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oe1(光电查) - 科学论文

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出版时间
  • 2018
研究主题
  • medical application
  • electrical capacitance tomography
  • electrical impedance tomography
应用领域
  • Optoelectronic Information Science and Engineering
机构单位
  • University of Manchester
  • Chiba University
123 条数据
?? 中文（中国） ▾

  • A comprehensive study on the interface states in the ECR-PECVD SiO2/p-Si MOS structures analyzed by different method

    摘要： The electrical properties of SiO2/p-Si films deposited by ECR-PECVD were studied at different frequencies (100-1 MHz) and gate voltages (-6–3 V). Results showed a frequency dispersion of C-Vg and G/ω-Vg. With increasing frequency, the capacitance and conductance are strongly decreased. An apparent peak in the depletion regime of the G/ω-Vg plots can be attributed to the existence of density Nss at Si/SiO2. The (Nss)value vary from 1.5 × 10^12 to 0.5 × 10^11 eV^-1 cm^-2, it has been determined by High-Low frequency capacitance technic. The Nss- Vg curve presents a peak at about -3 V, suggesting the presence Nss between the (Si)/SiO2 interface. Hill and Coleman method shows that the Nss decreases with increasing frequency which explains the high value of capacitance at low frequency. The Nss and their relaxation time τ by the conductance method ranged from 1.8 × 10^13 to 1.37 × 10^11 eV^-1 cm^-2 and 5.17 × 10^-7 to 8 × 10^-6 s, in the range (0.189-Ev) and (0.57- Ev) eV, respectively. The Nss was responsible for the non-ideal behavior of C-Vg and G-Vg leading to the breakdown of such device. Comparing the three method results show that parallel conductance is very precise and accurate.

    关键词： Capacitance method,Relaxation time,Frequency,Interface states,Metal/Oxide/Semiconductor (MOS),Conductance method

    更新于2025-09-23 15:23:52

  • Temperature-dependent characterizations on parasitic capacitance of tapered through silicon via (T-TSV)

    摘要： With increasing integration density of three-dimensional ICs, temperature is one of the major concern of circuit design, which influences the performance and reliability. In this paper, the parasitic capacitance of tapered TSV (T-TSV) with respect of thermal properties is studied. The concept of the Temperature Coefficient of Capacitance (TCC) is proposed to model the sensitive of TSV capacitance to temperature. It is found that TSV capacitance is sensitive to temperature under high frequency application, and the MOS capacitance variation is the main reason for the change of TSV capacitance and the TCC increases with elevated temperature. Furthermore, the affections of TSV dimensions on TCC are discussed. It is shown that the TCC increases gradually as the TSV radius increases, while the thickness of dielectric layer is the opposite. The cylinder TSV is less thermal sensitive than tapered TSV. This paper provides basis for TSV design considering the temperature effect.

    关键词： tapered through silicon via (T-TSV),parasitic capacitance,temperature effect,three-dimensional ICs (3D ICs)

    更新于2025-09-23 15:23:52

  • [IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Biaxial Strain based Performance Modulation of Negative-Capacitance FETs

    摘要： In this work, we report device simulations conducted to study the performance of biaxially strained ferroelectric-based negative capacitance FETs (NCFETs). We adopted PbZr0.5Ti0.5O3 (PZT) and HfO2 as ferroelectric materials and applied biaxial strain using the first-principles method. It was found that PZT and HfO2 show different trends in the negative capacitance (NC) region under biaxial strain. Biaxial strain strongly affects the NC of PZT, whereas HfO2 is not as susceptible to biaxial strain as PZT. When no strain is applied, HfO2-based NCFETs exhibit a better performance than PZT-based NCFETs. However, the subthreshold slope and ON-state current are improved in the case of PZT-based NCFETs when the compressive biaxial strain is increased, whereas the performance of HfO2-based NCFETs is slightly degraded. In particular, the negative drain-induced barrier lowering and negative differential resistance vary considerably when compressive strain is applied to PZT-based NCFETs.

    关键词： strain,negative capacitance FETs,ferroelectrics,density functional theory,HfO2,PZT

    更新于2025-09-23 15:22:29

  • [IEEE 2018 5th International Conference on Information Technology, Computer, and Electrical Engineering (ICITACEE) - Semarang (2018.9.27-2018.9.28)] 2018 5th International Conference on Information Technology, Computer, and Electrical Engineering (ICITACEE) - Compressive Sensing Approach with Double Layer Soft Threshold for ECVT Static Imaging

    摘要： Electrical Capacitance Volume Tomography (ECVT) is a capacitance based tomography technology which is developed since its advantages on non-invasive properties, low energy, and portability. One of the challenge on developing this tomography technology is on its imaging algorithm. Naturally the imaging method forms under-determined linear system which is indicated by dimension of the measurement is much smaller compared to the projected value dimension. Mathematically it implies ill-posed inverse problem. Therefore Compressive Sensing framework is used to solve the corresponding inverse problem. To improve the accuracy of the predicted image reconstruction, new threshold approach, Double Layer Soft Threshold, is proposed and attached to the proposed Compressive Sensing based ECVT imaging method. The simulations results show that the proposed method is able to improve the conventional ECVT imaging method, Iterative Linear Back Projection (ILBP), by significantly eliminating the elongation error.

    关键词： Imaging method,Electrical Capacitance Volume Tomography,Compressive Sensing,Double Layer Soft Threshold

    更新于2025-09-23 15:22:29

  • Analytical model of the fundamental mode of 3D square split ring resonators

    摘要： An analytical model is developed for the charge and potential distributions of the fundamental mode of three-dimensional (3D) singly split ring resonators (SRRs) with square cross section, which nowadays can be conveniently fabricated by additive manufacturing techniques. This model allows the derivation of approximate formulas for the equivalent capacitance and the analysis of the resonant properties of this type of SRRs at any frequency. The total capacitance is expressed as the sum of the usual gap capacitance and a surface capacitance associated with the charges on the SRR walls, which are determined from the solution for the irrotational part of the electric field of a square split cylinder obtained by conformal mapping. The applicability of the proposed model for a broad range of SRR parameters is demonstrated by comparing the resonance frequency of sample SRR configurations found theoretically with the corresponding values obtained by numerical simulations and experiments. Furthermore, the functions describing the charge and current mode profiles provided in this work can be instrumental in estimating the near-field interaction and the coupling constants of an ensemble of resonant 3D square split rings and thus for tailoring the response of metamaterials and other devices formed by these elements.

    关键词： capacitance,resonance frequency,analytical model,split ring resonators,metamaterials

    更新于2025-09-23 15:22:29

  • Electrowetting (Fundamental Principles and Practical Applications) || Electrostatics

    摘要： Electrowetting (EW) is driven by electrostatic forces. While various basic aspects of electrostatics are taught in high school, EW involves a number of subtleties and somewhat more advanced concepts, e.g. regarding the details of the electric field distribution and forces in complex geometries as well as the response of materials to electric fields. This chapter therefore starts by recapitulating basic principles of electrostatics, focusing on the specific needs of electrowetting. Next to the fundamental laws, boundary conditions, and materials response to electric fields (conductor, dielectrics, leaky dielectrics), we discuss in particular complementary manners of calculating the resulting electrostatic forces based on general principles of energy gradients, global momentum conservation arguments, and local force balance. We will also discuss the solutions of a few specific electrostatic problems of particular interest for EW.

    关键词： conductors,Maxwell stress tensor,electrostatics,leaky dielectrics,electric fields,electrowetting,capacitance,dielectrics

    更新于2025-09-23 15:22:29

  • [IEEE 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Shenzhen (2018.6.6-2018.6.8)] 2018 IEEE International Conference on Electron Devices and Solid State Circuits (EDSSC) - Simplified reconfigurable rectifier with consistent input capacitance for wireless power transfer

    摘要： A 1X/2X reconfigurable rectifier with compact structure and consistent input capacitance under different modes is presented for wireless power transfer in implantable medical devices (IMD). Compared to the conventional design consisting of five switches and three comparators (5S3C), the proposed rectifier merely needs one switch and four comparators (1S4C) and greatly reduces the design complexity. It makes the input capacitance keep consistent during mode transition, and thus does not require extra input capacitance compensation circuit. Additionally, the proposed design eliminates the simultaneous conduction problem during mode transition. Simulation results in a commercial 0.18 um CMOS technology verified the proposed design.

    关键词： 1X/2X reconfigurable rectifier,wireless power transfer,consistent input capacitance

    更新于2025-09-23 15:22:29

  • Negative Capacitance Black Phosphorus Transistors With Low SS

    摘要： Negative capacitance (NC) shows great potential to enable transistors with the steeper slope, which is very useful for voltage/power applications. Black phosphorus (BP) is theoretically predicted as good channel materials for NC-FETs. However, the experimental demonstration of BP has so far remained elusive. Here, for the first time, NC transistors based on BP have been demonstrated. By connecting to a 20-nm HfZrO ferroelectric capacitor, both two types of BP transistors show lower subthreshold slope (SS). For 5-nm AlOx BP transistor, the SS decreases from 200 to 104 mV/dec. The experimental results are analyzed with the BP-NCFET model, and the calculated transfer curve can fit well with the experimental curve, which proves the validation of the model. Our work sheds light on using NC BP FETs for low-power flexible electronics applications.

    关键词： low power,HfZrO,Black phosphorus (BP),subthreshold slope (SS),negative capacitance (NC)

    更新于2025-09-23 15:22:29

  • Correlation Between Currents, X-ray Diffraction Patterns and Transfer Characteristics of SnO <sub/>2</sub> Thin Film Transistor

    摘要： SnO2 thin film transistor (TFT) was prepared with SiOC as a gate insulator on n-type Si and the correlation between bonding structures, the contact properties of SnO2 thin films and the transfer characteristics of TFTs was researched. The current of SnO2 thin films increased with increasing the crystallinity and the crystallinity of SnO2 was increased by annealing. The SnO2 deposited with much oxygen gas flows became an amorphous structure after annealing due to lowered crystallinity. On the other hand, the current decreased in the amorphous structure SnO2 with high oxygen vacancies. However, the ambipolar transfer characteristics of SnO2/SiOC TFT with an amorphous structure had higher stability-mobility than that of TFT with the crystallinity, because of the increment effect of the diffusion current at the depletion layer as the amorphous structure with high Schottky barrier (SB).

    关键词： Amorphous Structure,SnO2,Capacitance,TFT,X-ray Diffraction

    更新于2025-09-23 15:22:29

  • An electrochromic and self-healing multi-functional supercapacitor based on PANI/nw-WO2.7/Au NPs electrode and hydrogel electrolyte

    摘要： Supercapacitors with various functions have been attracting continuous interest due to their key role in modern electronics. In addition to flexibility and transparency, researches also focus on the electrochromism of supercapacitors, which can be used to indicate the remaining capacity of the devices. The self-healing supercapacitors can also recover their energy-storage performances automatically after mechanical damage, thus exhibiting excellent reliability and maintenance. Herein, we report a facile strategy to fabricate a flexible supercapacitor with both electrochromic and self-healing properties. In this design, the classical color-changing materials: polyaniline (PANI) and tungsten oxide nanowires (WO2.7 NWs) are used together to enlarge the electrochemical window, and give the electrode material electrochromic properties. And then Au nanoparticles (Au NPs) are sprayed onto the surface to further increase the electrochemical conductivity. Besides, a novel self-healing hydrogel is synthesized to be used as solid electrolyte. Finally, a symmetrical supercapacitor device is assembled, which shows the areal capacitance of 61 mF/cm2 with excellent stability. By this design, we firstly fabricate a supercapacitor with many functionalities, such as, flexibility, transparence, color changing and self-healing properties all together, providing a new integration strategy for satisfying the next-generation electronics.

    关键词： areal capacitance,Supercapacitor,self-healing,flexible,electrochromic

    更新于2025-09-23 15:22:29