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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • contrast stretch
  • CMOS image sensor
  • point-of-care (POC) diagnosis
  • bio-microfluidic imaging
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • Xi’an University of Technology
183 条数据
?? 中文（中国） ▾

  • Silicon photomultipliers with area up to 9 mm2 in a 0.35 μm CMOS process

    摘要： Silicon photomultipliers produced using standard complementary metal oxide semiconductor (CMOS) processes are at the basis of modern applications of sensors for weak photon fluxes. They allow in fact to integrate transistor-based electronic components within sensors and provide intelligent read-out strategies. In this paper we investigate the scalability of a 0.35 μm CMOS process to large area devices. We report the design and characterization of SiPMs with a total area of 1 mm2, 4 mm2 and 9 mm2. Cross talk, photon detection efficiency at 420 nm, gain at 2.5 V overvoltage and breakdown voltage temperature coefficient do not depend on the total area of the sensor and are 10%, 35%, 2.5 × 106 and 35 mV/K respectively. The dark count rate scales with the total area of the device as 180 kHz/mm2. The total output capacitance, the decay time of the single photon signal and the single photon time resolution depend on the area of the device. We obtain a capacitance of 66.9 pF, 270.2 pF and 554.0 pF, a decay time of (27.1 ± 0.1) ns, (50.8 ± 0.1) ns and (78.2 ± 0.1) ns and a single photon time resolution of (77.97 ± 0.51) ps, (201.67 ± 0.98) ps and (282.28 ± 0.86) ps for the 1 mm2, 4 mm2 and 9 mm2 SiPMs respectively.

    关键词： CMOS,Silicon photomultiplier (SiPM),avalanche breakdown structures,Sensors for Brain Positron Emission Tomography

    更新于2025-09-19 17:15:36

  • Review—System-on-Chip SMO Gas Sensor Integration in Advanced CMOS Technology

    摘要： The growing demand for the integration of functionalities on a single device is peaking with the rise of IoT. We are near to having multiple sensors in portable and wearable technologies, made possible through integration of sensor fabrication with mature CMOS manufacturing. In this paper we address semiconductor metal oxide sensors, which have the potential to become a universal sensor since they can be used in many emerging applications. This review concentrates on the gas sensing capabilities of the sensor and summarizes achievements in modeling relevant materials and processes for these emerging devices. Recent advances in sensor fabrication and the modeling thereof are further discussed, followed by a description of the essential electro-thermal-mechanical analyses, employed to estimate the devices’ mechanical reliability. We further address advances made in understanding the sensing layer, which can be modeled similar to a transistor, where instead of a gate contact, the ionosorped gas ions create a surface potential, changing the film’s conduction. Due to the intricate nature of the porous sensing films and the reception-transduction mechanism, many added complexities must be addressed. The importance of a thorough understanding of the electro-thermal-mechanical problem and how it links to the operation of the sensing film is thereby highlighted.

    关键词： SMO gas sensors,CMOS integration,sensing mechanism,modeling,microheater design

    更新于2025-09-19 17:15:36

  • Fabrication of a CMOS-based Imaging Chip with Monolithically Integrated RGB and NIR Filters

    摘要： Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR variation to such a single-chip imaging system is described, including the integration of a metallic shield to minimize crosstalk, and two interference filters: a NIR blocking filter, and a NIR bandpass filter. This is then combined with standard polymer based RGB colour filters. Fabrication of this chip is done in imec's 200 mm cleanroom using standard CMOS technology, except for the addition of RGB colour filters and microlenses, which is outsourced.

    关键词： multispectral imaging,RGB,NIR,CMOS image sensor,monolithic integration,optical filters

    更新于2025-09-19 17:15:36

  • [IEEE 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Xiamen, China (2019.12.17-2019.12.20)] 2019 Photonics & Electromagnetics Research Symposium - Fall (PIERS - Fall) - Plasmonic Band-pass/stop Filters Based on Metal-Insulator-Metal Slit Waveguides

    摘要： Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high-performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance.

    关键词： logic expressive power,nanotechnology,emerging devices,enhanced functionality,CMOS,Beyond-complementary metal-oxide semiconductor (CMOS),CAD for nanotechnology,logic synthesis

    更新于2025-09-19 17:13:59

  • [IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Graphene Based Tunnel Field Effect Transistor for RF Applications

    摘要： Nanoelectronics comprises a variety of devices whose electrical properties are more complex as compared to CMOS, thus enabling new computational paradigms. The potentially large space for innovation has to be explored in the search for technologies that can support large-scale and high-performance circuit design. Within this space, we analyze a set of emerging technologies characterized by a similar computational abstraction at the design level, i.e., a binary comparator or a majority voter. We demonstrate that new logic synthesis techniques, natively supporting this abstraction, are the technology enablers. We describe models and data-structures for logic design using emerging technologies and we show results of applying new synthesis algorithms and tools. We conclude that new logic synthesis methods are required to both evaluate emerging technologies and to achieve the best results in terms of area, power and performance.

    关键词： logic expressive power,CMOS,CAD for nanotechnology,Beyond-complementary metal-oxide semiconductor (CMOS),enhanced functionality,nanotechnology,logic synthesis,emerging devices

    更新于2025-09-19 17:13:59

  • [IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Smart Stack Technology for III-V/Si Multi-Junction Solar Cells

    摘要： We have developed a 5 × 5 mm2 compact silicon-photonic receiver with a 28-nm CMOS transimpedance-amplifier (TIA) chip. The receiver chip was designed using a photonics—electronics convergence design technique for the realization of high-speed and high-efficiency operation because the interfaces of the optical and electrical components greatly influence the receiver characteristics. Optical pins were used to obtain easy optical alignment between the multimode fibers and the germanium photodetectors. An aluminum stripline between the PD and the TIA enhanced the 3-dB bandwidth because its characteristic impedance is greater than the TIA input impedance. Coplanar waveguides (CPWs) on the etched SOI wafer achieved a low insertion loss because the overlap between the electric fields of the CPWs and the silicon layer was reduced. We demonstrated 25-Gb/s error-free operation at both 25 and at 85 °C. The minimum sensitivities and power consumptions of the receivers were ?11.0 dBm and 2.3 mW/Gb/s at 25 °C and ?10.2 dBm and 2.5 mW/Gb/s at 85 °C, respectively. These results show that our receiver can be applied for practical use at high temperatures.

    关键词： optoelectronic integrated circuit,silicon photonics,optical interconnections,CMOS transimpedance amplifier,optical receivers,multimode fiber transmission

    更新于2025-09-19 17:13:59

  • Up to 70 THz bandwidth from an implanted Ge photoconductive antenna excited by a femtosecond Er:fibre laser

    摘要： Phase-stable electromagnetic pulses in the THz frequency range offer several unique capabilities in time-resolved spectroscopy. However, the diversity of their application is limited by the covered spectral bandwidth. In particular, the upper frequency limit of photoconductive emitters - the most widespread technique in THz spectroscopy – reaches only up to 7 THz in the regular transmission mode due to absorption by infrared-active optical phonons. Here, we present ultrabroadband (extending up to 70 THz) THz emission from an Au-implanted Ge emitter that is compatible with mode-locked ?bre lasers operating at wavelengths of 1.1 and 1.55 μm with pulse repetition rates of 10 and 20 MHz, respectively. This result opens up the possibility for the development of compact THz photonic devices operating up to multi-THz frequencies that are compatible with Si CMOS technology.

    关键词： photoconductive antenna,Si CMOS technology,THz emission,Ge emitter,femtosecond fiber lasers

    更新于2025-09-19 17:13:59

  • [IEEE 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Rome, Italy (2019.6.17-2019.6.20)] 2019 PhotonIcs & Electromagnetics Research Symposium - Spring (PIERS-Spring) - Technological Features of Graphene-based RF NEMS Capacitive Switches on a Semi-insulating Substrate

    摘要： This paper presents an all-digital phase-locked loop (AD-PLL) using a voltage-domain digitization realized by an analog-to-digital converter (ADC) instead of adopting a traditional time-to-digital converter (TDC) which usually suffers from a tradeoff in resolution and power consumption. It consists of an 18 bit class-C digitally controlled oscillator (DCO), a 4 bit comparator, a digital loop filter (DLF), and a frequency-locked loop (FLL). Implemented in 65 nm CMOS technology, the proposed PLL reaches an in-band phase noise of ?112 dBc/Hz and an RMS jitter of 380 fs at a carrier frequency of 2.2 GHz. A figure of merit (FoM) of ?242 dB was achieved with a power consumption of only 4.2 mW.

    关键词： sub-sampling,analog-to-digital converter (ADC),voltage-domain,All-digital phase-locked loop (AD-PLL),frequency synthesizer,CMOS,low-power

    更新于2025-09-19 17:13:59

  • Automotive 3.0 ?μm Pixel High Dynamic Range Sensor with LED Flicker Mitigation

    摘要： We present and discuss parameters of a high dynamic range (HDR) image sensor with LED flicker mitigation (LFM) operating in automotive temperature range. The total SNR (SNR including dark fixed pattern noise), of the sensor is degraded by floating diffusion (FD) dark current (DC) and dark signal non-uniformity (DSNU). We present results of FD DC and DSNU reduction, to provide required SNR versus signal level at temperatures up to 120°C. Additionally we discuss temperature dependencies of quantum efficiency (QE), sensitivity, color effects, and other pixel parameters for backside illuminated image sensors. Comparing +120°C junction vs. room temperature, in visual range we measured a few relative percent increase, while in 940 nm band range we measured 1.46x increase in sensitivity. Measured change of sensitivity for visual bands—such as blue, green, and red colors—reflected some impact to captured image color accuracy that created slight image color tint at high temperature. The tint is, however, hard to detect visually and may be removed by auto white balancing and temperature adjusted color correction matrixes.

    关键词： temperature dependence,sensitivity,LED flicker mitigation,quantum efficiency,automotive,CMOS,high dynamic range,image sensor

    更新于2025-09-19 17:13:59

  • [IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Thermally-Induced Nonlinear Spatial Shaping of Infrared Femtosecond Pulses in Nematic Liquid Crystals

    摘要： This paper presents a fully synthesizable phase-locked loop (PLL) based on injection locking, with an interpolative phase-coupled oscillator, a current output digital-to-analog converter (DAC), and a fine resolution digital varactor. All circuits that make up the PLL are designed and implemented using digital standard cells without any modification, and automatically Place-and-routed (P&R) by a digital design flow without any manual placement. Implemented in a 65 nm digital CMOS process, this work occupies only 110 μm × 60 μm layout area, which is the smallest PLL reported so far to the best knowledge of the authors. The measurement results show that this work achieves a 1.7 ps RMS jitter at 900 MHz output frequency while consuming 780 μW DC power.

    关键词： standard cell,digital varactor,small area,low power,gated injection,injection-locking,dual loop,PLL,synthesizable,logic synthesis,edge injection,low jitter,PVT,AD-PLL,DAC,CMOS

    更新于2025-09-19 17:13:59