recording J-V characteristics.

5：2×10-4 Pa, working pressure 83 Pa, RF power 65 W in Ar atmosphere), annealed at 600°C for 30 min in O2, and electrodes were deposited. Measurements involved sweeping voltages and recording J-V characteristics. Data Analysis Methods:

5. Data Analysis Methods: Data were analyzed using semi-logarithmic and double-logarithmic plots to determine conduction mechanisms, with statistical analysis of resistance ratios and retention times.