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Influence of Al/Cu thickness ratio and deposition sequence on photoelectric property of ZnO/Al/Cu/ZnO multilayer film on PET substrate prepared by RF magnetron sputtering
摘要： ZnO/Al/Cu/ZnO multilayer films were deposited on flexible polyethylene terephthalate (PET) substrates by radio frequency (RF) magnetron sputtering. The overall thickness of the intermediate Al and Cu metal layers maintained at 8 nm. The four different Al/Cu thickness ratios were 7:1, 6:2, 5:3 and 4:4. Other four reference samples were prepared by using the same process, i.e. ZnO single-layer film, ZnO/Al8 (8-nm-thick Al layer, the same below)/ZnO, ZnO/Cu8/ZnO and ZnO/Cu2/Al6/ZnO multilayer films. The effects of Al/Cu thickness ratio and deposition sequence of Al and Cu layers were investigated. The results revealed that with the increase of Cu layer thickness, sheet resistance of the multilayer film decreased, while transmittance increased first and then decreased. The ZnO/Al6/Cu2/ZnO multilayer film with a sheet resistance of 108 Ω/sq and an average visible transmittance of 84.73% had the optimum overall photoelectric property, being confirmed by the highest figure of merit of 1.77 × 10–3 Ω–1. Furthermore, ZnO/Cu2/Al6/ZnO and ZnO/Al6/Cu2/ZnO multilayer films exhibited almost the same average visible transmittance and sheet resistance, implying that the deposition sequence of Al and Cu layers has little influence on photoelectric properties. It is demonstrated that ZnO/Al/Cu/ZnO multilayer flexible films have great potential in various fields.
关键词： ZnO,Cu,Magnetron sputtering,Multilayer,Al,Photoelectric property
更新于2025-09-09 09:28:46
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An Inverted Magnetron Operating in HiPIMS Mode
摘要： An ionized physical vapor deposition technique for thin ferromagnetic films is proposed. The technique is based on high power impulse magnetron sputtering (HiPIMS) with positive discharge polarity. A gapped-target was employed as the cathode of the magnetron. By applying positive HiPIMS pulses to the anode, sputtered particles inside the magnetron source were ionized and extracted through the gap. Using a discharge current with a peak of about 13 A, an ion flux in the order of 1021 m?2s?1 was obtained at a distance of 45 mm from the magnetron. In addition, deposition rates of up to 1.1 ?/s for nickel films were achieved using a 30 Hz repetition rate and 300 μs pulse width.
关键词： ferromagnetic,ionized physical vapor deposition,HiPIMS,magnetron sputtering,thin films
更新于2025-09-09 09:28:46
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Preparation of Amorphous Coatings of AlFeCoNiCuZrV Alloy by Direct Current Magnetron Sputtering Method
摘要： The amorphous coatings of AlFeCoNiCuZrV high entropy alloy were deposited by direct current magnetron sputtering (DCMS) in the mixed atmosphere of Ar and O2. A smooth amorphous coating was obtained. The microstructure and properties of the coatings were investigated. The results showed that the chemical composition, microstructure and mechanical properties of the amorphous coatings intimately relied on the concentration of O2 in the mixture atmosphere. When O2 flow ratio increased, the thickness and roughness of the coatings decreased. The maximum values of the hardness and the elastic modulus of the coating are 12 and 168 Gpa, respectively.
关键词： Properties,Amorphous coating,Magnetron sputtering,High entropy alloy
更新于2025-09-09 09:28:46
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Double active layer InZnO:N/InZnSnO thin film transistors with high mobility at low annealing temperature
摘要： In this paper, bottom-gate top-contact thin film transistors (TFTs) with a double active layer of InZnO:N/InZnSnO (IZO:N/IZTO) were successfully prepared. The IZO:N/IZTO thin films were deposited on SiO2/p-Si substrates by radio frequency (RF) magnetron sputtering at room temperature. The transmittance of both the IZO:N thin film and the IZTO thin film were more than 80% in the range of visible light. The IZO:N thin film and the IZTO thin film were found to be amorphous at the annealing temperature of 325?°C by means of X-ray diffraction (XRD). The double active layer IZO:N/IZTO TFT exhibited good electrical performance with a saturation mobility of 41.5?cm2?V?1?s?1, an on/off current ratio of 2.88 × 105, and a threshold voltage of 1.0?V, which achieved high mobility at the low annealing temperature of 325?°C.
关键词： low annealing temperature,RF magnetron sputtering,high mobility,InZnO:N/InZnSnO,thin film transistors
更新于2025-09-09 09:28:46
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Investigation of the Optoelectronic Properties of Ti-doped Indium Tin Oxide Thin Film
摘要： In this study, direct-current magnetron sputtering was used to fabricate Ti-doped indium tin oxide (ITO) thin films. The sputtering power during the 350-nm-thick thin-film production process was fixed at 100 W with substrate temperatures increasing from room temperature to 500 °C. The Ti-doped ITO thin films exhibited superior thin-film resistivity (1.5 × 10?4 ?/cm), carrier concentration (4.1 × 1021 cm?3), carrier mobility (10 cm2/Vs), and mean visible-light transmittance (90%) at wavelengths of 400–800 nm at a deposition temperature of 400 °C. The superior carrier concentration of the Ti-doped ITO alloys (>1021 cm?3) with a high figure of merit (81.1 × 10?3 ??1) demonstrate the pronounced contribution of Ti doping, indicating their high suitability for application in optoelectronic devices.
关键词： indium tin oxide (ITO),transparent conducting oxide (TCO),magnetron sputtering,oxide-related compound
更新于2025-09-09 09:28:46
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Effects of post-deposition plasma treatments on stability of amorphous InGaZnO <i> <sub/>x</sub></i> thin-film transistors prepared with plasma-assisted reactive magnetron sputtering
摘要： Effects of post-deposition plasma treatments on the stability of amorphous InGaZnOx thin-film transistors (TFTs) prepared with plasma-assisted reactive magnetron sputtering were investigated. The temporal evolution in the electrical characteristics of as-deposited IGZO TFT and post plasma treated IGZO TFT that passed over 400 d after fabrication and were kept under 40% humidity at room temperature were measured, resulting in which no change in the electrical characteristics of post plasma treated IGZO TFT with mobility of 40 cm2 V?1 s?1 were observed. Positive-current-bias instability in post plasma treated IGZO TFTs was examined together with as-deposited IGZO TFTs. The results indicated that the stabilities of electrical characteristics caused by the positive bias stress is primarily attributed to defects in the bulk a-IGZO region for as-deposited IGZO TFTs. The stabilities of electrical characteristics in post plasma treated IGZO TFTs were considerably improved compared to that of as-deposited IGZO TFTs. From these results, it was shown that the post plasma treatment is considered to be effective for improving the stability of IGZO TFTs as well as conventional thermal annealing.
关键词： post-deposition plasma treatments,stability,plasma-assisted reactive magnetron sputtering,amorphous InGaZnOx,thin-film transistors
更新于2025-09-09 09:28:46
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Effect of defects and secondary phases in Cu2ZnSnS4 absorber material on the performance of Zn(O,S) buffered devices
摘要： Copper zinc tin sulfide (CZTS) absorber layer attracts so much attention in photovoltaic industry since it contains earth abundant, low cost and non-toxic elements contrary to other chalcogenide based solar cells. In the present work, CZTS absorber layers were prepared following a two-stage process: firstly, a stack of metal precursors (Copper (Cu) / Tin (Sn) / Zinc (Zn) / Copper (Cu)) were deposited on molybdenum (Mo) substrate by magnetron sputtering, then this stack was annealed under S atmosphere inside a tubular furnace. CZTS thin films were investigated using energy dispersive X-ray spectroscopy, X-ray diffraction, scanning electron microscopy and Raman spectroscopy. The effect of sulfurization time and the thickness of top and bottom Cu layer in precursors on the properties of CZTS thin films were investigated. The importance of Cu thickness adjacent to Sn to avoid detrimental phases was addressed. The significance of sulfurization time to restrict the Sn and Zn losses, formation of oxides such as tin dioxide and zinc oxide, and formation of molybdenum disulfide and voids between Mo/CZTS interface was also addressed. Moreover, cadmium sulfide buffer layer, which is conventionally used in CZTS solar cells, is replaced by an environmentally friendly alternative zinc oxysulfide buffer layer.
关键词： Magnetron sputtering,Zinc oxysulfide,Copper zinc tin sulfide,buffer layer,absorber layer
更新于2025-09-09 09:28:46
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Comparative study on structure and properties of ZnO thin films prepared by RF magnetron sputtering using pure metallic Zn target and ZnO ceramic target
摘要： In this work, ZnO thin films was deposited onto Si substrate by ablation of different sputtering targets (ZnO ceramic target and pure metallic Zn target) under different substrate temperatures from 300°C to 600°C with intervals of 100°C, and the properties of ZnO thin films were analysed. The results showed that ZnO thin films had the c-axis preferred orientation and it also presented optimised properties owing to the reduction of thin film defects at a substrate temperature of 400°C. By analysing data, it could also be seen that the performance of ZnO thin films fabricated using the ZnO ceramic target was better than that of ZnO thin films fabricated using the pure metallic Zn target. It was considered that the excellent properties of ZnO thin films fabricated using the ZnO ceramic target were attributed to the decrease in oxygen vacancies and the reduction of film defects.
关键词： ZnO ceramic target,RF magnetron sputtering,pure metallic Zn target,ZnO,thin films
更新于2025-09-09 09:28:46
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[IEEE 2018 Iranian Conference on Electrical Engineering (ICEE) - Mashhad (2018.5.8-2018.5.10)] Electrical Engineering (ICEE), Iranian Conference on - Fabrication of P-Type Microcrystalline Silicon Thin Film by Magnetron Sputtering and Copper Induced Crystallization
摘要： P-type micro-crystalline Silicon thin film was realized by magnetron sputtering and copper-induced crystallization for photovoltaic applications. Firstly, amorphous Silicon film was deposited by direct current magnetron sputtering from highly-doped single crystalline Si target. Then it was crystallized by copper-induced crystallization in nitrogen atmosphere with the annealing temperatures ranges from 450 to 950 °C. The micro-crystalline Silicon thin film was characterized by X-ray diffraction and Ramon spectrometry. Its grain size and crystallization ratio were approximately 20 nm and 93%, respectively. Finally, a PN junction solar cell was fabricated by creating the P-type microcrystalline Si thin film (as the P region) on a highly-doped N-type Silicon wafer (as N region). The fabricated device showed the good rectification characteristics of a typical diode where under dark condition it represented the rectification ratio of 150 and reverse saturation current density of 9 μA.cm-2. The fabricated solar cell showed a significant photovoltaic effect under AM 1.5G illumination conditions. The highest photovoltaic conversion efficiency of 2.1%, with the open-circuit voltage of 416 mV and short-circuit current density of 13.3 mA/cm2, was measured from the sample fabricated by the optimal process.
关键词： magnetron sputtering,microcrystalline silicon thin film,copper induced crystallization,characterization
更新于2025-09-09 09:28:46
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Effect of the Active Channel Thickness Variation in Amorphous In–Zn–Sn–O Thin Film Transistor
摘要： Ternary oxide thin films in the In2O3–ZnO–SnO2 system were studied for potential applications in oxide semiconductor thin film transistors (TFTs). An amorphous In–Zn–Sn–O (a-IZTO) active channel layer was deposited by RF magnetron sputtering at room temperature on an n++ Si substrate. Films from a sintered ceramic target with a nominal chemical composition of In:Zn:Sn = 40:50:10 at.% were prepared with thicknesses ranging from 15 nm to 150 nm, which was followed by annealing at 350 °C for 30 minutes in air. Subsequently, a bilayer Cu/Ti metal contact was deposited as the source/drain electrodes on the top surface through a shadow mask using an e-beam evaporator. The thickness of the active channel layer greatly influenced the characteristics of the oxide thin film transistors. The best transistor characteristics were observed from the test device with a channel thickness of 30 nm and a high on/off current ratio of approximately 108, high field effect mobility of 25 cm2/Vs, low threshold voltage of ?0.1 V, and very small subthreshold swing of 0.14 V/dec.
关键词： Thin Film Transistor,In–Zn–Sn–O,Amorphous Oxide,RF Magnetron Sputtering,IZTO,Channel Thickness
更新于2025-09-09 09:28:46