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Effect of strain on the modifications in electronic structure and resistive switching in Ca-doped BiFeO <sub/>3</sub> films

DOI:10.1063/1.5045844 期刊:Journal of Applied Physics 出版年份:2019 更新时间:2025-09-04 15:30:14
摘要: Strain-induced modifications in the structure, electronic structure, electrical, and ferroelectric properties of the Bi0.90Ca0.10FeO3 (BCFO)/Nb-doped SrTiO3 (100) films have been systematically studied in light of variation in film thickness. X-ray diffraction and ?-scan measurements confirm the single phase, (100) oriented epitaxial growth of all films. Room temperature absorption spectra show the presence of asymmetric broad peak around ~2.5 eV, which is indicative of the presence of defect states inside the bandgap and is attributed to the oxygen vacancies. Improvement in the bipolar resistive switching behavior with a decrement in oxygen vacancies and improvement in ferroelectric properties with increasing film thickness suggest the crucial role of oxygen vacancies and strain in modifying the electrical properties of the BCFO films. Improvement in the ferroelectric behavior is attributed to the increment in the Fe 3d-O 2p hybridization, localization of Fe 3deg/Bi 6s-O 2p orbitals, and reduction in the oxygen vacancies with an increase in the film thickness. Observed stable retention and large ON/OFF switching ratio in BCFO films make them a promising candidate for application in the non-volatile memory device.
作者: Sadaf Jethva,Savan Katba,Mukul Bhatnagar,Mukesh Ranjan,Dinesh Shukla,D. G. Kuberkar
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To investigate the effect of film thickness on the structural, optical, electronic structure, I-V, and ferroelectric properties of Bi0.90Ca0.10FeO3 (BCFO) multiferroic films, focusing on strain-induced modifications in the rectifying I-V behavior and the effect of film thickness on the resistive switching behavior.

The study concludes that strain-induced modifications due to film thickness variation significantly affect the structural, electronic, and ferroelectric properties of Bi0.90Ca0.10FeO3 films. The improvement in ferroelectric behavior with increasing film thickness is attributed to enhanced Fe 3d-O 2p hybridization and reduced oxygen vacancies. The films exhibit stable retention and large ON/OFF switching ratio, making them promising for non-volatile memory applications.

The study is limited to the effects of film thickness and strain on the properties of Bi0.90Ca0.10FeO3 films. The role of other factors such as doping concentration and substrate type is not explored. The study also does not address the long-term stability and scalability of the films for memory device applications.

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