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Energy Dissipation in Black Phosphorus Heterostructured Devices
摘要： Two-dimensional (2D) black phosphorus (BP) has attracted increasing interest for next-generation solid-state device applications due to its unique blend of versatile properties. The ultrathin physique and low thermal conductivity (40–20 Wm?1 K?1) of BP make it susceptible to premature Joule breakdown under moderate electric field induced by inefficient and nonhomogeneous energy dissipation. Here, it is reported that the back-gate BP device suffers Joule breakdown merely under 4 MV m?1 electric field value with the centrally localized fracture. The spatial micro-Raman spectroscopy confirms uneven thermal spreading in BP channel with the center being 20% hotter than the lateral ends. Furthermore, to mitigate the early breakdown and uneven spreading, vertical van der Waals structure is assembled. The results show that the vertical BP device exhibits 230 times higher field strength and one order enhancement in power sustainability than those of lateral devices due to the integration of thermally favorable constituent materials and formation of the optimal path for self-heat removal.
关键词： black phosphorus,graphene,thermal dissipation,van-der Waals heterostructures,high electric field
更新于2025-09-10 09:29:36
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Fast identification of crystalline orientation of anisotropic two-dimensional materials using scanning polarization modulation microscopy
摘要： In this work, we have demonstrated that scanning polarization modulation microscopy (SPMM) provides a fast method for the identification of crystalline orientation of anisotropic two-dimensional (2D) materials. Using home-built 532 nm excited transmission SPMM, we identified the crystalline orientation of 2D orthorhombic black phosphorus, monoclinal 1T0-MoTe2, and triclinic ReS2 by measuring signals in only two incident polarization directions. So, it took just a few seconds to identify the crystalline orientation of anisotropic 2D materials. Our studies revealed that the SPMM method could be applied to arbitrary anisotropic 2D materials when selecting a suitable wavelength.
关键词： black phosphorus,1T0-MoTe2,scanning polarization modulation microscopy,anisotropic two-dimensional materials,ReS2,crystalline orientation
更新于2025-09-10 09:29:36
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Excitonic complexes in anisotropic atomically thin two-dimensional materials: Black phosphorus and
摘要： The effect of anisotropy in the energy spectrum on the binding energy and structural properties of excitons, trions, and biexcitons is investigated. To this end we employ the stochastic variational method with a correlated Gaussian basis. We present results for the binding energy of different excitonic complexes in black phosphorus (bP) and TiS3 and compare them with recent results in the literature when available, for which we find good agreement. The binding energies of excitonic complexes in bP are larger than those in TiS3. We calculate the different average interparticle distances in bP and TiS3 and show that excitonic complexes in bP are strongly anisotropic whereas in TiS3 they are almost isotropic, even though the constituent particles have an anisotropic energy spectrum. This is also confirmed by the correlation functions.
关键词： biexciton,TiS3,binding energy,black phosphorus,trion,anisotropy,stochastic variational method,exciton
更新于2025-09-09 09:28:46
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Highly Promoted Carrier Mobility and Intrinsic Stability by Rolling Up Monolayer Black Phosphorus into Nanoscrolls
摘要： Rolling up two-dimensional (2D) materials into nanoscrolls could not only retain the excellent properties of their 2D hosts, but also display intriguing physical and chemical properties that arise from their 1D tubular structures. Here, we report a new class of black phosphorus nanoscrolls (bPNSs), which are stable at room-temperature and energetically more favorable than 2D bP. Most strikingly, these bPNSs hold tunable direct band gaps and extremely high mobilities (e.g., the mobility of the double-layer bPNS is about 20-fold higher than that of 2D bP monolayer). Their unique self-encapsulation structure and layer-dependent conduction band minimum can largely prevent the entering of O2 and the production of O?2 and thereby suppress the possible environmental degradation as well. The enhanced intrinsic stability and promoted electronic properties render bPNSs great promise in many advanced electronics or optoelectronics applications.
关键词： optoelectronic applications,black phosphorus nanoscrolls,carrier mobility,intrinsic stability,electronic properties
更新于2025-09-09 09:28:46
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Two-Dimensional Electronics and Optoelectronics: Present and Future
摘要： Since the successful isolation of graphene a little over a decade ago, a wide variety of two-dimensional (2D) layered materials have been studied. They cover a broad spectrum of electronic properties, including metals, semimetals, semiconductors, and insulators. Many of these 2D materials have demonstrated promising potential for electronic and optoelectronic applications.
关键词： transition metal dichalcogenides,black phosphorus,optoelectronics,electronics,two-dimensional materials,graphene
更新于2025-09-09 09:28:46
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Black phosphorus: A novel nanoplatform with potential in the field of bio-photonic nanomedicine
摘要： Single- or few-layer black phosphorus (FLBP) has attracted great attentions in scientific community with its excellent properties, including biodegradability, unique puckered lattice configuration, attractive electrical properties and direct and tunable band gap. In recent years, FLBP has been widely studied in bio-photonic fields such as photothermal and photodynamic therapy, drug delivery, bioimaging and biosensor, showing attractive clinical potential. Because of the marked advantages of FLBP nanomaterials in bio-photonic fields, this review article reviews the latest advances of biomaterials based on FLBP in biomedical applications, ranging from biocompatibility, medical diagnosis to treatment.
关键词： photothermal and photodynamic therapies,biocompatibility,biosensing,drug delivery,Black phosphorus
更新于2025-09-09 09:28:46
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2D Phosphorene: 2D Phosphorene: Epitaxial Growth and Interface Engineering for Electronic Devices (Adv. Mater. 47/2018)
摘要： In article number 1802207, Wei Chen and co-workers highlight their recent progress in the interface engineering of 2D phosphorene for applications in both epitaxial growth and electronic devices. Their detailed investigations reveal the critical role of substrates for epitaxial growth of 2D phosphorene, demonstrate a highly efficient surface transfer doping method, and provide a comprehensive understanding of the oxidation mechanism of black phosphorus in air.
关键词： 2D phosphorene,black phosphorus,interface engineering,surface transfer doping,oxidation mechanism,epitaxial growth,electronic devices
更新于2025-09-09 09:28:46
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A novel functionalized black phosphorus nanocomposite for biosensing
摘要： A novel functionalized black phosphorus (BP) nanocomposite was synthesized through a facile strategy by non-covalently and ionic combining liquid poly(diallyldimethylammonium chloride) (PDDA) with BP. The resultant nanocomposite exhibited good biocompatibility, favorable the solubility and enhanced electric conductivity facilitate to the immobilization of hemoglobin (Hb) and realize fast direct electron transfer with a rate constant (kET) of 15.36 s-1. The immobilized Hb displayed desirable electro-catalytic activity toward nitrite reduction in the range of 80 μM to 3.8 mM with a detection limit of 3.65 μM. The present work advances a new way to construct novel bio-friendly BP-based biosensors, biofuel cells and bioelectronics with excellent sensitivity and stability.
关键词： poly(diallyldimethylammonium chloride),electrochemistry,black phosphorus,biosensor,ionic liquid
更新于2025-09-09 09:28:46
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Synthesis of graphene/black phosphorus hybrid with highly stable P-C bond towards the enhancement of photocatalytic activity
摘要： Black phosphorus (BP), a superior two-dimensional (2D) semiconductor, has attracted much attention due to its unique properties. The graphene (GR)-BP hybrid was synthesized through one pot chemical vapor transport (CVT) approach. The characterization results indicated that P atom was successfully incorporated into GR by the formation of P-C bond. Remarkably, the newly-synthesized GR-BP represented high photocatalytic activity towards 2-chlorophenol (2-CP) degradation, due to the high efficiency of charge separation and transformation caused by the direct band gap of BP and carrier mobility of GR. The removal efficiency for 2-CP reached up to 87.08% within visible light irradiation for 180 min (l > 420 nm). The degradation rate of GR-BP hybrid for 2-CP was approximately 7.29-fold than that of BP within 30 min. In addition, the little increasing of the peak for P-O bond in GR-BP hybrid was observed after being exposed in air for 15 days, meant that the stability of BP was significantly enhanced. It was caused by the decreasing of the oxidation sites in BP due to the formation of P-C bond in hybrid. In brief, our synthetic method for GR-BP not only provides a novel route for the improvement of the stability of BP, but also constitutes an insight into the promising practical application of BP in the photocatalysis field.
关键词： P-C bond,Photocatalytic,Chemical vapor transport,Graphene,Black phosphorus
更新于2025-09-09 09:28:46
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Temperature-Dependent Transport in Ultrathin Black Phosphorus Field-Effect Transistors
摘要： This paper studies the temperature-dependent transport properties of ultrathin black phosphorus (BP). We present measurements of BP Schottky-barrier (SB) metal-oxide-semiconductor field-effect-transistors (MOSFETs) with various channel lengths, constructed from a single BP sample with nanoscale uniformity in thickness and width. The electrical characterization reveals a reversal in the temperature dependence of drain current as a function of gate voltage. This reversal indicates a transition in the charge conduction limiting mechanisms as the device is swept from the off-state into the on-state. In the off-state, charge transport is limited by thermionic emission over the energy barriers at the source/drain SB contacts, and drain current increases with temperature. In the on-state, carriers can easily tunnel across the SB at the contacts, and charge transport is limited by scattering in the channel. As a result, drain current decreases with temperature in the on-state, as scattering increases with temperature. Using Landauer transport theory we derive a closed-form expression for thermionic emission current in SB-MOSFETs with 2-D channels. We use this expression to extract the SB height at metal contact interface with BP, and demonstrate the impact of scattering on the extraction. We then use a comprehensive BP SB-MOSFET model to analyze on-state current as a function of temperature, and demonstrate the effects of charged impurity and phonon scattering on the transport properties of BP through extractions of mobility at fixed carrier density.
关键词： transistor,two-dimensional,black phosphorus,MOSFET,transport,2D materials
更新于2025-09-09 09:28:46