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Superior properties in room-temperature colloidal-dot quantum emitters revealed by ultralow-dark-count detections of temporally-purified single photons
摘要： The realization of high-quality quantum emitters that can operate at room temperature is important for accelerating the application of quantum technologies, such as quantum communication, quantum information processing, and quantum metrology. In this work, we study the photon-antibunching properties on room-temperature emission from individual colloidal quantum dots (CQDs) using superconducting-nanowire single-photon detectors and temporal filtering of the photoluminescence decay curve. We find that high single-photon purities and high photon-generation rates can be simultaneously achieved by removing the signals originating from the sequential two-photon emission of biexcitons created by multiple excitation pulses. We successfully demonstrate that the ultrahigh performance of the room-temperature single-photon sources showing g(2)(0) ? 10?2 can be confirmed by the ultralow-dark-count detection of the temporally purified single photons. These findings provide strong evidence for the attractiveness of CQDs as candidates for high-quality room-temperature quantum light sources.
关键词： single-photon sources,room-temperature,superconducting-nanowire single-photon detectors,quantum emitters,colloidal quantum dots,temporal filtering
更新于2025-09-11 14:15:04
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Correlation between the Morphology of ZnO Layers and the Electroluminescence of Quantum Dot Light-Emitting Diodes
摘要： The present work shows the e?ect of the ZnO layer morphology on inverted quantum dot light-emitting diodes (QLEDs) using di?erent spin-coating processes. In the inverted structure of ITO/ZnO/QDs/CBP/MoO3/Al, ZnO nanoparticles were used as the electron transport layer. The utilization of a two-step spin-coating process to deposit a ZnO layer on a patterned ITO glass substrate resulted in an increase in the surface roughness of the ZnO layer and a decrease in the luminance of the QLEDs. However, the current e?ciency of the device was enhanced by more than two-fold due to the reduced current density. Optimization of the ZnO spin-coating process can e?ciently improve the optical and electrical properties of QLEDs.
关键词： colloidal quantum dots,quantum dot light-emitting diodes,spin-coating process,ZnO
更新于2025-09-11 14:15:04
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Spray‐Coated Colloidal Perovskite Quantum Dot Films for Highly Efficient Solar Cells
摘要： A fully automated spray-coated technology with ultrathin-film purification is exploited for the commercial large-scale solution-based processing of colloidal inorganic perovskite CsPbI3 quantum dot (QD) films toward solar cells. This process is in the air outside the glove box. To further improve the performance of QD solar cells, the short-chain ligand of phenyltrimethylammonium bromide (PTABr) with a benzene group is introduced to partially substitute for the original long-chain ligands of the colloidal QD surface (namely PTABr-CsPbI3). This process not only enhances the carrier charge mobility within the QD film due to shortening length between adjacent QDs, but also passivates the halide vacancy defects of QD by Br? from PTABr. The colloidal QD solar cells show a power conversion efficiency (PCE) of 11.2% with an open voltage of 1.11 V, a short current density of 14.4 mA cm?2, and a fill factor of 0.70. Due to the hydrophobic surface chemistry of the PTABr–CsPbI3 film, the solar cell can maintain 80% of the initial PCE in ambient conditions for one month without any encapsulation. Such a low-cost and efficient spray-coating technology also offers an avenue to the film fabrication of colloidal nanocrystals for electronic devices.
关键词： CsPbI3,perovskite,colloidal quantum dots,spray coating,solar cells
更新于2025-09-11 14:15:04
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New strategies for colloidal-quantum-dot-based intermediate-band solar cells
摘要： The intermediate-band solar cell (IBSC) concept promises to increase the efficiency limit in a single-junction solar cell through the absorption of below-bandgap-energy photons. Despite their operating principle having been proposed over 20 years ago, IBSCs have not delivered on this promise yet, and the devices fabricated so far, mainly based on embedded epitaxial quantum dots, have instead operated with lower efficiency than conventional solar cells. A new paradigm, based on the exploitation as the intermediate band of the intragap states naturally occurring in the density functional theory description of colloidal (i.e., chemically synthesized) quantum dots, was suggested recently. Here, we revisit this intriguing concept unveiling its shortcomings and propose two alternative schemes: in the first, the localized electron surface trap states, ubiquitously found in commonly synthesized colloidal quantum dots, are used as intermediate bands in strongly coupled films made of small InAs nanocrystals and, in the second scheme, the intermediate band is provided by the conduction-band-minimum-derived miniband in films of larger InAs nanocrystals. Both schemes yield estimated limiting IBSC efficiencies exceeding Shockley-Queisser’s limit for a single absorber.
关键词： efficiency,InAs nanocrystals,intermediate-band solar cell,colloidal quantum dots,Shockley-Queisser limit
更新于2025-09-11 14:15:04
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Nanostructured colloidal quantum dots for efficient electroluminescence devices
摘要： The exceptional quality of light generated from colloidal quantum dots has attracted continued interest from the display and lighting industry, leading to the development of commercial quantum dot displays based on the photoluminescence down-conversion process. Beyond this technical level, quantum dots are being introduced as emissive materials in electroluminescence devices (or quantum dot-based light-emitting diodes), which boast high internal quantum efficiency of up to 100%, energy efficiency, thinness, and flexibility. In this review, we revisit various milestone studies regarding the core/shell heterostructures of colloidal quantum dots from the viewpoint of electroluminescence materials. Development of nanostructured colloidal quantum dots advanced from core/shell heterostructure, core/thick shell formulation, and delicate control of confinement potential shape has demonstrated close correlation of the photophysical properties of quantum dots with the performance of electroluminescence device, which provided useful guidelines on the heterostructured quantum dots for mitigating or eliminating efficiency limiting phenomena in quantum dot light emitting diodes. To enable practical and high performance quantum dot-based electroluminescence devices in the future, integration of design concepts on the heterostructures with environmentally benign systems will be crucial.
关键词： Electroluminescence,Nanocrystals,Colloidal Quantum Dots,Core/Shell Heterostructures,Light Emitting Diodes
更新于2025-09-11 14:15:04
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Fast Electron and Slow Hole Relaxation in InP-Based Colloidal Quantum Dots
摘要： Colloidal InP-based quantum dots are a promising material for light-emitting applications as an environment friendly alternative to their Cd-containing counterparts. Especially for their use in optoelectronic devices, it is essential to understand how charge carriers relax to the emitting state after injection with excess energy and if all of them arrive at this desired state. Herein, we report on time-resolved differential transmission measurements on colloidal InP/ZnS and InP/ZnSe core/shell quantum dots. By optically exciting and probing individual transitions, we are able to distinguish between electron and hole relaxation. This in turn allows us to determine how the initial excess energy of the charge carriers affects the relaxation processes. According to the electronic level scheme, one expects a strong phonon bottleneck for electrons, while holes should relax easier as their energy levels are more closely spaced. On the contrary, we find that electrons relax faster than holes. The fast electron relaxation occurs via an efficient Auger-like electron-hole scattering mechanism. On the other hand, a small wave function overlap between core and shell states slows the hole relaxation down. Additionally, holes can be trapped at the core/shell interface leading to either slow detrapping or nonradiative recombination. Overall, these results demonstrate that it is crucial to construct devices enabling the injection of charge carriers energetically close to their emitting states in order to maximize the radiative efficiency of the system.
关键词： InP,differential transmission spectroscopy,phonon bottleneck,charge carrier relaxation,trap states,electron-hole scattering,colloidal quantum dots
更新于2025-09-11 14:15:04
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Manipulation of Phase-Transfer Ligand-Exchange Dynamics of PbS Quantum Dots for Efficient Infrared Photovoltaics
摘要： Chemical surface treatment of colloidal quantum dots (CQDs) by phase-transfer ligand exchange (PTLE) is essential to implement highly densified, well-passivated CQD films for optoelectronic applications, such as infrared photovoltaics, light-emitting diodes and photodetectors. The PTLE, however, involves parallel and interactional processes of ligand exchange, phase transfer, and surface passivation of CQDs, which renders the optimization of PTLE still challenging. Herein, we explored the action mechanism of a widely-used additive, ammonium acetate (AA), on the PTLE of PbS CQDs in order to recognize the dynamic balance during the PTLE process and its impact on the performance of colloidal quantum dot solar cells (CQDSCs). Our research definitely shows that AA additive can modify the dynamics of PTLE by participating in all the three processes, and the amount of AA significantly influences the defect passivation and colloidal stability of PbS CQDs. At an appropriate concentration (~50 mM) of AA, PbS CQDs are well iodide-passivated by the PTLE, and the fabricated CQDSCs achieve the PCE of ~10% associated with the improved carrier transport and the reduced trap-assisted carrier recombination. However, excessive AA causes the trace residual AA on the CQD surface, resulting in the insufficient surface passivation of PbS CQDs and trap issues of CQDSCs. The double-edged sword effect of AA additive on the PTLE, demonstrated in our work, suggests that realizing the dynamic balance of different processes during PTLE is crucial for the further performance promotion of CQDSCs.
关键词： infrared photovoltaics,ammonium acetate,phase-transfer ligand exchange,colloidal quantum dots,surface passivation
更新于2025-09-11 14:15:04
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Efficient hybrid colloidal quantum dot/organic solar cells mediated by near-infrared sensitizing small molecules
摘要： Solution-processed semiconductors are promising materials to realize optoelectronic devices that combine high performance with inexpensive manufacturing. In particular, the exploitation of colloidal quantum dots (CQDs) capable of harvesting infrared photons, in conjunction with visible-absorbing organic chromophores, has been demonstrated as an interesting route. Unfortunately, CQD/organic hybrid photovoltaics have been limited to power conversion efficiencies (PCEs) below 10% due to chemical mismatch and difficulties in facilitating charge collection. Here we devise a hybrid architecture that overcomes these limitations by introducing small molecules into the CQD/organic stacked structure. The small molecule complements CQD absorption and creates an exciton cascade with the host polymer, thus enabling efficient energy transfer and also promoting exciton dissociation at heterointerfaces. The resulting hybrid solar cells exhibit PCEs of 13.1% and retain over 80% of their initial PCE after 150?h of continuous operation unencapsulated, outperforming present air-processed solution-cast CQD/organic photovoltaics.
关键词： hybrid photovoltaics,organic solar cells,small molecules,power conversion efficiency,colloidal quantum dots
更新于2025-09-11 14:15:04
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[IEEE 2018 Asia Communications and Photonics Conference (ACP) - Hangzhou (2018.10.26-2018.10.29)] 2018 Asia Communications and Photonics Conference (ACP) - All-optical Phase Shifter and Switch Based on Microfiber Coated with Colloidal Quantum Dots
摘要： We propose an all-optical phase shifter and switch based on a microfiber coated with colloidal quantum dots, phase shift up to 5.95π is achieved, and the pump-controlled optical switch has an extinction ratio of 13dB.
关键词： optical switch,optical phase shifter,colloidal quantum dots
更新于2025-09-11 14:15:04
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Real colloidal quantum dot structures revealed by high resolution analytical electron microscopy
摘要： The development of bright and photostable colloidal quantum dots has been a truly interdisciplinary feat. Designing a specific composition of core and shell materials and then producing the desired nanoarchitecture through chemical routes require a blend of physical and inorganic chemistry, solid-state physics, and materials science. In a battle to separate charge carriers from a surface wrought with defect states, complex shell structures with precisely specified gradient compositions have been engineered, producing nanosized emitters with exceptional stability and color purity. However, much of the success has resided in II-VI materials, such as CdSe, and progress is only just being made on cadmium-free quantum dots. This perspective will discuss the primary challenges in engineering colloidal quantum dots and highlight how the advent of advanced analytical electron microscopy is revealing the structure-function relationships of these complex systems.
关键词： photostability,nanocrystals,CdSe,colloidal quantum dots,electron microscopy
更新于2025-09-11 14:15:04