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Negative Capacitance Black Phosphorus Transistors With Low SS
摘要： Negative capacitance (NC) shows great potential to enable transistors with the steeper slope, which is very useful for voltage/power applications. Black phosphorus (BP) is theoretically predicted as good channel materials for NC-FETs. However, the experimental demonstration of BP has so far remained elusive. Here, for the first time, NC transistors based on BP have been demonstrated. By connecting to a 20-nm HfZrO ferroelectric capacitor, both two types of BP transistors show lower subthreshold slope (SS). For 5-nm AlOx BP transistor, the SS decreases from 200 to 104 mV/dec. The experimental results are analyzed with the BP-NCFET model, and the calculated transfer curve can fit well with the experimental curve, which proves the validation of the model. Our work sheds light on using NC BP FETs for low-power flexible electronics applications.
关键词： low power,HfZrO,Black phosphorus (BP),subthreshold slope (SS),negative capacitance (NC)
更新于2025-09-23 15:22:29
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Tunable Schottky barriers in ultrathin black phosphorus field effect transistors via polymer capping
摘要： It is still a great challenge to avoid the degradation of ultrathin black phosphorus (BP) since its discovery in 2014. Various methods have been explored to stabilize the properties of ultrathin BP through capping technology or chemical passivation. Besides, the large metal-semiconductor contact resistance is also one of the critical issues. The two problems hinder the further development of ultrathin BP devices. Herein, we demonstrate that polymethyl methacrylate (PMMA) capping can not only enhance the durability of the ultrathin BP effectively and nondestructively, but also tune the effective Schottky barriers (SBs) formed at the interfaces between the metal and semiconductor dramatically. Particularly, the Schottky barrier (SB) for electron injection from metal to semiconductor is decreased by ~ 13 meV and the performance of the BP field effect transistor (FET) is strongly enhanced with the current on/off ratio increased by 6.8 times for the hole conduction after the PMMA capping. In addition, after the electron beam irradiation to the PMMA layer, the charge neutral point of the BP FET exhibits remarkable negative shift resulting in the electron dominated semiconductor channel at zero gate voltage. Furthermore, through partially capping the BP channel, a prototype of BP p-n diode was demonstrated with a maximum rectification factor of 21.3. The diode performs quite well with just a quarter of the BP channel capped by the PMMA layer. Our findings suggest that the PMMA capped ultrathin BP would be a promising choice for future device applications.
关键词： PMMA capping,ambipolar field effect transistor,ultrathin black phosphorus,Schottky barrier
更新于2025-09-23 15:22:29
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Anisotropic third-order nonlinearity in pristine and lithium hydride intercalated black phosphorus
摘要： Two-dimensional (2D) black phosphorus (BP) displays unique anisotropic properties in its linear optical responses, but its third-order nonlinearity (Kerr effect) has remained relatively unexplored. Here we measured the third-order nonlinear optical responses in exfoliated BP and in lithium hydride intercalated BP (LiH-BP) flakes using polarization-resolved microscopic femtosecond Z-scan technique. Strong optical Kerr nonlinearities were measured for single flakes of BP and LiH-BP, with third-order nonlinear susceptibilities that are larger than many 2D materials. The nonlinear coefficients of LiH-BP are higher than those of BP, indicating that lithium hydride intercalation enhances not only the ambient stability of BP but also its nonlinear optical response. Highly anisotropic polarization-dependent Kerr nonlinearities of both BP and LiH-BP flakes were observed. The strong nonlinear and anisotropic optical responses of BP and LiH-BP indicate great potential of these materials in nonlinear photonics device applications.
关键词： in-plane anisotropy,nonlinear optical responses,lithium hydride intercalated black phosphorus,Kerr nonlinearity,Black phosphorus
更新于2025-09-23 15:21:21
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Recent Advances in Black Phosphorus-Based Electronic Devices
摘要： The rediscovery of graphene in the recent past has propelled the rapid development of exfoliation and other thin layer processing techniques, leading to a renewed interest in black phosphorus (BP). Since 2014, BP has been extensively studied due to its superior electronic, photonic, and mechanical properties. In addition, the unique intrinsic anisotropic characteristics resulting from its puckered structure can be utilized for designing new functional devices. In retrospect, significant efforts have been directed toward the synthesis, basic understanding, and applications of BP in the fields of nanoelectronics, ultrafast optics, nanophotonics, and optoelectronics. Here, the recent development of BP-based devices, such as nanoribbon field-effect transistors, complementary logic circuits, memory devices, and the progress made in meeting the challenges associated with contact resistance, in-plane anisotropy, and advanced gate stack, are reviewed. Finally, the prospects of 2D materials in meeting the International Technology Roadmap for Semiconductor requirements for the year 2030 are discussed.
关键词： black phosphorus,memory,gas sensors,field-effect transistors,complementary logic circuits
更新于2025-09-23 15:21:21
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Non-volatile Organic Transistor Memory based on Black Phosphorus Quantum dots as Charge Trapping Layer
摘要： High performance organic nano-floating gate transistor memory (NFGTM) has important prerequisites of low processing temperature, solution–processable layers and charge trapping medium with high storage capacity. We demonstrate organic NFGTM using black phosphorus quantum dots (BPQDs) as a charge trapping medium by simple spin-coating and low processing temperature (< 120 oC). The BPQDs with diameter of 12.6 ± 1.5 nm and large quantum confined bandgap of ~2.9 eV possess good charge trapping ability. The organic memory device exhibits excellent memory performance with a large memory window of 61.3 V, write-read-erase-read cycling endurance of 103 for more than 180 cycles and reliable retention over 10,000 sec. In addition, we successfully improved the memory retention to ON/OFF current ratio > 104 over 10,000 sec by introducing PMMA as the tunneling layer.
关键词： floating gate transistor,organic memory,solution-processed,Black phosphorus,quantum dots
更新于2025-09-23 15:21:01
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Black Phosphorus Quantum Dots in Aqueous Ethylene Glycol for Macroscale Superlubricity
摘要： In this study, black phosphorus quantum dots (BPQDs) have been successfully prepared at a low cost and high yield by liquid-based high energy ball milling method. The obtained BPQDs with an average lateral size of 6.5 ± 3 nm and a thickness of 3.4 ± 2.6 nm dispersed stably in ethylene glycol (EG). A robust macroscale superlubricity state (μ: 0.002) was achieved under a high contact pressure of 336 MPa via the lubrication of BPQDs-EG aqueous suspension (BPQDs-EGaq) at the Si3N4/sapphire frictional interface. The wear rate lubricated by BPQDs-EGaq suspension account for 5.96% of that lubricated by EG aqueous solution (EGaq), demonstrating the improvement in the anti-wear property with the addition of BPQDs. The rolling effect of BPQDs and the low shear stress between the BPQDs interlamination played important roles in the improvement in the anti-wear property. The oxidative products of BPQDs (PxOy) contributed to the effective realization of macroscale superlubricity. This work realized macroscale superlubricity at a high contact pressure by combining the BPQDs with special liquid molecules and provided the great potential in industrial applications.
关键词： Interface,Black phosphorus quantum dots,Mixed lubrication,high contact pressure,Liquid macroscale superlubricity
更新于2025-09-23 15:21:01
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2D Material Optoelectronics for Information Functional Device Applications: Status and Challenges
摘要： Graphene and the following derivative 2D materials have been demonstrated to exhibit rich distinct optoelectronic properties, such as broadband optical response, strong and tunable light–mater interactions, and fast relaxations in the flexible nanoscale. Combining with optical platforms like fibers, waveguides, grating, and resonators, these materials has spurred a variety of active and passive applications recently. Herein, the optical and electrical properties of graphene, transition metal dichalcogenides, black phosphorus, MXene, and their derivative van der Waals heterostructures are comprehensively reviewed, followed by the design and fabrication of these 2D material-based optical structures in implementation. Next, distinct devices, ranging from lasers to light emitters, frequency convertors, modulators, detectors, plasmonic generators, and sensors, are introduced. Finally, the state-of-art investigation progress of 2D material-based optoelectronics offers a promising way to realize new conceptual and high-performance applications for information science and nanotechnology. The outlook on the development trends and important research directions are also put forward.
关键词： transition metal dichalcogenides,optoelectronics,MXene,van der Waals heterostructures,information devices,graphene,black phosphorus,2D materials
更新于2025-09-23 15:21:01
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Paper-Based Constant Potential Electrochemiluminescence Sensing Platform with Black Phosphorus as a Luminophore Enabled by a Perovskite Solar Cell
摘要： Exploring e?cient luminophores in the electrochemiluminescence (ECL) system is highly desired to pursue a sensitive ECL sensing platform. Herein, the black phosphorus nanosheets (BP NSs) with excellent ECL properties are investigated and serve as the luminophore with the coreactant of peroxydisulfate (S2O8 2?) solution. Moreover, owing to the overlapping of emission and absorbance spectra, e?ective resonance energy transfer (RET) is realized between the BP NSs and the introduced Au nanoparticles. In order to achieve the portable and miniaturized developing trends for the paper-based ECL sensing platform, a paper-based perovskite solar cell (PSC) device is designed to act as the power source to replace the commonly utilized expensive and cumbersome electrochemical workstation. Bene?ting from that, a PSC driven paper-based constant potential ECL-RET sensing platform is constructed, thereby realizing sensitive microRNAs (miRNAs) detection. What’s more, to attain the preferable analytical performance, the duplex-speci?c nuclease (DSN) is also introduced to assist the target recycling signal ampli?cation strategy. Based on this, highly sensitive detection of miRNA-107 with a range from 0.1 pM to 15 nM is achieved by this designed sensing platform. Most importantly, this work not only pioneers a precedent for developing a high-sensitivity PSC triggered ECL sensing platform but also explores the application prospect of BP nanomaterial in the ?eld of bioanalysis.
关键词： microRNAs detection,resonance energy transfer,perovskite solar cell,black phosphorus nanosheets,electrochemiluminescence
更新于2025-09-23 15:21:01
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Higha??Responsivity Mida??Infrared Black Phosphorus Slow Light Waveguide Photodetector
摘要： Black phosphorus (BP) offers unique opportunities for mid-infrared (MIR) waveguide photodetectors due to its narrow direct bandgap and layered lattice structure. Further miniaturization of the photodetector will improve operation speed, signal-to-noise ratio, and internal quantum efficiency. However, it is challenging to maintain high responsivities in miniaturized BP waveguide photodetectors because of reduced light–matter interaction lengths. To address this issue, a method utilizing the slow light effect in photonic crystal waveguides (PhCWGs) is proposed and experimentally demonstrated. A shared-BP photonic system is proposed and utilized to fairly and precisely characterize the slow light enhancement. Close to the band edge around 3.8 μm, the responsivity is enhanced by more than tenfold in the BP photodetector on a 10 μm long PhCWG as compared with the counterpart on a subwavelength grating waveguide. At a 0.5 V bias, the BP PhCWG photodetector achieves a 11.31 A W?1 responsivity and a 0.012 nW Hz?1/2 noise equivalent power. The trap-induced photoconductive gain is validated as both the dominant photoresponse mechanism and the major limiting factor of the response speed. The BP slow light waveguide photodetector is envisioned to realize miniaturized high-performance on-chip MIR systems for widespread applications including environmental monitoring, industrial process control, and medical diagnostics.
关键词： waveguides,slow light,photodetectors,mid-infrared,black phosphorus
更新于2025-09-23 15:21:01
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Solution-Based Property Tuning of Black Phosphorus
摘要： The air instability of black phosphorus (BP) severely hinders the development of its electronic and optoelectronic applications. Although a lot of effort has been made to passivate it against degradation in ambient conditions, approaches to further manipulate the properties of passivated BP are still very limited. Herein, we report a simple and low-cost chemical method that can achieve BP passivation and property tailoring simultaneously. The method is conducted by immersing a BP sample in the solution containing both 2,2,6,6-tetramethylpiperidinyl-N-oxyl (TEMPO) and triphenylcarbenium tetrafluorobor in a mixture of water and acetone (v/v = 1:1). After the treatment, the BP sample is functionalized with TEMPO, which not only efficiently passivates BP but also p-dopes BP to a degenerated density level of 1013 cm?2. The performance of the BP field effect transistor is improved after functionalization with a high Ion/Ioff ratio of 106 and carrier mobility of 881.5 cm2/(V·s). The functionalization-induced doping also significantly reduces the contact resistance between BP and the Cr/Au electrode to 0.97 kΩ·μm. Additionally, we observe a great reduction of BP electrical and optical anisotropies after functionalization. This chemical functionalization method provides a viable route to simultaneously passivate and tune the properties of BP.
关键词： p-type doping,anisotropy,functionalization,black phosphorus,contact resistance
更新于2025-09-23 15:21:01