修车大队一品楼qm论坛51一品茶楼论坛,栖凤楼品茶全国楼凤app软件 ,栖凤阁全国论坛入口,广州百花丛bhc论坛杭州百花坊妃子阁

oe1(光电查) - 科学论文

过滤筛选

出版时间
  • 2018
研究主题
  • contrast stretch
  • CMOS image sensor
  • point-of-care (POC) diagnosis
  • bio-microfluidic imaging
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Xi’an University of Technology
183 条数据
?? 中文（中国） ▾

  • [IEEE 2019 IEEE SENSORS - Montreal, QC, Canada (2019.10.27-2019.10.30)] 2019 IEEE SENSORS - A heterojunction device operated as a self-powered photodetector and its spectral response obtained by a Neon-gas microplasma used as a spectral lamp

    摘要： A CMOS pulsewidth modulation (PWM) transceiver circuit that exploits the self-referenced edge detection technique is presented. By comparing the rising edge that is self-delayed by about 0.5 T and the modulated falling edge in one carrier clock cycle, area-ef?cient and high-robustness (against timing ?uctuations) edge detection enabling PWM communication is achieved without requiring elaborate phase-locked loops. Since the proposed self-referenced edge detection circuit has the capability of timing error measurement while changing the length of self-delay element, adaptive data-rate optimization and delay-line calibration are realized. The measured results with a 65-nm CMOS prototype demonstrate a 2-bit PWM communication, high data rate (3.2 Gb/s), and high reliability (BER > 10?12) with small area occupation (540 μm2). For reliability improvement, error check and correction associated with intercycle edge detection is introduced and its effectiveness is veri?ed by 1-bit PWM measurement.

    关键词： transceiver,self-referenced,pulsewidth modulation (PWM),jitter,CMOS

    更新于2025-09-23 15:21:01

  • [IEEE 2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM) - Beijing, China (2019.10.25-2019.10.27)] 2019 IEEE 4th International Conference on Integrated Circuits and Microsystems (ICICM) - A 71.8-87.9 GHz CMOS Injection-Locked Frequency Divider with Coupled Inductance

    摘要： In this paper, a technique of inductor coupling is used to optimize the bandwidth of the injection-locked transformer. This design replaces the inductance of a conventional injection-locked divider with a transformer consists by two coupled inductance, each has its own independent cross-coupled pair. This design is based on 40nm- CMOS technology, with a supply voltage of 0.9V, the post- simulation results achieve a locking range of 71.8-87.9GHz with an injected signal of 0dBm, and the core chip size is 88×130μm2.

    关键词： coupled,transformer,locking range,CMOS,injection-locked frequency divider (ILFD)

    更新于2025-09-23 15:21:01

  • [IEEE 2018 International Conference on Radiation Effects of Electronic Devices (ICREED) - Beijing, China (2018.5.16-2018.5.18)] 2018 International Conference on Radiation Effects of Electronic Devices (ICREED) - Study on the Tracking & Pointing Accuracy Degeneration of Optical Communication System for CMOS Sensor Irradiation Damage

    摘要： The CMOS sensor in space optical communication system may generate irradiation-induced noise, leading to deviation of image centroid. Based on test data, simulated defect spots have been used for calculating the value by grey-level centroid algorithm. It shows that both the amount and position of defect pixels contribute to deviation of image centroid and the accuracy decreasing.

    关键词： tracking & pointing accuracy,CMOS sensor,optical communication,gray centroid algorithm,irradiation damage

    更新于2025-09-23 15:21:01

  • Towards an on-chip optical microsystem for spectroscopic detection of gastrointestinal dysplasia

    摘要： This paper presents a CMOS optical microsystem with a 4×4 photodiodes array and their readout electronics, based on 16 light-to-frequency converters, and 16 high selective optical filters, for spectrophotometric measurement of diffuse reflectance and fluorescence signals, applied to the detection of gastrointestinal dysplasia. The photodiodes array is based on n+/p-epilayer junction silicon photodiodes. Their readout electronics outputs a digital signal, with a frequency proportional to the photodiode current, featuring a sensitivity of 26 Hz/nA at 550 nm, a spectral resolution of 9 MHz and a power consumption of 1 mW. The optical filters are based on 16 thin-film narrow-band Fabry-Perot resonators, in which dielectric mirrors are used. They feature high transmittances and low full-width-half-maximum. Experimental measurements, using phantoms representative of the main absorbing, scattering and fluorescence properties of gastrointestinal tissues, proved the viability of the CMOS optical microsystem with the optical filters to extract those signals, when comparing the obtained results with commercial equipment. The implemented apparatus is ready to be used as a portable system on a surgery room to verify the total removing of gastrointestinal cancer tissue. Moreover, the developed approach is a step forward in the implementation of a gastrointestinal dysplasia detection miniaturized tool.

    关键词： Fluorescence,CMOS optical microsystem,Optical filters,Gastrointestinal dysplasia,Diffuse reflectance

    更新于2025-09-23 15:21:01

  • Volume Fabrication of Quantum Cascade Lasers on 200 mm-CMOS pilot line

    摘要： The manufacturing cost of quantum cascade lasers is still a major bottleneck for the adoption of this technology for chemical sensing. The integration of Mid-Infrared sources on Si substrate based on CMOS technology paves the way for high-volume low-cost fabrication. Furthermore, the use of Si-based fabrication platform opens the way to the co-integration of QCL Mid-InfraRed sources with SiGe-based waveguides, enabling realization of optical sensors fully integrated on planar substrate. We report here the fabrication and the characterization of DFB-QCL sources using top metal grating approach working at 7.4 μm fully implemented on our 200 mm CMOS pilot line. These QCL featured threshold current density of 2.5 kA/cm2 and a linewidth of 0.16 cm?1 with a high fabrication yield. This approach paves the way toward a Mid-InfraRed spectrometer at the silicon chip level.

    关键词： Mid-Infrared sources,DFB-QCL sources,Si substrate,CMOS technology,Quantum Cascade Lasers

    更新于2025-09-23 15:21:01

  • [IEEE 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS) - Vancouver, BC, Canada (2020.1.18-2020.1.22)] 2020 IEEE 33rd International Conference on Micro Electro Mechanical Systems (MEMS) - Monolithic Integration of Plasmonic Meta-Material Absorber with CMOS-MEMs Infrared Sensor for Responsivity Enhancement and Human Detection Application

    摘要： This study integrates monolithically a metal-insulator-metal-based plasmonic metamaterial absorber (PMA) with a thermoelectric (TE) infrared (IR) sensor using standard TSMC CMOS platform. The proposed design extends the strip-via releasing hole structure in [1] to further integrate MIM absorber with TE IR sensor. Such design exhibits three merits: (1) the line width requirement of MIM absorber is achieved by CMOS process, (2) the absorption peaks of MIM absorbers can be modulated by pattern designs in the epsilon-near-pole region, and (3) the MIM absorbers can be designed to broaden the absorption spectrum of IR sensor. In application, the absorption spectrum of IR sensor is designed within 8-14μm in this study for human detection application. Measurement result demonstrates the integration of MIM absorber and IR sensor can achieve 21% improvement and the measured absorption spectrum matches with simulation.

    关键词： CMOS-MEMS,human detection,thermoelectric infrared sensor,responsivity enhancement,plasmonic metamaterial absorber

    更新于2025-09-23 15:21:01

  • A CMOS-Based Energy Harvesting Approach for Laterally Arrayed Multibandgap Concentrated Photovoltaic Systems

    摘要： This article presents an energy harvesting approach for a concentrated photovoltaic (CPV) system based on cell-block-level integrated CMOS converters. The CPV system, built upon the laterally arrayed multibandgap (LAMB) cell structure, is a potentially higher-efficiency and lower-cost alternative to traditional tandem-based systems. The individual cells within a sub-module block are connected for approximate voltage matching, and a multi-input single-output (MISO) buck converter harvests and combines the energy while performing maximum power point tracking (MPPT) locally for each cell type. A miniaturized MISO dc–dc prototype converter operating at 10 MHz is developed in a 130 nm CMOS process. For 45–160-mW power levels, the prototype converter achieves >92% nominal and >95% peak efficiency in a small (4.8 mm2) form factor designed to fit within available space in a LAMB PV cell block. The results demonstrate the potential of the LAMB CPV architecture for enhanced solar energy capture.

    关键词： concentrated photovoltaic (CPV) systems,CMOS dc–dc power converters,energy harvesting,multi-input single-output (MISO) dc–dc converter,maximum power point tracking (MPPT)

    更新于2025-09-23 15:21:01

  • [Communications in Computer and Information Science] Advances in Computing and Data Sciences Volume 905 (Second International Conference, ICACDS 2018, Dehradun, India, April 20-21, 2018, Revised Selected Papers, Part I) || Assessing the Performance of CMOS Amplifiers Using High-k Dielectric with Metal Gate on High Mobility Substrate

    摘要： With the increase in demand for high-performance ICs for both memory and logic applications, scaling has been continued down to 14 nm node. To meet the performance requirements, high-k dielectrics such as HfO2, ZrO2 have replaced SiO2 in the conventional MOS structure for sub-45 nm node. Correspondingly, the polysilicon gate electrode has been replaced by metal gate electrode in order to enable integration with high-k. Furthermore, the standard silicon substrate has been replaced by high mobility substrate in order to obtain desired transistor performance. While the fabrication technology for CMOS has advanced rapidly the traditional design tools used for designing circuits continues to use conventional MOS structure and their properties. This paper aims to analyze frequency response of CMOS common source ampli?er(CSA) and di?erential ampli?er by simulating in MATLAB using metal gate/high-k/Ge structure and to compare with traditionally used ampli?er design using standard MOS structure.

    关键词： CMOS - Complementary Metal Oxide Semiconductor,EOT - E?ective Oxide Thickness,CSA - Common Source Ampli?er,UGB - Unity Gain Bandwidth,High-k dielectrics based ampli?er design

    更新于2025-09-23 15:21:01

  • 92.5% Average Power Efficiency Fully Integrated Floating Buck Quasi-Resonant LED Drivers Using GaN FETs

    摘要： LEDs are highly energy ef?cient and have substantially longer lifetimes compared to other existing lighting technologies. In order to facilitate the new generation of LED devices, approaches to improve power ef?ciency with increased integration level for lighting device should be analysed. This paper proposes a fully on-chip integrated LED driver design implemented using heterogeneous integration of gallium nitride (GaN) devices atop BCD circuits. The performance of the proposed design is then compared with the conventional fully on-board integration of power devices with the LED driver integrated circuit (IC). The experimental results con?rm that the fully on-chip integrated LED driver achieves a consistently higher power ef?ciency value compared with the fully on-board design within the input voltage range of 4.5–5.5 V. The maximal percentage improvement in the ef?ciency of the on-chip solution compared with the on-board solution is 18%.

    关键词： fully on-chip,gallium nitride (GaN),?oating buck converter,complementary-metal-oxide-semiconductor (CMOS),quasi resonance,integrated LED driver,heterogeneous integration

    更新于2025-09-23 15:21:01

  • Development of multi-function digital optoelectronic integrated sensor

    摘要： A multi-function optoelectronic integrated sensor based on the 180 nm standard CMOS process for ambient light detection and position sensing is proposed. The monolithic opto-electronic integrated receiver chip is made of a photodetector (PD), a trans-impedance amplifier (TIA), an analog to digital converter (ADC), and a driving circuit of light-emitting diode (LED). A prototype of the sensor has be implemented and tested, and the opto-electronic model of PD is built and simulated for OEIC Co-design. The sensor has been demonstrated a linear detection of the ambient light with intensity between 0 lux and 10000 lux and the detection precision was measured to be 8.79 lux. The precision of proximity distance detection reaches 0.1mm. Simple recognition of object moving direction can be realized. The sensor can be widely used in smart phones, portable wearable devices and other intelligent product terminals.

    关键词： CMOS integrated circuit,position sensing,integrated optoelectronic sensor,ambient light,mixed-signal circuits

    更新于2025-09-23 15:21:01