摘要： The growing demand for the integration of functionalities on a single device is peaking with the rise of IoT. We are near to having multiple sensors in portable and wearable technologies, made possible through integration of sensor fabrication with mature CMOS manufacturing. In this paper we address semiconductor metal oxide sensors, which have the potential to become a universal sensor since they can be used in many emerging applications. This review concentrates on the gas sensing capabilities of the sensor and summarizes achievements in modeling relevant materials and processes for these emerging devices. Recent advances in sensor fabrication and the modeling thereof are further discussed, followed by a description of the essential electro-thermal-mechanical analyses, employed to estimate the devices’ mechanical reliability. We further address advances made in understanding the sensing layer, which can be modeled similar to a transistor, where instead of a gate contact, the ionosorped gas ions create a surface potential, changing the film’s conduction. Due to the intricate nature of the porous sensing films and the reception-transduction mechanism, many added complexities must be addressed. The importance of a thorough understanding of the electro-thermal-mechanical problem and how it links to the operation of the sensing film is thereby highlighted.